The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and Electronic Devices

Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

2D noncarbon materials-based nonlinear optical devices for ultrafast photonics [Invited]

Ultrafast lasers play an important role in a variety of applications ranging from optical communications to medical diagnostics and industrial materials processing. Graphene and other two-dimensional（2D） noncarbon materials, including topological insulators（TIs）, transition metal dichalcogenides（TMDCs）, phosphorene, bismuthene, and antimonene, have witnessed a very fast development of both fundamental and practical aspects in ultrafast photonics since 2009. Their unique nonlinear optical properties enable them to be used as excellent saturable absorbers（SAs） that have fast responses and broadband operation, and can be easily integrated into lasers. Here, we catalog and review recent progress in the exploitation of these 2D noncarbon materials in this emerging field. The fabrication techniques, nonlinear optical properties, and device integration strategies of 2D noncarbon materials are first introduced with a comprehensive view. Then, various mode-locked/Q-switched lasers（e.g., fiber, solid-state, disk, and waveguide lasers） based on 2D noncarbon materials are reviewed. In addition, versatile soliton pulses generated from the mode-locked fiber lasers based on 2D noncarbon materials are also summarized. Finally, future challenges and perspectives of 2D materials-based lasers are addressed.

Broadband illusion optical devices based on conformal mappings

In this paper, we propose a simple method of illusion optics based on conformal mappings. By carefully developing designs with specific conformal mappings, one can make an object look like another with a significantly different shape. In addition, the illusion optical devices can work in a broadband of frequencies.

New functions of VCSEL-based optical devices Invited Paper

We have seen a lot of unique features off vertical cavity surface emitting lasers （VCSELs）, such as low power consumption, wafer-level testing, small packaging capability, and so on. The market of VCSELs has been growing up rapidly in recent years and they are now the key devices in local area networks using multi-mode optical fibers. In addition, new functions on VCSELs have been demonstrated. In this paper, the recent advances of VCSEL photonics will be reviewed which include the wavelength engineering and the athermal operation based on microelectro mechanical system （MEMS） technologies. Also, this paper explores the potential and challenges for new functions of VCSELs, including high-speed control of optical phase, slow light devices, plasmonic VCSELs, and so on.

Fabrication of Micro -Optical Devices by a Femtosecond Laser

Femtosecond laser is a perfect laser source for materials processing when high accuracy and small structure size are required. Due to the ultra short interaction time and the high peak power, the process is generally characterized by the absence of heat diffusion and, consequently molten layers. Various induced structures have been observed in materials after the femtosecond laser irradiation. Here, we report on fabrication of micro-optical devices by the femtosecond laser. 1) formation of optical waveg...

Optical devices based on multilayer optical waveguide

Optical waveguide is used to guide the transmission of light. This paper reviews multilayer optical waveguide and some devices based on it. The optical waveguide can be divided into single-layer and multilayer optical waveguides in general. Here, multilayer cylindrical waveguide and multilayer planar waveguides were mainly focused. The analyzing method and the structures of waveguides were also demonstrated in briefly. Both these multilayer optical waveguide used in different kinds of optical devices including optical modulator, laser, optical amplifier, optical switch and special fiber were further presented. At last, the principle and structure of these multilayer optical devices were compared.

Simulation of Optical Devices Using Parallel FDTD Method

On this paper, we investigate the algorithm and efficiency of simulation of optical devices using parallel computing method, implement some real wavelength division multiplexing (WDM) components such as resonators to test the method's possibility and efficiency.

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Gallium nitride(GaN)/porous silicon(PSi)film was prepared using a pulsed laser deposition method and 1064 nm Nd:YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals.X-ray diffraction,room-temperature photoluminescence,atomic force microscopy and field emission scanning electron microscopy images,and electrical characteristics in the prepared GaN on the Psi film were investigated.The optimum Psi substrate was obtained under the following conditions:10 min,10 mA/cm^(2),and 24%hydrofluoric acid.The substrate exhibited two highly cubic crystalline structures at(200)and(400)orientations and yellow visible band photoluminescence,and homogeneous pores formed over the entire surface.The pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and morphologically.The GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the(002)plane.Spectroscopic properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band(374 nm)related to GaN material and in the near-infrared band(730 nm)related to the Psi substrate.The topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 nm.The GaN/Psi surface showed a cauliflower-like morphology,and the built-in voltage decreased from 3.4 to 2.7 eV after deposition.The fabricated GaN/Psi film exhibited good electrical characteristics.

Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO3/Au Heterostructures with Strong Absorption Resonance

Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consump- tion is a significant issue for information technology. Here we design an ＇electrically written and optically read＇ information storage device employing BiFeO3/A u heterostruetures with strong absorption resonance. The electro- optic effect is the basis for the device design, which arises from the strong absorption resonance in BiFeO3/Au heterostructures and the electrically tunable significant birefringence of the BiFeO3 film. We first construct a sim- ulation calculation of the BiFeO3/Au structure spectrum and identify absorption resonance and electro-optical modulation characteristics. Following a micro scale partition, the surface reflected light intensity of different polarization units is calculated. The results depend on electric polarization states of the BiFeO3 film, thus BiFeO3/Au heterostructures can essentially be designed as a type of electrically written and optically read infor- mation storage device by utilizing the scanning near-field optical microscopy technology based on the conductive silicon cantilever tip with nanofabricated aperture. This work will shed light on information storage technology.

Optofluidics:the interaction between light and flowing liquids in integrated devices

Optofluidics is a rising technology that combines microfluidics and optics.Its goal is to manipulate light and flowing liquids on the micro/nanoscale and exploiting their interaction in optofluidic chips.The fluid flow in the on-chip devices is reconfigurable,non-uniform and usually transports substances being analyzed,offering a new idea in the accurate manipulation of lights and biochemical samples.In this paper,we summarized the light modulation in heterogeneous media by unique fluid dynamic properties such as molecular diffusion,heat conduction,centrifugation effect,light-matter interaction and others.By understanding the novel phenomena due to the interaction of light and flowing liquids,quantities of tunable and reconfigurable optofluidic devices such as waveguides,lenses,and lasers are introduced.Those novel applications bring us firm conviction that optofluidics would provide better solutions to high-efficient and high-quality lab-on-chip systems in terms of biochemical analysis and environment monitoring.

Design of broadband achromatic metasurface device based on phase-change material Ge_(2)Sb_(2)Te_(5)

Based on the phase-change material Ge_(2)Sb_(2)Te_(5)(GST),achromatic metasurface optical device in the longer-infrared wavelength is designed.With the combination of the linear phase gradient GST nanopillar and the adjustment of the crystalline fraction m value of GST,the polarization insensitive achromic metalenses and beam deflector metasurface within the longer-infrared wavelength 9.5μm to 13μm are realized.The design results show that the achromatic metalenses can be focused on the same focal plane within the working waveband.The simulation calculation results show that the fullwidth at half-maximum(FWHM)of the focusing spot reaches the diffraction limit at each wavelength.In addition,the same method is also used to design a broadband achromatic beam deflector metasurface with the same deflection angle of 19°.The method proposed in this article not only provides new ideas for the design of achromatic metasurfaces,but also provides new possibilities for the integration of optical imaging,optical coding and other related optical systems.

Pulse Laser Deposition of HfO_(2)Nanoporous-Like Structure,Physical Properties for Device Fabrication

The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).

ADDITIVE-INDUCED ENHANCEMENT OF OPTICAL CLARITY OF POLYACRYLAMIDE HYDROGEL

The aqueous polymerization of acrylamide and crosslinking with N,N-methylenebisacrylamide afforded hydrogelsdisplaying high levels of light scattering (poor optical clarity). Enhancement of the optical clarity within a polyacrylamide(PAm) hydrogel was accomplished through the implementation of 'refractive index matching'. Water-soluble additives wereutilised to better match the refractive index inhomogeneities throughout a given hydrogel. This resulted in lower lightscattering within the system and hence improved clarity. Amino acids, sugars, polymers, and other water-soluble additivessuch as glycerol were investigated by this methodology. Most additives investigaed displayed potential for effectivelyreducing the light scattering within a PAm hydrogel as a function of increased additive concentration. On increasing therefractive index of the water medium, the overall refractive index of a PAm hydrogel was also observed to increase. Thisprovided a quantitative means of determining the effectiveness of a given additive for improving the optical clarity within ahydrogel.

A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^＋ and n^＋ regions with a salicide block layer are employed in this device to constitute a heavily doped p^＋-n^＋ junction which has soft ＂knee＂ Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.

Analysis of Optical Readout Sensitivity for Uncooled Infrared Detector

An optical readout uncooled infrared detector, employing a substrate-free focal plane array with pitch size 60μm, is established. The reflector deformation induced by the stress mismatching of the bi-layer structure is discussed and, in turn, a universal solution to determine both the optical readout sensitivity and the optimal filter position is found. By applying this solution, the optical readout sensitivity for the ideal plane reflector could theoretically increase by 80% as compared with the conventional operation, and the sensitivity loss caused by the reflector deformation can also be reduced to a reasonable level.

Tunable optical filter using second-order micro-ring resonator

In this paper, we design and fabricate a silicon integrated optical filter consisting of two cascaded micro-ring resonators and two straight waveguides. Two micro-heaters are fabricated on the top of two micro-rings respectively, which are employed to modulate the micro-rings to perform the function of a tunable optical filter by the thermo–optic effect. The static response test indicates that the extinction ratio and 3-d B bandwidth are 29.01 d B and 0.21 nm respectively, the dynamic response test indicates that the 10%–90% rise and 90%–10% fall time of the filter are 16 μs and 12 μs, respectively,which can meet the requirements of optical communication and information processing. Finally, the power consumption of the device is also characterized, and the total power consumption is about 9.43 m W/nm, which has been improved efficiently.

Determining the imaging plane of a retinal capillary layer in adaptive optical imaging

Even in the early stage,endocrine metabolism disease may lead to micro aneurysms in retinal capillaries whose diameters are less than 10 μm.However,the fundus cameras used in clinic diagnosis can only obtain images of vessels larger than 20 μm in diameter.The human retina is a thin and multiple layer tissue,and the layer of capillaries less than10 μm in diameter only exists in the inner nuclear layer.The layer thickness of capillaries less than 10 μm in diameter is about 40 μm and the distance range to rod＆cone cell surface is tens of micrometers,which varies from person to person.Therefore,determining reasonable capillary layer（CL） position in different human eyes is very difficult.In this paper,we propose a method to determine the position of retinal CL based on the rod＆cone cell layer.The public positions of CL are recognized with 15 subjects from 40 to 59 years old,and the imaging planes of CL are calculated by the effective focal length of the human eye.High resolution retinal capillary imaging results obtained from 17 subjects with a liquid crystal adaptive optics system（LCAOS） validate our method.All of the subjects＇ CLs have public positions from 127 μm to 147 μm from the rod＆cone cell layer,which is influenced by the depth of focus.

All-optical error-bit amplitude monitor based on NOT and AND gates in cascaded semiconductor optical amplifiers

This paper proposes and simulates a novel all-optical error-bit amplitude monitor based on cross-gain modulation and four-wave mixing in cascaded semiconductor optical amplifiers （SOAs）, which function as logic NOT and logic AND, respectively. The proposed scheme is successfully simulated for 40 Gb/s return-to-zero （RZ） signal with different duty cycles. In the first stage, the SOA is followed by a detuning filter to accelerate the gain recovery as well as improve the extinction ratio. A clock probe signal is used to avoid the edge pulse-pairs in the output waveform. Among these RZ formats, 33% RZ format is preferred to obtain the largest eye opening. The normalized error amplitude, defined as error bit amplitude over the standard mark amplitude, has a dynamic range from 0.1 to 0.65 for all RZ formats. The simulations show small input power dynamic range because of the nonlinear gain variation in the first stage. This scheme is competent for nonreturn-to-zero format at 10Gb/s as well.

Reconfigurable all-optical dual-directional half-subtractor for high-speed differential phase shift keying signal based on semiconductor optical amplifiers

All-optical digital logic elementary circuits are the building blocks of many important computational operations in future high-speed all-optical networks and computing systems. Multifunetional and reconfigurable logic units are essential in this respect. Employing the demodulation properties of delay interferometers for input differential phase shift keying signals and the gain saturation effect in two parallel semiconductor optical amplifiers, a novel design of 40 Cbit/s reconfigurable all-optical dual-directional half-subtractor is proposed and demonstrated. All output logic results show that the scheme achieves over 11=dB extinction ratio, clear and wide open eye diagram, as well as low polarization dependence （〈 1 dB）, without using any additional input light beam. The scheme may provide a promising candidate for future ultrafast all-optical signal processing applications.

Hybrid Fiber Optical Bistability and Optical Signal Processing

A hybrid fiber optical bistable device with electrical feedback has been proposed and analyzed.Bistability operation and some applications for optical signal processing have been realized experimentally .