In recent years,gas electron multiplier(GEM)neutron detectors have been developing towards high spatial resolution and high dynamic counting range.We propose a novel concept of an Al stopping layer to enable the detec...In recent years,gas electron multiplier(GEM)neutron detectors have been developing towards high spatial resolution and high dynamic counting range.We propose a novel concept of an Al stopping layer to enable the detector to achieve sub-millimeter(sub-mm)spatial resolution.The neutron conversion layer is coated with the Al stopping layer to limit the emission angle of ions into the drift region.The short track projection of ions is obtained on the signal readout board,and the detector would get good spatial resolution.The spatial resolutions of the GEM neutron detector with the Al stopping layer are simulated and optimized based on Geant4 Garfield Interface.The spatial resolution of the detector is 0.76 mm and the thermal neutron detection efficiency is about 0.01%when the Al stopping layer is 3.0μm thick,the drift region is 2 mm thick,the strip pitch is 600μm,and the digital readout is employed.Thus,the GEM neutron detector with a simple detector structure and a fast readout mode is developed to obtain a high spatial resolution and high dynamic counting range.It could be used for the direct measurement of a high-flux neutron beam,such as Bragg transmission imaging,very small-angle scattering neutron detection and neutron beam diagnostic.展开更多
This paper investigates shear horizontal （SH） waves propagating in a periodically layered structure that consists of piezoelectric （PE） layers perfectly bonded with piezomagnetic （PM） layers alternately. The exp...This paper investigates shear horizontal （SH） waves propagating in a periodically layered structure that consists of piezoelectric （PE） layers perfectly bonded with piezomagnetic （PM） layers alternately. The explicit dispersion relations are derived for the two cases when the propagation directions of SH waves are normal to the interface and parallel to the interface, respectively. The asymptotic expressions for dispersion relations are also given when the wave number is extremely small. Numerical results for stop band effect and phase velocity are presented for a periodic system of alternating BaTiO3 and Terfenol-D layers. The influence of volume fraction on stop band effect and dispersion behaviors is discussed and revealed.展开更多
A novel high performance trench field stop （TFS） superjunction （S J） insulated gate bipolar transistor （IGBT） with a buried oxide （BO） layer is proposed in this paper. The BO layer inserted between the P-base ...A novel high performance trench field stop （TFS） superjunction （S J） insulated gate bipolar transistor （IGBT） with a buried oxide （BO） layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT （Conv-SJ）, the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop （gce（on）） and an improved tradeoff between gee（on） and turn-off loss （Eoff）, with no breakdown voltage （BV） degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5μm and Nn = Np = 3 × 10^15 cm^-3, the Vce（on） and Eoff of the proposed structure are 1.08 V and 2.81 mJ/cm2 with the collector doping concentration Nc = 1 × 10^18 cm^-3 and 1.12 V and 1.73 mJ/cm2 with Nc = 5 × 10^17 cm^-3, respectively. However, with the same device parameters, the Vce（on） and Eoff for the Conv-SJ are 1.81 V and 2.88 mJ/cm2 with Nc= 1 × 10^18 cm^-3 and 1.98 V and 2.82 mJ/cm2 with Nc = 5 ×10^17 cm^-3, respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.展开更多
基金supported by the National Key R&D Program of China(Grant No.2017YFA0403702)the National Natural Science Foundation of China(Grant Nos.11574123,11775243,12175254,and U2032166)+1 种基金Youth Innovation Promotion Association CAS and Guangdong Basic and Applied Basic Research Foundation(Grant No.2019A1515110217)the Xie Jialin Foundation,China(Grant No.E1546FU2)。
文摘In recent years,gas electron multiplier(GEM)neutron detectors have been developing towards high spatial resolution and high dynamic counting range.We propose a novel concept of an Al stopping layer to enable the detector to achieve sub-millimeter(sub-mm)spatial resolution.The neutron conversion layer is coated with the Al stopping layer to limit the emission angle of ions into the drift region.The short track projection of ions is obtained on the signal readout board,and the detector would get good spatial resolution.The spatial resolutions of the GEM neutron detector with the Al stopping layer are simulated and optimized based on Geant4 Garfield Interface.The spatial resolution of the detector is 0.76 mm and the thermal neutron detection efficiency is about 0.01%when the Al stopping layer is 3.0μm thick,the drift region is 2 mm thick,the strip pitch is 600μm,and the digital readout is employed.Thus,the GEM neutron detector with a simple detector structure and a fast readout mode is developed to obtain a high spatial resolution and high dynamic counting range.It could be used for the direct measurement of a high-flux neutron beam,such as Bragg transmission imaging,very small-angle scattering neutron detection and neutron beam diagnostic.
基金supported by the National Natural Science Foundation of China (Nos.10672108,10572069 and 10820101048)
文摘This paper investigates shear horizontal （SH） waves propagating in a periodically layered structure that consists of piezoelectric （PE） layers perfectly bonded with piezomagnetic （PM） layers alternately. The explicit dispersion relations are derived for the two cases when the propagation directions of SH waves are normal to the interface and parallel to the interface, respectively. The asymptotic expressions for dispersion relations are also given when the wave number is extremely small. Numerical results for stop band effect and phase velocity are presented for a periodic system of alternating BaTiO3 and Terfenol-D layers. The influence of volume fraction on stop band effect and dispersion behaviors is discussed and revealed.
基金Project supported by the National Science and Technology Major Project,China(Grant No.2011ZX02504-003)the Fundamental Research Funds for the Central Universities(Grant No.ZYGX2011J024)the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201301)
文摘A novel high performance trench field stop （TFS） superjunction （S J） insulated gate bipolar transistor （IGBT） with a buried oxide （BO） layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT （Conv-SJ）, the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop （gce（on）） and an improved tradeoff between gee（on） and turn-off loss （Eoff）, with no breakdown voltage （BV） degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5μm and Nn = Np = 3 × 10^15 cm^-3, the Vce（on） and Eoff of the proposed structure are 1.08 V and 2.81 mJ/cm2 with the collector doping concentration Nc = 1 × 10^18 cm^-3 and 1.12 V and 1.73 mJ/cm2 with Nc = 5 × 10^17 cm^-3, respectively. However, with the same device parameters, the Vce（on） and Eoff for the Conv-SJ are 1.81 V and 2.88 mJ/cm2 with Nc= 1 × 10^18 cm^-3 and 1.98 V and 2.82 mJ/cm2 with Nc = 5 ×10^17 cm^-3, respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.
