The objective of this work is to analyze the transient effects of ^60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electr...The objective of this work is to analyze the transient effects of ^60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11805155,11875223,and 11690043)the Chinese Academy of Sciences strategic pilot science and technology project(No.XDA15015000)+1 种基金the Innovation Foundation of Radiation Application(No.KFZC2018040201)the Foundation of State Key Laboratory of China(Nos.SKLIPR1803 and 1610)
文摘The objective of this work is to analyze the transient effects of ^60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.
