Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported ...Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth.The lattice strain energy △G and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously.△G is the function of the alloy composition,which is affected by flux ratio and growth temperature directly.The calculation results reveal that flux ratio and growth temperature mainly influence the growth process.Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.展开更多
Long-term societal prosperity depends on addressing the world’s energy and environmental problems,and photocatalysis has emerged as a viable remedy.Improving the efficiency of photocatalytic processes is fundamentall...Long-term societal prosperity depends on addressing the world’s energy and environmental problems,and photocatalysis has emerged as a viable remedy.Improving the efficiency of photocatalytic processes is fundamentally achieved by optimizing the effective utilization of solar energy and enhancing the efficient separation of photogenerated charges.It has been demonstrated that the fabrication ofⅢ–Ⅴsemiconductor-based photocatalysts is effective in increasing solar light absorption,long-term stability,large-scale production and promoting charge transfer.This focused review explores on the current developments inⅢ–Ⅴsemiconductor materials for solar-powered photocatalytic systems.The review explores on various subjects,including the advancement ofⅢ–Ⅴsemiconductors,photocatalytic mechanisms,and their uses in H2 conversion,CO_(2)reduction,environmental remediation,and photocatalytic oxidation and reduction reactions.In order to design heterostructures,the review delves into basic concepts including solar light absorption and effective charge separation.It also highlights significant advancements in green energy systems for water splitting,emphasizing the significance of establishing eco-friendly systems for CO_(2)reduction and hydrogen production.The main purpose is to produce hydrogen through sustainable and ecologically friendly energy conversion.The review intends to foster the development of greener and more sustainable energy source by encouraging researchers and developers to focus on practical applications and advancements in solar-powered photocatalysis.展开更多
Under different pH conditions,the trace concentrations of total arsenic and arsenite in synthesized waster-water samples were determined by hydride generation coupled with atomic absorption spectrometer(HG-AAS).The li...Under different pH conditions,the trace concentrations of total arsenic and arsenite in synthesized waster-water samples were determined by hydride generation coupled with atomic absorption spectrometer(HG-AAS).The limit detection of total arsenic and arsenite were 0.067μg/L and 0.395μg/L,and Beer’s law was obeyed in a wide linear dynamic range of 0.067μg/L-20μg/L and 0.395μg/L-20μg/L respective.The recovery of total arsenic and arsenite was 97.7%-99.9% and 89.4%-106%,respectively.展开更多
基金Projects(06YFJZJC01100,08JCYBJC14800)supported by Applied Basic Study Foundation of Tianjin,ChinaProject(2006AA03Z413)supported by the Hi-tech Research and Development Program of China
文摘Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth.The lattice strain energy △G and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously.△G is the function of the alloy composition,which is affected by flux ratio and growth temperature directly.The calculation results reveal that flux ratio and growth temperature mainly influence the growth process.Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.
基金supported by the Nano&Material Technology Development Program through the National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(No.2022M3H4A1A04096380)and(No.2022M3H4A3A01082883)。
文摘Long-term societal prosperity depends on addressing the world’s energy and environmental problems,and photocatalysis has emerged as a viable remedy.Improving the efficiency of photocatalytic processes is fundamentally achieved by optimizing the effective utilization of solar energy and enhancing the efficient separation of photogenerated charges.It has been demonstrated that the fabrication ofⅢ–Ⅴsemiconductor-based photocatalysts is effective in increasing solar light absorption,long-term stability,large-scale production and promoting charge transfer.This focused review explores on the current developments inⅢ–Ⅴsemiconductor materials for solar-powered photocatalytic systems.The review explores on various subjects,including the advancement ofⅢ–Ⅴsemiconductors,photocatalytic mechanisms,and their uses in H2 conversion,CO_(2)reduction,environmental remediation,and photocatalytic oxidation and reduction reactions.In order to design heterostructures,the review delves into basic concepts including solar light absorption and effective charge separation.It also highlights significant advancements in green energy systems for water splitting,emphasizing the significance of establishing eco-friendly systems for CO_(2)reduction and hydrogen production.The main purpose is to produce hydrogen through sustainable and ecologically friendly energy conversion.The review intends to foster the development of greener and more sustainable energy source by encouraging researchers and developers to focus on practical applications and advancements in solar-powered photocatalysis.
文摘Under different pH conditions,the trace concentrations of total arsenic and arsenite in synthesized waster-water samples were determined by hydride generation coupled with atomic absorption spectrometer(HG-AAS).The limit detection of total arsenic and arsenite were 0.067μg/L and 0.395μg/L,and Beer’s law was obeyed in a wide linear dynamic range of 0.067μg/L-20μg/L and 0.395μg/L-20μg/L respective.The recovery of total arsenic and arsenite was 97.7%-99.9% and 89.4%-106%,respectively.
