Response of the low-pressure hot-filament discharge plasma to a positively biased auxiliary disk electrode

In a steady-state plasma,the loss rate of plasma particles to the chamber wall and surfaces in contact with plasma is balanced by the ionization rate of background neutrals in the hot-filament discharges.The balance between the loss rate and ionization rate of plasma particles(electrons and ions)maintains quasi-neutrality of the bulk plasma.In the presence of an external perturbation,it tries to retain its quasi-neutrality condition.In this work,we studied how the properties of bulk plasma are affected by an external DC potential perturbation.An auxiliary biased metal disk electrode was used to introduce a potential perturbation to the plasma medium.A single Langmuir probe and an emissive probe,placed in the line of the discharge axis,were used for the characterization of the bulk plasma.It is observed that only positive bias to the auxiliary metal disk increases the plasma potential,electron temperature,and plasma density but these plasma parameters remain unaltered when the disk is biased with a negative potential with respect to plasma potential.The observed plasma parameters for two different-sized,positively as well as negatively biased,metal disks are compared and found inconsistent with the existing theoretical model at large positive bias voltages.The role of the primary energetic electrons population in determining the plasma parameters is discussed.The experimentally observed results are qualitatively explained on the basis of electrostatic confinement arising due to the loss of electrons to a biased metal disk electrode.

Modeling and Prediction of Inter-System Bias for GPS/BDS-2/BDS-3 Combined Precision Point Positioning

The combination of Precision Point Positioning(PPP)with Multi-Global Navigation Satellite System(MultiGNSS),called MGPPP,can improve the positioning precision and shorten the convergence time more effectively than the combination of PPP with only the BeiDou Navigation Satellite System(BDS).However,the Inter-System Bias(ISB)measurement of Multi-GNSS,including the time system offset,the coordinate system difference,and the inter-system hardware delay bias,must be considered for Multi-GNSS data fusion processing.The detected ISB can be well modeled and predicted by using a quadratic model(QM),an autoregressive integrated moving average model(ARIMA),as well as the sliding window strategy(SW).In this study,the experimental results indicate that there is no apparent difference in the ISB between BDS-2 and BDS-3 observations if B1I/B3I signals are used.However,an obvious difference in ISB can be found between BDS-2 and BDS-3 observations if B1I/B3I and B1C/B2a signals are used.Meanwhile,the precision of the Predicted ISB(PISB)on the next day of all stations is about 0.1−0.6 ns.Besides,to effectively utilize the PISB,a new strategy for predicting the PISB for MGPPP is proposed.In the proposed strategy,the PISB is used by adding two virtual observation equations,and an adaptive factor is adopted to balance the contribution of the Observed ISB(OISB)and the PISB to the final estimations of ISB.To validate the effectiveness of the proposed method,some experimental schemes are designed and tested under different satellite availability conditions.The results indicate that in open sky environment,the selective utilization of the PISB achieves almost the same positioning precision of MGPPP as the direct utilization of the PISB,but the convergence time of MGPPP is reduced by 7.1%at most in the north(N),east(E),and up(U)components.In the blocked sky environment,the selective utilization of the PISB contributes to more significant improvement of the positioning precision and convergence time than that in the open sky environment.Compared with the direct utilization of the PISB,the selective utilization of the PISB improves the positioning precision and convergence time by 6.7%and 12.7%at most in the N,E,and U components,respectively.

On Positioning and Selection of Mediation and Judgment

The relationship between mediation and the judgment directly affect the practical effects of judicial power operation,and have important influence on judicial practice. Mediation and judgment have been contradicting each other for a long time,which is the result of the social situation,national policies and other factors intertwined. Practically the alienation of the relationship between mediation and judgment,such as phenomenon of attaching more importance to mediation and less importance to judgment,arbitrary application of mediation,as well as failure to give full play to the due function of mediation and judgment,have deep social reasons,and lead to certain degree of harm. Both mediation and judgment are important means to effectively resolve disputes,with functional complementation of mediation and judgment. Meanwhile judgment serves as an important guarantee for mediation to function. Therefore,to realize scientific selection based on combination of mediation and judgment,it must adhere to classification management over applicable scope of mediation and judgment,application conditions of mediation and judgment,timing of applying mediation and judgment,and supporting mechanismfor scientific selection of mediation and judgment.

Clock-based RAIM method and its application in GPS receiver positioning

Because the signals of global positioning system （GPS） satellites are susceptible to obstructions in urban environment with many high buildings around, the number of GPS useful satellites is usually less than six. In this case, the receiver autonomous integrity monitoring （RAIM） method earmot exclude faulty satellite. In order to improve the performance of RAIM method and obtain the reliable positioning results with five satellites, the series of receiver clock bias （RCB） is regarded as one useful satellite and used to aid RAIM method. From the point of nonlinear series, a grey-Markov model for predicting the RCB series based on grey theory and Markov chain is presented. And then the model is used for aiding RAIM method in order to exclude faulty satellite. Experimental results demonstrate that the prediction model is fit for predicting the RCB series, and with the clock-based RAIM method the faulty satellite can be correctly excluded and the positioning precision of GPS receiver can be improved for the case where there are only five useful satellites.

Energy distribution extraction of negative charges responsible for positive bias temperature instability

A new method is proposed to extract the energy distribution of negative charges, which results from electron trapping by traps in the gate stack of n MOSFET during positive bias temperature instability（PBTI） stress based on the recovery measurement. In our case, the extracted energy distribution of negative charges shows an obvious dependence on energy,and the energy level of the largest energy density of negative charges is 0.01 eV above the conduction band of silicon. The charge energy distribution below that energy level shows strong dependence on the stress voltage.

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.

Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-metal metal-oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction. The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the back-channel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device （L=2 μm）. It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region.

Influence of ultra-thin TiN thickness(1.4 nm and 2.4 nm) on positive bias temperature instability(PBTI)of high-k/metal gate nMOSFETs with gate-last process

The positive bias temperature instability（PBTI） degradations of high-k/metal gate（HK/MG） n MOSFETs with thin TiN capping layers（1.4 nm and 2.4 nm） are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI（90℃,125℃, 160℃） are studied and activation energy（Ea） values（0.13 eV and 0.15 eV） are extracted. Although the equivalent oxide thickness（EOT） values of two TiN thickness values are almost similar（0.85 nm and 0.87 nm）, the 2.4-nm TiN one（thicker Ti N capping layer） shows better PBTI reliability（13.41% at 0.9 V, 90℃, 1000 s）. This is due to the better interfacial layer/high-k（IL/HK） interface, and HK bulk states exhibited through extracting activation energy and trap energy distribution in the high-k layer.

Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric

Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. Well behaved split C-V characteristics with small capacitance frequency dispersion are confirmed after the insertion of the InCaP barrier layer. The direct-current Id-Vg measurements show both degradations of positive gate voltage shift and sub-threshold swing in the sub-threshold region, and degradation of positive △Vg in the oncurrent region. The Id-Vg degradation during the positive bias temperature instability tests is mainly contributed by the generation of near interface acceptor traps under stress. Specifically, the stress induced aeceptor traps contain both permanent and recoverable traps. Compared with surface channel InCaAs devices, stress induced recoverable donor traps are negligible in the buried channel ones.

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

The time and temperature dependence of threshold voltage shift under positive-bias stress（PBS） and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide（a-IGZO） thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.

Actions of negative bias temperature instability （NBTI） and hot carriers in ultra-deep submicron p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）

Hot carrier injection （HCI） at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability （NBTI） and hot carriers. Hot-carrier-stress-induced damage at Vg = Vd, where Vd is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different： the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）. We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.

Automatic Information Processing Bias to Stress Factors by Older Adults with and without Diabetes

A sample of 65 older adults (with and without diabetes) as well as a sample of 84 healthy young people were required to take affective priming studies to compare recognition latencies of stress related word pairs against recognition latencies of positive, negative and neutral word pairs. Moreover, older adults took a stress questionnaire related to relevant disturbing events in the third age. The goal was to test any automatic emotional processing bias to these events. Results suggested that even when people with diabetes obtained low stress test scores, they showed automatic cognitive bias to process stressful events differently than older adults without diabetes and young people. This suggested that people with diabetes patients’ controlled strategies to cope with stress might not be aware of such an automatic cognitive bias. It is argued that this information processing style to stressful events makes patients prone to cognitive emotional vulnerability.

高职大学生对不同网红职业模式认同的研究

采用访谈、问卷调查等方法探讨高职大学生对网红职业的认知。基于调查数据与资料将现有的网红职业模式分为目标型、条件型、理性型和分享型四种类型。高职大学生对网红职业的认知倾向,包括正向认知和偏差认知。高职大学生对不同网红职业模式认同的调查结果表明:高职大学生对网红职业模式的认同存在性别差异,性别差异与正向认知、偏差认知相关。文章提出优化职业指导相关课程、提供个性化职业发展规划等对策建议,以引导高职大学生做好职业规划、提升职业能力。

基于推进器偏置的半潜式平台动力定位模型试验研究

半潜式平台在进行动力定位作业时,由于其水线面面积较小而初稳性高较低,其垂向运动(横摇、纵摇、垂荡)易受到推进器法向力作用的影响。基于此,提出一种基于推进器偏置的推力分配模式,旨在合理利用推进器的法向力抑制平台垂向运动,而不影响平台水平面定位功能。在海洋工程水池开展半潜式平台的动力定位模型试验,对比和分析不同载荷工况及推进器偏置模式下平台的六自由度运动响应。结果表明,推进器偏置策略能够基本保证水平面定位精度,并显著减小平台垂向运动在其固有频率附近的响应幅值,在该试验工况下,功率谱密度(PSD)峰值减小高达54.7%,对波频区间的运动影响则较小。该研究结果可为半潜平台垂向运动抑制提供新思路。

Relative position determination of a lunar rover using the biased differential phase delay of same-beam VLBI

When only data transmission signals with a bandwidth of 1 MHz exist in the rover, the position can be obtained using the differential group delay data of the same-beam very long baseline interferometry (VLBI). The relative position between a lunar rover and a lander can be determined with an error of several hundreds of meters. When the guidance information of the rover is used to determine relative position, the rover's wheel skid behavior and integral movement may influence the accuracy of the determined position. This paper proposes a new method for accurately determining relative position. The differential group delay and biased differential phase delay are obtained from the same-beam VLBI observation, while the modified biased differential phase delay is obtained using the statistic mean value of the differential group delay and the biased phase delay as basis. The small bias in the modified biased phase delay is estimated together with other parameters when the relative position of the rover is calculated. The effectiveness of the proposed method is confirmed using the same-beam VLBI observation data of SELENE. The radio sources onboard the rover and the lander are designed for same-beam VLBI observations. The results of the simulations of the differential delay of the same-beam VLBI observation between the rover and the lander show that the differential delay is sensitive to relative position. An approach to solving the relative position and a strategy for tracking are also introduced. When the lunar topography data near the rover are used and the observations are scheduled properly, the determined relative position of the rover may be nearly as accurate as that solved using differential phase delay data.

一种24~27 GHz共源共栅高增益低噪声放大器设计

基于40 nm CMOS工艺,设计了一款高增益的低噪声放大器芯片。该芯片的拓扑架构采用了变压器输入匹配技术和正反馈同相放大技术,以提高输入匹配程度和增益。通过在传统共源共栅结构的输入级引入有源偏置网络及变压器匹配网络,实现的芯片在仿真环境下不仅能够在常温条件下稳定工作,还展现出-40℃~125℃范围内的优越性能。因此,该设计可用于不同温度环境下毫米波频段的收发机接收端口,并且有着一定的温度稳定特性。该低噪声放大器芯片的版图尺寸为0.383 mm×0.694 mm。版图后仿真结果显示,在24~27 GHz的工作频段内,该低噪声放大器常温下实现了低于4.96 d B的噪声系数、18.11 d B的最大增益、小于-16.08 d B的输入回波损耗和小于-11.54 d B的输出回波损耗。此外,该低噪声放大器设计还具有输入P_(1dB)为-20.36 d Bm、直流功耗P_(diss)为12.8 m W等优异指标。

Functional model modification of precise point positioning considering the time-varying code biases of a receiver

Precise Point Positioning(PPP),initially developed for the analysis of the Global Positing System(GPS)data from a large geodetic network,gradually becomes an effective tool for positioning,timing,remote sensing of atmospheric water vapor,and monitoring of Earth’s ionospheric Total Electron Content(TEC).The previous studies implicitly assumed that the receiver code biases stay constant over time in formulating the functional model of PPP.In this contribution,it is shown this assumption is not always valid and can lead to the degradation of PPP performance,especially for Slant TEC(STEC)retrieval and timing.For this reason,the PPP functional model is modified by taking into account the time-varying receiver code biases of the two frequencies.It is different from the Modified Carrier-to-Code Leveling(MCCL)method which can only obtain the variations of Receiver Differential Code Biases(RDCBs),i.e.,the difference between the two frequencies’code biases.In the Modified PPP(MPPP)model,the temporal variations of the receiver code biases become estimable and their adverse impacts on PPP parameters,such as ambiguity parameters,receiver clock offsets,and ionospheric delays,are mitigated.This is confirmed by undertaking numerical tests based on the real dual-frequency GPS data from a set of global continuously operating reference stations.The results imply that the variations of receiver code biases exhibit a correlation with the ambient temperature.With the modified functional model,an improvement by 42%to 96%is achieved in the Differences of STEC(DSTEC)compared to the original PPP model with regard to the reference values of those derived from the Geometry-Free(GF)carrier phase observations.The medium and long term(1×10^(4) to 1.5×10^(4) s)frequency stability of receiver clocks are also signifi-cantly improved.

基于转子极性判断优化的脉振高频电压注入法

在永磁同步电机零速和低速运行时,采用脉振高频注入法能够准确估计转子位置信息。针对脉振高频注入法无法实现转子极性判断,而传统极性判断方法存在响应时间长、采样和实施过程复杂以及极性误判等问题。文中提出了一种基于正负电压脉冲注入的电机转子极性判断方法。该方法给电机注入正负电压脉冲,并根据对应脉冲的响应电流峰值判断转子极性。脉振高频注入法将转子位置估计值和极性判断结果相结合,可得到准确的转子初始位置。文中通过Simulink仿真验证算法的有效性。仿真结果表明,所提转子极性判断方法能够简化采样方式和算法复杂性,降低判断转子极性的响应时间,使脉振高频注入法能够准确和快速地估计转子初始位置。

行政诉讼恢复效力判决的反思与修正

恢复效力判决由我国司法解释所创,但目前该判决类型尚无法对应我国《行政诉讼法》规定的既有判决方式。在司法解释中,恢复效力判决与责令重作复议决定判决被置于同一条款且二者的适用条件未被严格区分。当复议改变决定实质违法、达到可撤销程度且已消灭原行政行为的效力,同时满足原行政行为合法或虽违法但须保留效力的条件的,才有适用恢复效力判决的余地。作为积极形成类判决,恢复效力判决与尊重行政首次判断权原则存在某种冲突,但引入“裁量权缩减至零”作为隐含适用条件,可有效缓和上述紧张关系。尽管在法律规范层面,恢复效力判决已构成诉外裁判,但我国尚无禁止诉外裁判的原则性规定,且在具体条款中兼有隐含禁止或允许诉外裁判理念的实例。实质性化解行政争议、为原告提供更彻底的保护是此种判决方式被允许诉外裁判的正当性基础。未来应从以下方面对恢复效力判决进行修正:细化该判决与责令重作复议决定判决的区分适用情形、引入“裁量权缩减至零”的隐含条件、为人民法院增设通知受原行政行为不利影响的当事人作为第三人参加诉讼的义务。

北斗三号PPP-B2b差分码偏差对UPPP解算的影响

通过北斗三号精密单点定位服务信号(Precise Point Positioning B2b,PPP-B2b)差分码偏差(Differential Code Biases,DCB)对实时非组合精密单点定位(Uncombined Precise Point Positioning,UPPP)解算参数的影响进行研究。基于PPP-B2b服务的UPPP模型,分析了DCB对UPPP定位、收敛时间、对流层、钟差及斜向电离层解算的影响。在非组合模型下,采用北斗三号PPP-B2b实时精密单点定位(Real-Time Precise Point Positioning B2b,RTPPP-B2b)软件对接收机实测数据进行实验分析。实验结果表明:载波与伪距观测值权比为103∶1时,DCB对定位精度和收敛时间影响均较小,载波与伪距观测值权比为102∶1时,无DCB校正的UPPP定位误差收敛时间会变长;DCB对解算对流层天顶总延迟的影响可以忽略,对接收机钟差影响在亚纳秒级别;在使用UPPP提取斜向电离层过程中,DCB主要影响斜向电离层的计算精度。