High-performance omnidirectional self-powered photodetector constructed by CsSnBr_(3)/ITO heterostructure film

Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.

High performance Cu2O film/ZnO nanowires self-powered photodetector by electrochemical deposition

Self-powered photodetectors based on nanomaterials have attracted lots of attention for several years due to their various advantages.In this paper,we report a high performance Cu2O/ZnO self-powered photodetector fabricated by using electrochemical deposition.ZnO nanowires arrays grown on indium-tin-oxide glass are immersed in Cu2O film to construct type-Ⅱband structure.The Cu2O/ZnO photodetector exhibits a responsivity of 0.288 mA/W at 596 nm without bias.Compared with Cu2O photoconductive detector,the responsivity of the Cu2O/ZnO self-powered photodetector is enhanced by about two times at 2 V bias.It is attributed to the high power conversion efficiency and the efficient separation of the photogenerated electron-hole pairs,which are provided by the heterojunction.The outstanding comprehensive performances make the Cu2O film/ZnO nanowires self-powered photodetector have great potential applications.

High-performance self-powered photodetector based on organic/inorganic hybrid van der Waals heterojunction of rubrene/silicon

Organic/inorganic hybrid van der Waals heterostructure with an atomically abrupt interface has attracted great research interests within the field of multifunctional electronic and optoelectronic devices.The integration of organic rubrene films with inorganic Si semiconductors can avoid the atomic mutual-diffusion at the interface,and provide the possibility of forming two-dimensional van der Waals heterojunction accompanied with the type-II energy band alignment,due to the transfer behaviors of majority carriers at the interface.In this study,the high-quality rubrene/Si van der Waals heterostructure with an electronically abrupt junction was prepared,and a self-powered photodetector was then constructed based on this hybrid heterojunction.The photodetector demonstrated an excellent switching response to the 1064 nm monochromatic light with large on/off current ratio of 7.0×10^(3),the maximum photocurrent of 14.62 m A,the maximum responsivity of 2.07 A/W,the maximum detectivity of 2.9×10^(11)Jones,and a fast response time of 13.0μs.This study offers important guidance for preparing high-quality rubrene/Si hybrid van der Waals heterostructure with desirable band alignment,and the designed heterojunction photodetector has an important application prospect in the field of multifunctional optoelectronics.

Organic bulk heterojunction enabled with nanocapsules of hydrate vanadium pentaoxide layer for high responsivity self-powered photodetector

This article demonstrates the fabrication of organic-based devices using a low-cost solution-processable technique.A blended heterojunction of chlorine substituted 2D-conjugated polymer PBDB-T-2Cl,and PC71BM supported nanocapsules hy-drate vanadium penta oxides(HVO)as hole transport layer(HTL)based photodetector fabricated on an ITO coated glass sub-strate under ambient condition.The device forms an excellent organic junction diode with a good rectification ratio of~200.The device has also shown excellent photodetection properties under photoconductive mode(at reverse bias)and zero bias for green light wavelength.A very high responsivity of~6500 mA/W and high external quantum efficiency(EQE)of 1400%have been reported in the article.The proposed organic photodetector exhibits an excellent response and recovery time of~30 and~40 ms,respectively.

Transmittance contrast-induced photocurrent:A general strategy for self-powered photodetectors based on MXene electrodes

The regulation of carrier generation and transport by Schottky junctions enables effective optoelectronic conversion in optoelectronic devices.A simple and general strategy to spontaneously generate photocurrent is of great signifi-cance for self-powered photodetectors but is still being pursued.Here,we pro-pose that a photocurrent can be induced at zero bias by the transmittance contrast of MXene electrodes in MXene/semiconductor Schottky junctions.Two MXene electrodes with a large transmittance contrast(84%)between the thin and thick zones were deposited on the surface of a semiconductor wafer using a simple and robust solution route.Kelvin probe force microscopy tests indicated that the photocurrent at zero bias could be attributed to asymmetric carrier generation and transport between the two Schottky junctions under illumination.As a demonstration,the MXene/GaN ultraviolet(UV)photo-detector exhibits excellent performance superior to its counterpart without transmittance contrast,including high responsivity(81 mA W–1),fast response speed(less than 31 and 29 ms)and ultrahigh on/off ratio(1.33�106),and good UV imaging capability.Furthermore,this strategy has proven to be uni-versal for first-to third-generation semiconductors such as Si and GaAs.These results provide a facile and cost-effective route for high-performance self-powered photodetectors and demonstrate the versatile and promising applica-tions of MXene electrodes in optoelectronics.

Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires

Due to the wide range of potential applications for next-generation multi-functional devices,the flexible selfpowered photodetector(PD)with polarity-switchable behavior is essential but very challenging to be realized.Herein,a wearable bidirectional self-powered PD based on detached(Al,Ga)N and(In,Ga)N nanowires has been proposed and demonstrated successfully.Arising from the photovoltage-competing dynamics across(Al,Ga)N and(In,Ga)N nanowire photoelectrodes,such PD can generate the positive(33.3 mA W−1)and negative(-0.019 mA W−1)photo-responsivity under ultraviolet(UV)and visible illumination,respectively,leading to the bidirectional photocurrent behavior.Thanks to the introduction of quasi solid-state hydrogel,the PD can work without the liquid-electrolyte,thus remarkably reducing the volume from about 482 cm3 to only 0.18 cm3.Furthermore,the use of hydrogel is found to enhance response speed in the UV range by reducing the response time for more than 95%,which is mainly attributed to the increased open circuit potential and reduced ion transport distance.As the GaN connecting segment is pretty thin,the piezoelectric charges generated by stress are proposed to have only a limited effect on the photocurrent density.Therefore,both the stable on-off switching characteristics and photocurrent densities can still be achieved after being bent 400 times.With an excellent flexibility,this work creates opportunities for technological applications of bidirectional photocurrent PDs in flexible optoelectronic devices,e.g.,wearable intelligent sensors.

CuO–TiO_(2) based self-powered broad band photodetector

An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is demonstrated.The CuO–TiO_(2)nanocomposites were grown in a two-zone horizontal tube furnace on a 40 nm TiO_(2)thin film deposited on a p-type Si(100)substrate.The CuO–TiO_(2)/TiO_(2)/p-Si(100)devices exhibited excellent rectification characteristics under dark and individual photoillumination conditions.The devices showed remarkable photo-response under broadband(300–1100 nm)light illumination at zero bias voltage,indicating the achievement of highly sensitive self-powered photodetectors at visible and near-infrared light illuminations.The maximum response of the devices is observed at 300 nm for an illumination power of 10 W.The response and recovery times were calculated as 86 ms and 78 ms,respectively.Moreover,under a small bias,the devices showed a prompt binary response by altering the current from positive to negative under illumination conditions.The main reason behind this binary response is the low turn-on voltage and photovoltaic characteristics of the devices.Under illumination conditions,the generation of photocurrent is due to the separation of photogenerated electron-hole pairs within the built-in electric field at the CuO–TiO_(2)/TiO_(2)interface.These characteristics make the CuO–TiO_(2)/TiO_(2)broadband photodetectors suitable for applications that require high response speeds and self-sufficient functionality.

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga_(2)O_(3)

Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable devices.How-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these devices.Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their performance.Herein,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) heterojunction.The self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after damage.After self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse speed.Such a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.

Energy harvesting and speed sensing with a hybrid rotary generator for self-powered wireless monitoring

Real-time onboard health monitoring systems are critical for the railway industry to maintain high service quality and operational safety.However,the issue with power supplies for monitoring sensors persists,especially for freight trains that lack onboard power.Here,we propose a hybrid piezoelectric-triboelectric rotary generator(HPT-RG)for energy harvesting and vehicle speed sensing.The HPT-RG incorporates a rotational self-adaptive technique that softens the equivalent stiffness,enabling the piezoelectric non-resonant beam to surpass resonance limitations in a low-frequency region.The experiments demonstrate the feasibility of using the HPT-RG as an energy harvesting module to collect the rotational energy of the freight rail transport and power the wireless temperature sensors.To allow multiple monitoring in confined spaces on trains,a triboelectric sensing module is added to the HPT-RG to sense the operation speed and mileage of vehicles.Furthermore,the generator exhibits favorable mechanical durability under more than 600 h of official testing on the train bogie axle.The proposed HPT-RG is essential for creating a truly self-powered,maintenance-free,and zero-carbon onboard wireless monitoring system on freight railways.

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

A self-powered ultraviolet photodetector based on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction with low noise and stable photoresponse

A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-grown Ga_(2)O_(3)film.The results show that a typical type-I heterojunction is formed at the interface of the Ga_(2)O_(3)film and clustered Bi_(2)WO_(6),which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV light.Moreover,the Ga_(2)O_(3)/Bi_(2)WO_(6)PD displays excellent photodetection performance with an ultra-low dark current of~6 fA,and a high light-to-dark current ratio(PDCR)of 3.5 x 10^(4)in self-powered mode(0 V),as well as a best responsivity result of 2.21 mA/W in power supply mode(5 V).Furthermore,the PD possesses a stable and fast response speed under different light intensities and voltages.At zero voltage,the PD exhibits a fast rise time of 132 ms and 162 ms,as well as a quick decay time of 69 ms and 522 ms,respectively.In general,the newly attempted Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.

Metal-Halide Perovskite Submicrometer-Thick Films for Ultra-Stable Self-Powered Direct X-Ray Detectors

Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has also been recently demonstrated in both bulk materials and thin films.However,the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours,often reporting degradation of the detection performance.Here it is shown that self-powered direct X-ray detectors,fabricated starting from a FAPbBr_(3)submicrometer-thick film deposition onto a mesoporous TiO_(2)scaffold,can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss,demonstrating ultra-high operational stability and excellent repeatability.No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy,revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film.In addition,trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy^(−1)cm^(−3)at 0 V,an unprecedented value in the field of thin-film-based photoconductors and photodiodes for“hard”X-rays.Finally,prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.

Wearable Triboelectric Nanogenerators Based on Printed Polyvinylidene Fluoride Films Incorporated with Cobalt-Based Metal-Organic Framework for Self-Powered Mobile Electronics

In this study,wearable triboelectric nanogenerators comprising bar-printed polyvinylidene fluoride(PVDF)films incorporated with cobalt-based metal-organic framework(Co-MOF)were developed.The enhanced output performance of the TENGs was attributed to the phase transition of PVDF from a-crystals toβ-crystals,as facilitated by the incorporation of the MOF.The synthesis conditions,including metal ion,concentration,and particle size of the MOF,were optimized to increase open-circuit voltage(VOC)and open-circuit current(I_(SC))of PVDF-based TENGs.In addition to high operational stability,mechanical robustness,and long-term reliability,the developed TENG consisting of PVDF incorporated with Co-MOF(Co-MOF@PVDF)achieved a VOC of 194 V and an I_(SC)of 18.8μA.Furthermore,the feasibility of self-powered mobile electronics was demonstrated by integrating the developed wearable TENG with rectifier and control units to power a global positioning system(GPS)device.The local position of the user in real-time through GPS was displayed on a mobile interface,powered by the battery charged through friction-induced electricity generation.

Multilayered PdTe_(2)/thin Si heterostructures as self-powered flexible photodetectors with heart rate monitoring ability

Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices.Herein,we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe2 multilayer on a thin Si film.A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 105,a decent responsivity of~343 mA/W,a respectable specific detectivity of~2.56×10^(12)Jones,and a rapid response time of 4.5/379μs,under 730 nm light irradiation.The detector also displays an outstanding long-term air stability and operational durability.In addition,thanks to the excellent flexibility,the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests.Furthermore,the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate,suggesting a possible application in the area of flexible and wearable health monitoring.

A fast-response self-powered UV–Vis–NIR broadband photodetector based on a AgIn_(5)Se_(8)/t-Se heterojunction

A type Ⅱ p–n heterojunction could improve the photodetection performance of a photodetector due to the excellent ability of carrier separation. N-type AgIn_(5)Se_(8)(AIS) exhibits a large optical absorption coefficient, high optical conductivity and a suitable bandgap, and shows potential application in broadband photodetection. Even though our previous study on AgIn_(5)Se_(8)/FePSe_(3)obtained a good response speed, it still gave low responsivity due to the poor quality of the p-type FePSe_(3)thin film. Se, with a direct bandgap(around 1.7 eV), p-type conductivity, high electron mobility and high carrier density,is likely to form a low-dimensional structure, which leads to an increase in the effective contact area of the heterojunction and further improves the photodetector performance. In this work, continuous and dense t-Se thin film was prepared by electrochemical deposition. The self-powered AgIn5Se8/t-Se heterojunction photodetector exhibited a broadband detection range from 365 nm to 1200 nm. The responsivity and detectivity of the heterojunction photodetector were 32 μA/W and 1.8×109Jones, respectively, which are around 9 and 4 times higher than those of the AgIn_(5)Se_(8)/FePSe_(3)heterojunction photodetector. The main reason for this is the good quality of the t-Se thin film and the formation of the low-dimensional t-Se nanoribbons, which optimized the transport pathway of carriers. The results indicate that the AgIn_(5)Se_(8)/t-Se heterojunction is an excellent candidate for broadband and self-powered photoelectronic devices.

PdSe_(2)/MoSe_(2) vertical heterojunction for self-powered photodetector with high performance

Van der Waals’two-dimensional(2D)material heterostructure engineering offers an effective strategy for the design of multifunctional and high-performance optoelectronic devices.However,2D heterostructure photodetectors with a photoconductive effect tend to suffer from high driving source-drain voltages and significant dark noise currents.Herein,a self-powered photodetector with high performance was fabricated based on vertically stacked graphene/MoSe_(2)/PdSe_(2)/graphene heterojunctions through a dry transfer method.The fabricated device displays current rectification characteristics in darkness(on/off ratio>10^(3))and superior photovoltaic behaviors under illumination.In addition,benefitting from the strong built-in field,the Gr/PdSe_(2)/MoSe_(2)/Gr heterojunction photodetector is able to respond to a broad spectrum from visible to near-infrared(NIR)with a remarkable responsivity of 651 mA·W^(−1),a high specific detectivity of 5.29×10^(11) Jones and a fast response speed of 41.7/62.5μs.Moreover,an enhanced responsivity of 1.16 A·W^(−1) has been obtained by a reverse voltage(−1 V)and further evaluation on image recognition has also demonstrated the great application potential of the Gr/MoSe_(2)/PdSe_(2)/Gr heterojunction photodetector.The findings are expected to bring new opportunities for the development of highly sensitive,high-speed and energy-efficient photodetectors for comprehensive applications.

CsPbI nanorods as the interfacial layer for high-performance,all-solution-processed self-powered photodetectors

Heterojunction is regarded as a crucial step toward realizing high-performance devices,particularly,forming gradient energy band between heterojunctions benefits self-powered photodetectors.Therefore,in this paper,the synthesis of CsPbI3 nanorods(NRs)and its application as the interfacial layer in high-performance,all-solution-processed self-powered photodetectors are presented.For the bilayer photodetector ITO/ZnO(100 nm)/PbS-TBAI(150 nm)/Au,a responsivity of 3.6 A/W with a specific detectivity of 9.8×10^(12)Jones was obtained under 0.1 mW/cm^(2)white light illumination at zero bias(i.e.in self-powered mode).Meanwhile,the photocurrent was enhanced to an On/Off current ratio of 105 at zero bias with an open circuit voltage of 0.53 V for trilayer photodetector ITO/ZnO(100 nm)/PbSTBAI(150 nm)/CsPbI3(250 nm)/Au,in which the CsPbI3 NRs layer works as the interfacial layer.As a result,a specific detectivity of 4.5×10^(13)Jones with a responsivity of 11.12 A/W was obtained under0.1 mW/cm^(2) white light illumination,as well as the rising/decaying time of 0.57 s/0.41 s with excellent stability and reproducibility upto four weeks in air.The enhanced-performance is ascribed to the mismatch bandgap between PbS-TBAI/CsPbI_(3)interface,which can suppress the carrier recombination and provide efficient transport passages for charge carriers.Thus,it provides a feasible and efficient method for high-performance photodetectors.

Enhanced-performance self-powered photodetector based on multi-layer MoS_(2) sandwiched between two asymmetric graphene contacts

Self-powered photodetectors can convert light into electrical signals without external power input and are widely used in applications such as imaging,sensing,communication,and security.The most popular approach for constructing a self-powered photodetector is typically based on the fabrication of an asymmetric metal-semiconductor(MS)contact;however,this technique is seriously limited by the Fermi-level pinning effect.Here,we report a room-temperature photodetector based on multi-layer MoS_(2) sandwiched between two separated asymmetric graphene contacts.Our photodetector was driven by the built-in electric field generated by a van der Waals(vd W)contact instead of the traditional MS contact.Operating under zero-bias voltage,the highest photoresponsivity of 0.63 AW^(-1) and a specific detectivity of 7.71×10^(12) Jones were achieved at a wavelength of 450 nm with 0.08μW cm^(-2) incident power intensity.Compared with devices using symmetric contacts,a high ON/OFF current ratio of approximately 1520 and a fast response time on the order of microseconds were also observed in our asymmetric graphene contact device.Our experimental results may open a novel way toward the realization of vd W contacts for the fabrication of selfpowered photodetectors.

Mechanoluminescent-Triboelectric Bimodal Sensors for Self-Powered Sensing and Intelligent Control

Self-powered flexible devices with skin-like multiple sensing ability have attracted great attentions due to their broad applications in the Internet of Things(IoT).Various methods have been proposed to enhance mechano-optic or electric performance of the flexible devices;however,it remains challenging to realize the display and accurate recognition of motion trajectories for intelligent control.Here,we present a fully self-powered mechanoluminescent-triboelectric bimodal sensor based on micronanostructured mechanoluminescent elastomer,which can patterned-display the force trajectories.The deformable liquid metals used as stretchable electrode make the stress transfer stable through overall device to achieve outstanding mechanoluminescence(with a gray value of 107 under a stimulus force as low as 0.3 N and more than 2000 cycles reproducibility).Moreover,a microstructured surface is constructed which endows the resulted composite with significantly improved triboelectric performances(voltage increases from 8 to 24 V).Based on the excellent bimodal sensing performances and durability of the obtained composite,a highly reliable intelligent control system by machine learning has been developed for controlling trolley,providing an approach for advanced visual interaction devices and smart wearable electronics in the future IoT era.