^(199)Hg NHR spectra of 18 Schiff base type arylmercury compounds have been studied.It was further confirmed that in the molecule of XC_6H_4CH=NC_6H_3-2-HgC1-4-CH_3 there exists an intramolecular N→Hg coordination vi...^(199)Hg NHR spectra of 18 Schiff base type arylmercury compounds have been studied.It was further confirmed that in the molecule of XC_6H_4CH=NC_6H_3-2-HgC1-4-CH_3 there exists an intramolecular N→Hg coordination via a four-membered ring.For the series of XC_6H_4CH=NC_6H_3-2-HgCl-4-CH_3(X is a para-or mera-substituent),there is a good linear correlation between δ^(199)Hg and Hammett's o constants.The influence of substituents of C-pheny1 ring on the δ ^(199)Hg can be explained in terms of the intramolecular N→Hg coordination.展开更多
The transmetallation reaction of 4 Schiff base type arylmercury compounds with metallic tin has been carried out in refluxing xylene.It was found that the reaction proceeds in the same manner as that of chloro[2-(phen...The transmetallation reaction of 4 Schiff base type arylmercury compounds with metallic tin has been carried out in refluxing xylene.It was found that the reaction proceeds in the same manner as that of chloro[2-(phenylazo)phenyl]mercury(Ⅱ) to give dichlorobisaryltin(Ⅳ).The ~1H NMR spectra of the products provide evidence for the presence of N→Sn intramolecular coordination.The formation of dichlorobisaryltin(Ⅳ)as a unique product probably arises from the N→Sn intramolecular coordination which results in the increasing of the stability of the molecule.展开更多
The effect of fluoride ions on the formation and dissolution behaviour of anodic oxide films on Ti has been investigated in acidic fluoride media (pH=1) using impedance and galvanostatic techniques. A5 the fluoride io...The effect of fluoride ions on the formation and dissolution behaviour of anodic oxide films on Ti has been investigated in acidic fluoride media (pH=1) using impedance and galvanostatic techniques. A5 the fluoride ion concentration and temperature increase the rate of oxide film formation decreases while the dissolution process increases. oxide film formed at high tem-perature and formation voltage was found to contain more defect sites in the film than that formed at a lower one. Activation energies are calculated during the oxide film formation and dissolution and found to be 20.76 and 28.72 kJ/mol, respectively. Formation rate and reciprocal capacitance data are reported as a function of polarizing current density. Values are recorded for the electrolytic parameters A and B. Potentiostatic curves are derived from the galvanostatic results.展开更多
文摘^(199)Hg NHR spectra of 18 Schiff base type arylmercury compounds have been studied.It was further confirmed that in the molecule of XC_6H_4CH=NC_6H_3-2-HgC1-4-CH_3 there exists an intramolecular N→Hg coordination via a four-membered ring.For the series of XC_6H_4CH=NC_6H_3-2-HgCl-4-CH_3(X is a para-or mera-substituent),there is a good linear correlation between δ^(199)Hg and Hammett's o constants.The influence of substituents of C-pheny1 ring on the δ ^(199)Hg can be explained in terms of the intramolecular N→Hg coordination.
文摘The transmetallation reaction of 4 Schiff base type arylmercury compounds with metallic tin has been carried out in refluxing xylene.It was found that the reaction proceeds in the same manner as that of chloro[2-(phenylazo)phenyl]mercury(Ⅱ) to give dichlorobisaryltin(Ⅳ).The ~1H NMR spectra of the products provide evidence for the presence of N→Sn intramolecular coordination.The formation of dichlorobisaryltin(Ⅳ)as a unique product probably arises from the N→Sn intramolecular coordination which results in the increasing of the stability of the molecule.
文摘The effect of fluoride ions on the formation and dissolution behaviour of anodic oxide films on Ti has been investigated in acidic fluoride media (pH=1) using impedance and galvanostatic techniques. A5 the fluoride ion concentration and temperature increase the rate of oxide film formation decreases while the dissolution process increases. oxide film formed at high tem-perature and formation voltage was found to contain more defect sites in the film than that formed at a lower one. Activation energies are calculated during the oxide film formation and dissolution and found to be 20.76 and 28.72 kJ/mol, respectively. Formation rate and reciprocal capacitance data are reported as a function of polarizing current density. Values are recorded for the electrolytic parameters A and B. Potentiostatic curves are derived from the galvanostatic results.
