Double-layer emitters with different doping concentrations （DLE） have been designed and prepared for amorphous silicon/crystalline silicon （ct-Si：H/c-Si） hetero- junction solar cells. Compared with the traditiona...Double-layer emitters with different doping concentrations （DLE） have been designed and prepared for amorphous silicon/crystalline silicon （ct-Si：H/c-Si） hetero- junction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation （AFORS-HET, http：//www.paper.edu.cn/html/releasepaper/2014/04/282/） prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency （QE） results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.展开更多
文摘室温下电子束蒸发沉积氧化钼（MoOx）薄膜呈非晶态,光学带隙约为3.6 eV,与单晶硅表面构成MoOx/c-Si异质结并具有钝化作用,但明显低于i∶α-Si∶H钝化。ITO/MoOx/i∶α-Si∶H/n∶c-Si/i∶α-Si∶H/n＋∶α-Si∶H/Al太阳电池结构,既有晶硅前后表面钝化,又增加了背电场层,适当的MoOx厚度可获得电池的最高效率（15.5%）;若取消晶硅表面i∶a-Si∶H钝化,与HIT（heterojunction with intrinsic thinlayer）电池类似,硅的前表面复合增大,电池效率降为11.5%;若取消背表面i∶a-Si∶H钝化及背电场材料n＋∶a-Si∶H,电池效率急剧下降到8.3%,这表明背表面钝化及背电场,对MoOx/c-Si异质结太阳电池特性具有更为重要的作用,对高效器件制备具有一定指导意义。
基金Acknowledgements This work was supported by the National Natural Science Foundation of China （Grant nos. 61306084, 61464007）, Open Fund of Jiangsu Key Laboratory of Materials and Technology for Energy Conversion （Grant no. NJ20160032）, and Key Research and Development Program of Jiangxi Province, China （Grant no. 2016BBH80043）.
文摘Double-layer emitters with different doping concentrations （DLE） have been designed and prepared for amorphous silicon/crystalline silicon （ct-Si：H/c-Si） hetero- junction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation （AFORS-HET, http：//www.paper.edu.cn/html/releasepaper/2014/04/282/） prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency （QE） results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.
