Understanding the correlation between energy-state mismatching and open-circuit voltage loss in bulk heterojunction solar cells

Photoinduced intermolecular charge transfer(PICT)determines the voltage loss in bulk heterojunction(BHJ)organic photovoltaics(OPVs),and this voltage loss can be minimized by inducing efficient PICT,which requires energy-state matching between the donor and acceptor at the BHJ interfaces.Thus,both geometrically and energetically accessible delocalized state matching at the hot energy level is crucial for achieving efficient PICT.In this study,an effective method for quantifying the hot state matching of OPVs was developed.The degree of energy-state matching between the electron donor and acceptor at BHJ interfaces was quantified using a mismatching factor(MF)calculated from the modified optical density of the BHJ.Furthermore,the correlation between the open-circuit voltage(Voc)of the OPV device and energy-state matching at the BHJ interface was investigated using the calculated MF.The OPVs with small absolute MF values exhibited high Voc values.This result clearly indicates that the energy-state matching between the donor and acceptor is crucial for achieving a high Voc in OPVs.Because the MF indicates the degree of energy-state matching,which is a critical factor for suppressing energy loss,it can be used to estimate the Voc loss in OPVs.

A Comparative Study on Open Circuit Voltage Models for Lithium-ion Batteries

The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little attention has been paid to the accuracy of various open circuit voltage(OCV) models for correcting the SoC with aid of the ampere-hour counting method. This paper presents a comprehensive comparison study on eighteen OCV models which cover the majority of models used in literature. The low-current OCV tests are conducted on the typical commercial LiFePO/graphite(LFP) and LiNiMnCoO/graphite(NMC) cells to obtain the experimental OCV-SoC curves at different ambient temperature and aging stages. With selected OCV and SoC points from experimental OCV-SoC curves, the parameters of each OCV model are determined by curve fitting toolbox of MATLAB 2013. Then the fitting OCV-SoC curves based on diversified OCV models are also obtained. The indicator of root-mean-square error(RMSE) between the experimental data and fitted data is selected to evaluate the adaptabilities of these OCV models for their main features, advantages,and limitations. The sensitivities of OCV models to ambient temperatures, aging stages, numbers of data points,and SoC regions are studied for both NMC and LFP cells. Furthermore, the influences of these models on SoC estimation are discussed. Through a comprehensive comparison and analysis on OCV models, some recommendations in selecting OCV models for both NMC and LFP cells are given.

Effect of Valence Band Tail Width on the Open Circuit Voltage of P3HT:PCBM Bulk Heterojunction Solar Cell:AMPS-1D Simulation Study

The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.

An analytical model to explore open-circuit voltage of a-Si:H/c-Si heterojunction solar cells

The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.

Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

Perovskite Self-Passivation with PCBM for Small Open-Circuit Voltage Loss

It is well known that [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) is a common n-type passivation material in PSCs, usually used as an interface modification layer. However, PCBM is extremely expensive and is not suitable for future industrialization. Herein, the various concentrations of PCBM as an additive are adopted for PSCs. It not only avoids the routine process of spin coating the multi-layer films, but also reduces the PCBM material and cost. Meanwhile, PCBM can passivate the grain surface and modulate morphology of perovskite films. Furthermore, the most important optical parameters of solar cells, the current density (Jsc), fill factor (FF), open-circuit voltage (Voc) and power conversion efficiencies (PCE) were improved. Especially, when the PCBM doping ratio in CH3NH3PbI3 (MAPbI3) precursor solution was 1 wt%, the device obtained the smallest Voc decay (less than 1%) in the p-i-n type PSCs with poly (3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) as hole transport layer (HTL) and fullerene (C60) as electron transport layer (ETL). The PSCs Voc stability improvement is attributed to enhanced crystallinity of photoactive layer and decreased non-radiative recombination by PCBM doping in the perovskites.

Experimental Measurement of Minority Carriers Effective Lifetime in Silicon Solar Cell Using Open Circuit Voltage Decay under Magnetic Field in Transient Mode

This manuscript presents a simple method for excess minority carriers’ lifetime measurement within the base region of p-n junction polycrystalline solar cell in transient mode. This work is an experimental transient 3-Dimensionnal study. The magnitude of the magnetic field B is varied from 0 mT to 0.045 mT. Indeed, the solar cell is illuminated by a stroboscopic flash with air mass 1.5 and under magnetic field in transient state. The experimental details are assumed in a figure. The procedure is outlined by the Open Circuit Voltage Decay analysis. Effective minority carrier life-time is calculated by fitting the linear zone of the transient voltage decay curve because linear decay is an ideal decay. The kaleidagraph software permits access to the slope of the curve which is inversely proportional to the lifetime. The external magnetic effects on minority carriers’ effective lifetime is then presented and analyzed. The analysis shows that the charge carrier’s effective lifetime decrease with the magnetic field increase.

Improvement of Open-Circuit Voltage in Organic Photovoltaic Cells with Chemically Modified Indium-Tin Oxide

The possibility of the increase in open-circuit voltage of organic photovoltaic cells based primarily indium-tin oxide (ITO)/rubrene/fullerene/Al structure by changing the work function of ITO anodes and Al cathodes was described in this work. To change built-in potential preferably in order to increase the open-circuit voltage, the work function of ITO should be increased and work function of Al should be decreased. The correlation between the change in work functions of electrodes and performance of the organic photovoltaic cells before and after surface modifications was examined in detail. The enhancement of open-circuit voltage depends on a function of work function change of both ITO and Al electrode. We could show that the built-in potential in the cells played an important role in open-circuit voltage.

充电桩充电模块功率器件故障诊断研究综述

大功率直流充电桩是未来电动汽车充电设施的发展方向,充电模块是直流充电桩最重要以及故障率最高的部件,其中功率器件开路故障较为常见。为保证充电模块安全可靠运行,需要对充电模块功率器件开路故障进行准确识别和定位。文中首先对充电模块拓扑结构和故障类型进行分析,然后分别对基于解析模型、基于信号处理和基于知识的功率器件开路故障诊断方法进行总结,分别介绍了各类方法的基本思想、研究进展和优缺点,最后总结并展望充电模块功率器件开路故障诊断方法未来的研究和发展方向。

无刷励磁机旋转整流器二极管开路故障的轴电压特征研究

内转子式三相无刷励磁机旋转整流器二极管单管开路故障发生频率较高且不易直接监测,可能诱发多个二极管故障的连锁效应,严重影响发电机组的安全可靠运行,根据故障在轴电压中形成的特征谐波进行在线监测是一种新型检测方法。首先分析了旋转整流器二极管单管开路故障时励磁机电枢磁动势特征,利用气隙磁导法得到交链电枢转轴交变磁通表达式,进而预测二极管开路故障后,励磁机轴电压中将出现Pωr/2π整数倍频率的谐波。最后以一台5.8 MW的三相无刷励磁机为例进行有限元仿真,结果与理论预期相符,证明了轴电压信号可用于内转子式无刷励磁机的旋转整流桥二极管开路故障在线监测。

基于短时傅里叶变换和深度网络的模块化多电平换流器子模块IGBT开路故障诊断

针对现有模块化多电平换流器(MMC)子模块故障诊断过程中所需传感器较多、测量干扰较大等问题,提出一种基于深度学习的MMC子模块IGBT开路故障诊断方法。在对MMC子模块开路故障特征进行分析的基础上,利用短时傅里叶变换(STFT)提取桥臂电压信号的谐波分量信息作为故障诊断所需的特征参数。将所得到的特征参数进行处理后构建故障诊断样本,在通过深度置信网络实现故障类型快速检测的基础上,依据不同故障类型,构建多个基于卷积神经网络的故障定位网络,进而实现开路故障的检测与定位。通过129电平的MMC系统仿真模型和降功率的MMC实验系统搭建,对该文所提方法进行了验证。仿真和实验结果表明,所提故障诊断方法可以在减少传感器数量的基础上实现子模块开路故障的诊断,提高系统的可靠性。

单相脉冲整流器故障在线智能诊断实验设计

针对高速列车电力牵引系统中单相脉冲整流器的功率器件开路故障和传感器故障,设计了基于数据驱动的故障在线智能诊断实验。首先,对单相脉冲整流器系统进行数学建模,分析功率器件开路故障的故障拓扑和传感器故障的故障机理;然后,基于极限学习机算法和非线性自回归结构设计智能诊断模型,并将故障在线智能诊断实验分为离线训练和在线验证2个阶段;最后,基于RT Box半实物仿真器搭建快速原型控制实验平台,对故障模型和诊断模型进行实验验证。实验结果表明,构建的单相脉冲整流器故障在线智能诊断模型可以在1/4个基波周期内检测到故障的发生,并在3/4个基波周期内识别出具体故障类型。

锂离子电池自放电K值检测系统设计

锂离子电池自放电检测对评估单体锂离子电池或电池组的容量、循环特性和使用寿命具有重要作用。快速检测开路状态下锂离子电池存储电量自发消耗是目前该领域的研究热点。采用开路电压法,通过测量单位时间内锂离子电池的电压降,即自放电K值,表征其自放电程度,设计了锂离子电池自放电K值检测系统。该系统由上、下位机组成,两者之间采用Type-C方式连接,可对锂离子电池进行自放电率检测。以三元锂离子电池为测试对象,对其进行14 d的静置实验,检测静置过程中的自放电K值。测试结果表明该系统不仅缩短了锂离子电池自放电检测时间,而且可准确检测锂离子电池的自放电率。在锂离子电池20%、40%、60%、80%、100%5种荷电状态,20、50、-20、-40℃4种温度条件下对锂离子电池进行自放电K值检测。依据K值测试结果,可分析荷电状态和自放电环境温度对锂离子电池自放电率的影响。

基于自然容错开关表的五相永磁同步电机直接转矩控制

五相永磁同步电机(permanent-magnetsynchronous motor,PMSM)传统直接转矩控制(direct torque control,DTC)存在相电流畸变严重、共模电压(common-modevoltage,CMV)高、转矩和磁链脉动大等问题,且无法实现相开路故障情况下的无扰运行。为解决上述问题,提出一种基于自然容错开关表的DTC策略。该策略根据PMSM开路故障前后基电压矢量的特点以及三次平面合成电压矢量为零的原则,构建虚拟矢量(virtual vector,VV),设计故障前后同一套自然容错开关表,进而不但抑制了故障导致的转矩脉动,而且在故障前后均能降低三次谐波电流、减小转矩和磁链脉动、抑制CMV。实验结果验证所提策略的可行性。

基于开口变压器法的交流电机定子非激励相绕组匝间短路检测研究

为了解决交流电机定子绕组中线圈绝缘损伤引起匝间短路故障无法准确、快速定位的问题,提出将检测转子绕组匝间短路的开口变压器法移植到检测交流电机定子绕组匝间短路,定子单相添加激励源,非激励相绕组设置故障点,开口变压器检测故障点所在槽,分析故障前后开口变压器绕组感应电动势的变化。首先阐述开口变压器检测定子非激励相的工作原理,分析正常和故障状态下通过开口变压器铁心漏磁通的表达式,进一步得到开口变压器绕组感应电动势表达式,获取故障变化规律。随后建立交流电机电磁仿真模型,进行仿真分析,最后用一台定子样机进行实验验证。结果表明:故障状态下,随着故障程度的加深,故障点所在槽的开口变压器感应电动势随之减小,证明了开口变压器可以作为离线检测交流电机定子非激励相绕组匝间短路故障的有效手段。

改进残差网络的逆变器开路电路故障诊断

针对传统三相电压源逆变器开路故障诊断方法存在准确率低和鲁棒性差的问题,提出一种用于故障诊断的改进二维卷积神经网络优化方法.该方法首先引入一种新的数据预处理方式,通过马尔可夫变迁场(MTF)将原始时域电压信号数据转换成二维灰度图像,有效保留特征的时空关系;其次,提出采用并行注意力机制对卷积神经网络ResNet18特征提取层提取的特征分别进行通道和空间特征筛选,并完成有效特征融合;最后,融合的特征经ResNet18全连接层和输出层得到故障分类结果.实验结果表明,所提出的改进故障诊断方法能将诊断精度提升至99.80%;在不同噪声条件下均能保持90%以上的分类准确性,验证该方法可有效提高逆变器开路故障诊断性能和鲁棒性.

基于电容分布效应的一二次融合柱上断路器断口绝缘性能分析与优化研究

针对现有一二次融合柱上断路器负载侧或电源侧单侧配置电子式电压传感器(electronic voltage transformer,EVT)后断口工频电压试验时,壳体对地电位过高造成柱上断路器破坏性放电的问题,文中对配置EVT的柱上断路器断口绝缘性能进行研究。文中首先对柱上断路器断口耐压试验时壳体对地放电问题进行了电容分布理论分析,并给出配置不同容值制作的EVT的柱上断路器在断口耐压试验时壳体与地之间的电压值。其次给出了现有国网标准化方案一二次融合柱上断路器的理论设计依据,同时指出电源侧配置EVT的一二次融合柱上断路器的绝缘设计裕度,得出在满足开关性能及EVT准确度要求的前提下,EVT高压臂尽量采用电容容值低的电容降低壳体对地电压。最后提出在现有试验方式下一种负载侧和电源侧均配置EVT的一二次融合型柱上断路器新型结构形式,并给出试验结果。分析及试验结果证明,该结构的柱上断路器断口耐压试验时,壳体对地电压小于GB/T 11022—2020规定的相对地电压42 kV,避免了断口耐压试验时壳体与地击穿的现象,并已在工程中得到广泛的应用。

基于输出电压轨迹的三相逆变器开关管开路故障诊断

开关管开路故障会让功率变换器的输出电压与电流产生严重畸变,因而降低了变换器输出的电能质量。开路故障出现后其余功率开关器件的损耗可能增加,所以容易在电路中引发二次故障。文中提出一种针对三相逆变器开关管开路故障的故障诊断方法。故障类型与故障器件的辨识通过分析三相逆变器在αβ平面上的输出电压轨迹实现,仅需要测量滤波后的输出线电压。所提出的方法易于实现,可以诊断三相逆变器的所有开关管开路故障情况。最后,通过仿真和实验验证所提出方法的可行性和准确性。