High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickn...High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickness waveguide are regrown simultaneously,which not only offeres the separated optimization of the active region and the integrated spotsize converter,but also reduces the difficulty of the butt joint selective regrowth.The threshold current is as low as 4 4mA.The output power at 49mA is 10 1mW.The side mode suppression ratio (SMSR) is 33 2dB.The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively,the 1dB misalignment tolerance are 3 6μm and 3 4μm.展开更多
A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A...A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A power HBT with double size of emitter of (3μm×15μm)×12 is fabricated.When the packaged HBT operates in class AB at a collector bias of 3V,a maximum 23dBm output power with 45% power added efficiency is achieved at 2GHz.The results show that the InGaP/GaAs power HBTs have great potential in mobile communication systems operating at low bias voltage.展开更多
A kind of super performance InGaP/GaAs HBT with f T=108GHz and f max =140GHz is demonstrated.The excellent frequency performance results from the novel structure of the U shaped emitter,together with sel...A kind of super performance InGaP/GaAs HBT with f T=108GHz and f max =140GHz is demonstrated.The excellent frequency performance results from the novel structure of the U shaped emitter,together with self aligned emitter and LEU(lateral etched undercut) technologies.The HBT with the novel structure shows a distinguished performance with BV CEO up to 25V.And excellent performance of low V offset of 105mV and V knee of 0 50V is great favor of low power applications.The differences due to the different structure are also compared.展开更多
文摘High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickness waveguide are regrown simultaneously,which not only offeres the separated optimization of the active region and the integrated spotsize converter,but also reduces the difficulty of the butt joint selective regrowth.The threshold current is as low as 4 4mA.The output power at 49mA is 10 1mW.The side mode suppression ratio (SMSR) is 33 2dB.The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively,the 1dB misalignment tolerance are 3 6μm and 3 4μm.
文摘A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A power HBT with double size of emitter of (3μm×15μm)×12 is fabricated.When the packaged HBT operates in class AB at a collector bias of 3V,a maximum 23dBm output power with 45% power added efficiency is achieved at 2GHz.The results show that the InGaP/GaAs power HBTs have great potential in mobile communication systems operating at low bias voltage.
文摘A kind of super performance InGaP/GaAs HBT with f T=108GHz and f max =140GHz is demonstrated.The excellent frequency performance results from the novel structure of the U shaped emitter,together with self aligned emitter and LEU(lateral etched undercut) technologies.The HBT with the novel structure shows a distinguished performance with BV CEO up to 25V.And excellent performance of low V offset of 105mV and V knee of 0 50V is great favor of low power applications.The differences due to the different structure are also compared.
