An experimental way for the thermal characterization of semiconductor lasers based on I V method under pulse driving conditions has been developed, with which the thermal characteristics of strain compensated 1.3 μm ...An experimental way for the thermal characterization of semiconductor lasers based on I V method under pulse driving conditions has been developed, with which the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser chips have been investigated. The results show that, by measuring and analyzing the I V characteristics under appropriate pulse driving conditions at different heat sink temperatures, the thermal resistance of the laser diodes could be easily deduced. The driving current and junction voltage waveforms of the laser chips under different pulse driving conditions are also discussed.展开更多
文摘An experimental way for the thermal characterization of semiconductor lasers based on I V method under pulse driving conditions has been developed, with which the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser chips have been investigated. The results show that, by measuring and analyzing the I V characteristics under appropriate pulse driving conditions at different heat sink temperatures, the thermal resistance of the laser diodes could be easily deduced. The driving current and junction voltage waveforms of the laser chips under different pulse driving conditions are also discussed.