Interface effect on superlattice quality and optical properties of InAs/GaSb type-Ⅱ superlattices grown by molecular beam epitaxy

We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is 120 periods InAs(8 ML)/GaSb(6 ML)with different thicknesses of InSb interface grown by molecular beam epitaxy(MBE).The highresolution x-ray diffraction(XRD)curves display sharp satellite peaks,and the narrow full width at half maximum(FWHM)of the 0th is only 30-39 arcsec.From high-resolution cross-sectional transmission electron microscopy(HRTEM)characterization,the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished.As the InSb interface thickness increases,the compressive strain increases,and the surface“bright spots”appear to be more apparent from the atomic force microscopy(AFM)results.Also,photoluminescence(PL)measurements verify that,with the increase in the strain,the bandgap of the superlattice narrows.By optimizing the InSb interface,a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78μm,which can be used for mid-wave infrared(MWIR)detection.

Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-Ⅱ Superlattice

Type-Ⅱ InAs/GaSb superlattiees made of 13 InAs monolayers （MLs） and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserted between InAs and GaSb layers. We complete a series of experiments to investigate the influence of the InSb deposition time, Ⅴ/Ⅲ beam-equivalent pressure ratio and interruption time between each layer, and then characterize the superlattice （SL） structures with high-resolution x-ray diffraction and atomic force microscopy. The optimized growth parameters are applied to grow the 100-period SL structure, resulting in the full-width half-maximum of 29.55 arcsee for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak.

Growth of high material quality InAs/GaSb type-Ⅱ superlattice for long-wavelength infrared range by molecular beam epitaxy

By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality InAs/GaSb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray diffraction(HRXRD),atomic force microscopy(AFM),and Fourier transform infrared(FTIR)spectrometer are used to characterize the material growth quality.The results show that the full width at half maximum(FWHM)of the superlattice zero-order diffraction peak,the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks,and the surface roughness get the best results when the beam-equivalent pressure(BEP)ratio reaches the optimal value,which are 28 arcsec,13 arcsec,and 1.63?,respectively.The intensity of the zero-order diffraction peak is strongest at the optimal value.The relative spectral response of the LWIR detector shows that it exhibits a 100%cut-off wavelength of 12.6μm at 77 K.High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector.

Strain compensated type Ⅱ superlattices grown by molecular beam epitaxy

We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick In As/Al Sb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the In As sublayer was equal to the compressive strain energy in the Al Sb sublayer. For the four-constituent active region, as the compressive strain in the Ga0.65In0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped In As/Al Sb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of thickness 6 μm was grown on the Ga Sb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.

Strain-induced the dark current characteristics in InAs/GaSb type-Ⅱ superlattice for mid-wave detector

Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed during the growth process,which determines the performance of IR detectors.Therefore,great efforts have been made to properly control the strain effect and develop relevant analysis methods to evaluate the strain-induced dark current characteristics.In this work,we report the strain-induced dark current characteristics in InAs/GaSb T2SL MWIR photodetector.The overall strain of InAs/GaSb T2SL layer was analyzed by both high-resolution X-ray diffraction(HRXRD)and the dark current measured from the absorber layer at the elevated temperatures(≥110 K),where the major leakage current component is originated from the reduced minority carrier lifetime in the absorber layer.Our findings indicate that minority carrier lifetime increases as the tensile strain on the InAs/GaSb T2SL is more compensated by the compressive strain through‘InSb-like’interface,which reduces the dark current density of the device.Specifically,tensile strain compensated devices exhibited the dark current density of less than 2×10^-5 A/cm^2 at 120 K,which is more than one order of magnitude lower value compared to that of the device without tensile strain relaxation.

InAs/InAsSb type-Ⅱ superlattice with near room-temperature long-wave emission through interface engineering

Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL) have extensive application prospective in infrared photodetectors. Achieving higher operation temperature is critical to its commercial applications. Here, a fractional monolayer alloy method was used to grow InAsSb alloy with better controlled alloy composition. The as-grown T2SL gave eleven satellite peaks and a first satellite peak with a narrow full-width-half-maximum (FWHM) of 20.5arcsec (1 arcsec=0.01592°). Strain mapping results indicated limited Sb diffusion through the As-Sb exchange process at the interface. Moreover, unlike interface states caused by the As-Sb exchange effect, this relatively clear interface was distinctive with localized states with higher activation energies of the non-radiative recombination process ((18±1) meV and (84±12) meV at different temperature ranges), which means that this interface state introduced by fractional monolayer alloy growth method can effectively suppress Auger recombination process in T2SL. Through this interface engineering of InAs/InAsSb Type-Ⅱ superlattice, it achieved detective photoluminescence (PL) signal with the center wavelength of 9μm at 250K.

Peak structure in the interlayer conductance of Moirésuperlattices

We investigate the peak structure in the interlayer conductance of Moirésuperlattices using a tunneling theory wedeveloped previously.The theoretical results predict that,due to the resonance of two different partial waves,the doublepeakstructure can appear in the curve of the interlayer conductance versus twist angle.Furthermore,we study the influencesof the model parameters,i.e.,the chemical potential of electrodes,the thickness of Moirésuperlattice,and the strength ofinterface potential,on the peak structure of the interlayer conductance.In particular,the parameter dependence of the peakstructure is concluded via a phase diagram,and the physical meanings of the phase diagram is formulized.Finally,thepotential applications of the present work is discussed.

Moiré superlattices arising from growth induced by screw dislocations in layered materials

Moiré superlattices(MSLs) are modulated structures produced from homogeneous or heterogeneous two-dimensional layers stacked with a twist angle and/or lattice mismatch. Enriching the methods for fabricating MSL and realizing the unique emergent properties are key challenges in its investigation. Here we recommend that the spiral dislocation driven growth is another optional method for the preparation of high quality MSL samples. The spiral structure stabilizes the constant out-of-plane lattice distance, causing the variations in electronic and optical properties. Taking SnS_(2) MSL as an example, we find prominent properties including large band gap reduction(~ 0.4 e V) and enhanced optical activity. Firstprinciples calculations reveal that these unusual properties can be ascribed to the locally enhanced interlayer interaction associated with the Moiré potential modulation. We believe that the spiral dislocation driven growth would be a powerful method to expand the MSL family and broaden their scope of application.

Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice

In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.

An advanced theoretical approach to study super-multiperiod superlattices:theory vs experiments

A new theoretical method to study super-multiperiod superlattices has been developed.The method combines the precision of the 8-band kp-method with the flexibility of the shooting method and the Monte Carlo approach.This method was applied to examine the finest quality samples of super-multiperiod Al_(0.3)Ga_(0.7)As/GaAs superlattices grown by molecular beam epitaxy.The express photoreflectance spectroscopy method was utilized to validate the proposed theoretical method.For the first time,the accurate theoretical analysis of the energy band diagram of super-multiperiod superlattices with experimental verification has been conducted.The proposed approach highly accurately determines transition peak positions and enables the calculation of the energy band diagram,transition energies,relaxation rates,and gain estimation.It has achieved a remarkably low 5%error compared to the commonly used method,which typically results in a 25%error,and allowed to recover the superlattice parameters.The retrieved intrinsic parameters of the samples aligned with XRD data and growth parameters.The proposed method also accurately predicted the escape of the second energy level for quantum well thicknesses less than 5 nm,as was observed in photoreflectance experiments.The new designs of THz light-emitting devices operating at room temperature were suggested by the developed method.

Dual strategy of modulating growth temperature and inserting ultrathin barrier to enhance the wave function overlap in type-Ⅱ superlattices

Maximizing wave function overlap(WFO)within type-II superlattices(T2SL)is demonstrated to be important for improving their photoelectric properties,such as optical transition strength and quantum efficiency,which,however,remains a great challenge for now.Herein,the dual strategy of modulating growth temperature and inserting ultrathin AlAs barrier into the AlSb layers is presented to enhance the WFO in InAs/AlSb T2SL.The charge distributions and strain states indicate that moderate growth temperature of 470°C promotes the As-Sb exchange at AlSb-on-InAs(AOI)interfaces,which would introduce skew of energy band structure towards InAs-on-AlSb(IOA)interface.Such band structure could drive electrons and holes to the IOA interfaces simultaneously,thus resulting in the enhanced WFO.On this basis,insertion of relatively thick(0.3 nm)AlAs layers is found to squeeze more holes towards adjacent interfaces,boosting the WFO further.The InAs/AlSb superlattices with optimized WFO reveal better optical performance,where the peak intensity shows 50%improvement in the PL spectra than the original one.Moreover,a dual-miniband radiative transition mechanism appears in the InAs/AlSb superlattice with relatively thick AlAs intercalation,which helps broaden the wavelength range of the superlattice.

血管紧张素Ⅱ对大鼠骨髓间充质干细胞棕色脂肪变的抑制作用

背景:骨髓间充质干细胞是脂肪细胞的来源之一,且表达所有肾素血管紧张素系统成分,但血清血管紧张素Ⅱ对骨髓间充质干细胞向棕色脂肪组织分化的影响尚不清楚。目的:观察血管紧张素Ⅱ对骨髓间充质干细胞向棕色脂肪细胞分化的影响,并探究血管紧张素1a型受体敲除对血管紧张素Ⅱ影响骨髓间充质干细胞向棕色脂肪细胞分化的作用及可能机制。方法:分离培养野生型SD大鼠及血管紧张素1a型受体敲除SD大鼠的骨髓间充质干细胞,将其培养至第3代,随机分为4组:野生组,基因敲除组,野生+血管紧张素Ⅱ组,基因敲除+血管紧张素Ⅱ组,在棕色脂肪诱导分化培养基中诱导分化14 d,后2组在每次更换分化培养基的同时加入100 nmol/L血管紧张素Ⅱ进行干预。采用Western blot、qRT-PCR、免疫荧光等方法检测棕色脂肪诱导分化、脂肪分解、β氧化和线粒体生物发生等相关标记物的表达。结果与结论:血管紧张素Ⅱ可抑制骨髓间充质干细胞向棕色脂肪细胞分化,敲除血管紧张素1a型受体基因能够通过促进脂肪分解、增强脂肪酸β氧化、促进线粒体生物发生、增强线粒体功能来改善血管紧张素Ⅱ对骨髓间充质干细胞向棕色脂肪细胞分化的抑制作用。这些发现为肥胖治疗提供了新的研究方向和潜在治疗靶点,揭示了肾素血管紧张素系统在脂肪代谢中的重要作用及其作为治疗目标的潜力。

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-Ⅱ In As/GaSb superlattice

A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.

Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb_(2)Te_(3)–GeTe superlattices

Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together,we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb_(2)Te_(3)-GeTe superlattices.Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric,shift and injection currents contribute to the THz generation in Sb_(2)Te_(3)-GeTe superlattices.By decreasing the thickness and increasing the number of GeTe and Sb_(2)Te_(3) layer,the interlayer coupling can be enhanced,which significantly reduces the contribution from circular photo-galvanic effect(CPGE).A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of~1100 nm to~1400 nm further demonstrates a gapped state resulting from the interlayer coupling.These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.

基于Cre-loxP重组酶系统构建肺泡Ⅱ型上皮细胞特异性敲除SENP1基因小鼠

背景:前期在体外成功构建了SENP1基因沉默的人肺泡上皮细胞系,在细胞水平上研究了SENP1在高氧性肺损伤中的作用。目的:基于Cre-loxP重组酶系统构建肺泡Ⅱ型上皮细胞特异性敲除SENP1基因小鼠模型。方法:将SENP1^(flox/-)小鼠自交得到SENP1^(flox/flox)和SENP1^(flox/-)小鼠;将Sftpc-Cre^(+/+)小鼠与野生型小鼠交配获得更多的Sftpc-Cre^(+/-)小鼠。将Sftpc-Cre^(+/+)或子代Sftpc-Cre^(+/-)小鼠与SENP1^(flox/-)或子代SENP1^(flox/flox)小鼠进行杂交,获得SENP1^(flox/-)Sftpc-Cre^(+/-)双杂合小鼠。将SENP1^(flox/-)Sftpc-Cre^(+/-)小鼠与SENP1^(flox/flox)小鼠杂交,获得SENP1^(flox/flox)Sftpc-Cre^(+/-)小鼠。剪鼠尾提取基因组DNA,行PCR扩增,扩增产物经琼脂糖凝胶电泳确定小鼠基因型。取SENP1^(flox/flox)和SENP1^(flox/flox)Sftpc-Cre^(+/-)小鼠肺组织行免疫荧光双标实验及Western blot以验证SENP1敲除效果;取SENP1^(flox/flox)和SENP1^(flox/flox)Sftpc-Cre^(+/-)小鼠心、肝、肺、肾组织行苏木精-伊红染色以观察两组小鼠各脏器的组织形态。结果与结论:琼脂糖凝胶电泳正确筛选出SENP1^(flox/flox)Sftpc-Cre^(+/-)小鼠。免疫荧光双标实验显示,与SENP1^(flox/flox)小鼠相比,SENP1^(flox/flox)Sftpc-Cre^(+/-)小鼠肺组织中SENP1的平均荧光强度降低(P<0.01),且SENP1和Sftpc未见明显共定位(P<0.01)。Western blot结果显示,与SENP1^(flox/flox)小鼠相比,SENP1^(flox/flox)Sftpc-Cre^(+/-)小鼠肺组织中SENP1蛋白表达降低(P<0.001)。苏木精-伊红染色结果显示SENP1^(flox/flox)和SENP1^(flox/flox)Sftpc-Cre^(+/-)小鼠的心、肝、肺和肾脏组织形态无明显改变。该研究利用Cre-loxP重组酶系统成功构建了肺泡Ⅱ型上皮细胞特异性敲除SENP1基因小鼠,为后续研究SENP1基因在以肺泡Ⅱ型上皮细胞为主要损伤细胞的肺疾病如支气管肺发育不良、特发性肺纤维化中的作用提供了良好的工具。

芍药苷对血管紧张素Ⅱ诱导心肌成纤维细胞纤维化的保护作用

背景:研究表明芍药苷对肝、肾等器官纤维化具有改善作用,尤其是在肝纤维化中表现出突出优势,但芍药苷对于血管紧张素Ⅱ诱导的心肌纤维化的保护作用尚不明确。目的:探讨芍药苷对血管紧张素Ⅱ诱导的心肌成纤维细胞的保护作用及分子机制。方法:在分离培养的SD大鼠乳鼠心肌成纤维细胞中加入血管紧张素Ⅱ(1μmol/L)干预48 h作为模型组;芍药苷低、高剂量组给予不同剂量的芍药苷(50,100μmol/L)预处理2 h,再用血管紧张素Ⅱ处理48 h;SIRT1抑制剂组先用10μmol/L SIRT1抑制剂EX527处理2 h,再用100μmol/L芍药苷处理2 h,最后用血管紧张素Ⅱ处理48 h。采用CCK-8法检测细胞活力,Transwell检测细胞迁移能力,用DHA荧光探针检测细胞内活性氧水平,用试剂盒检测氧化应激标志物水平,Western blot检测纤维化相关基因的蛋白表达,qRT-PCR检测细胞外基质和纤维化相关基因的mRNA表达。结果与结论:①与对照组相比,血管紧张素Ⅱ干预后心肌成纤维细胞的增殖、迁移能力明显提高,细胞内活性氧和丙二醛水平升高,超氧化物歧化酶和过氧化氢酶活性降低,α-平滑肌肌动蛋白、Ⅰ型胶原蛋白、Ⅲ型胶原蛋白、纤维连接蛋白、结缔组织生长因子、基质金属蛋白酶9的mRNA表达增加;与模型组相比,芍药苷剂量依赖性抑制上述效应改变(P<0.01);②与模型组相比,芍药苷剂量依赖性上调SIRT1的蛋白表达(P<0.001);③与芍药苷高剂量组相比,SIRT1抑制剂组细胞迁移数量、α-平滑肌肌动蛋白、Ⅰ型胶原蛋白、Ⅲ型胶原蛋白表达水平显著增加(P<0.01)。结果表明,芍药苷可能通过上调SIRT1的表达,有效减轻了血管紧张素Ⅱ诱导的心肌成纤维细胞纤维化改变,剂量依赖性地抑制了心肌成纤维细胞氧化应激和细胞外基质沉积,对于心肌成纤维细胞纤维化具有保护作用。

Long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber

We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8.48μm and the peak photoresponse wavelength is 7.78μm.The peak responsivity is 0.93 A/W and the detectivity D*is 1.12×10^(11)cm·Hz0.5/W for 7.78μm at-0.20 V.The detector can operate up to about 260 K.At 260 K,the 50%cutoff wavelength is 11.52μm,the peak responsivity is 0.78 A/W and the D*is 5.02×10^(8)cm·Hz0.5/W for the peak wavelength of 10.39μm at-2.75 V.The dark current of the device is dominated by the diffusion current under both a small bias voltage of-0.2 V and a large one of-2.75 V for the temperature range of 120 to 260 K.

Amplatzer动脉导管封堵器-Ⅱ治疗伴发主动脉窦脱垂室间隔缺损患儿效果分析

目的探讨Amplatzer动脉导管封堵器(ADO)-Ⅱ治疗伴发主动脉窦脱垂室间隔缺损(VSD)患儿的效果。方法回顾性收集2018年1月至2022年9月于湖南省儿童医院住院治疗的94例伴发主动脉窦脱垂VSD患儿临床资料。其中男60例,女34例,年龄为(4.7±3.1)岁;主动脉窦轻中度脱垂83例,VSD为(4.12±0.97)mm,重度脱垂11例,VSD为(4.95±0.51)mm;VSD类型为膜周部54例,嵴内以上40例。分析VSD大小、主动脉窦脱垂程度与ADO-Ⅱ选择的关系,以及术后中期主动脉瓣反流、残余漏变化,明确ADO-Ⅱ对此类患儿的适用性。结果术后中期最终存留主动脉瓣轻度反流6例,多发于使用4-4 mm、5-4 mm型ADO-Ⅱ封堵器;残余漏10例,主要发生于使用5-4 mm、6-4 mm型封堵器。结论ADO-Ⅱ封堵器在置入形态良好状况下,适用于VSD<6 mm伴主动脉窦脱垂患儿。术后有一定的残余漏和主动脉脉瓣反流发生,但能满足介入治疗要求。

基于改进NSGA-Ⅱ算法的间歇采油制度优化

对于低渗透率油井,采用间歇采油制度能有效避免空抽磨损,并减少电能消耗量。为此通过分析沉没度和地层流压随抽油机井生产时间变化的规律,从系统节能的角度出发,建立以采油总产量最大、能耗最低为目标的间歇采油制度多目标优化模型。引入NSGA-Ⅱ并改进该算法对间歇采油制度多目标优化模型求解,运用改进算法得到的Pareto最优解的多样性和收敛性,合理优化抽油机的最优停机时间,最大效率地提升采油效率的同时,最小化电能消耗量。试验结果表明,基于Pareto多目标遗传算法的间歇采油机制优化具有明显的优势,在优化系统效率的同时能够有效减少电能消耗。研究结果可为油井间歇采油机制的改进和优化提供有力的技术支持。

基于改进NSGA-Ⅱ的纤维缠绕落纱点轨迹采样特征权重优化

针对基于空间特征曲线特征函数的纤维缠绕落纱点轨迹采样算法无法自动选择特征权重的问题,建立以特征权重为变量,以得到采样点线性插值生成曲线与原曲线的MAE,RMSE为目标函数的双目标优化模型。提出基于改进NSGA-Ⅱ算法的双目标优化求解方法以优化特征权重。实例验证表明,与传统NSGA-Ⅱ算法相比,改进NSGA-Ⅱ算法求得Pareto解集的MAE,RMSE平均下降了0.002和0.105,算法选取特征权重的MAE,RMSE比特征权重为(0.1,0.3)的MAE,RMSE分别降低了约12.9%和8.5%,比特征权重为(0.9,0.1)的MAE,RMSE分别降低了约20.6%和11.4%,有效地提高了落纱点轨迹采样的精度。