Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscalin...Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.展开更多
With the pretreatment of pyrolysis, the uniform, smooth, dense and crack free Gd2O3∶Eu3+ films were obtained by sol-gel process without shielding atmosphere. Atomic force microscopy （AFM）, X-ray diffraction （XRD）...With the pretreatment of pyrolysis, the uniform, smooth, dense and crack free Gd2O3∶Eu3+ films were obtained by sol-gel process without shielding atmosphere. Atomic force microscopy （AFM）, X-ray diffraction （XRD）, Ellipsometry, transmission, photoluminescence and X-ray excited emission were applied to study to the surface morphology, structure, thickness and optical properties of the films. The results show that the films are made up of grains with cubic structure in average size about 22 nm. With 21 times reproducible spin coating and pyrolysis treatment, the thickness of the film could reach to 792 nm and the transmittance of the film in visible region is above 90%. Two peaks at 223 and 250 nm are found in excitation spectra, which correspond to host lattice （HL） excitation and charge transfer （CT） excitation, respectively. Meanwhile, the main peak relates to HL excitation which is contrary to that of Gd2O3∶Eu3+ powder. This phenomenon will be beneficial to radioluminescence. The emission spectra show that the main peak located at 611 nm could be excited either by UV or X-ray, which correspond to （（）7F2→（）5D0） transition in Eu3+ ions. The luminescence intensity at 10 ms is only 10-4 time of that at 10 μs, which means that the afterglow in Gd2O3∶Eu3+ films is insignificant for X-ray imaging.展开更多
基金financially supported by the National Key R&D Program of China (No. 2018YFB1502203-1)the Guangdong Basic and Applied Basic Research Foundation (No. 2021B1515120087)the Stable Supporting Fund of Shenzhen, China (No. GXWD20201230155427003-202007 28114835006)
文摘Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.
文摘With the pretreatment of pyrolysis, the uniform, smooth, dense and crack free Gd2O3∶Eu3+ films were obtained by sol-gel process without shielding atmosphere. Atomic force microscopy （AFM）, X-ray diffraction （XRD）, Ellipsometry, transmission, photoluminescence and X-ray excited emission were applied to study to the surface morphology, structure, thickness and optical properties of the films. The results show that the films are made up of grains with cubic structure in average size about 22 nm. With 21 times reproducible spin coating and pyrolysis treatment, the thickness of the film could reach to 792 nm and the transmittance of the film in visible region is above 90%. Two peaks at 223 and 250 nm are found in excitation spectra, which correspond to host lattice （HL） excitation and charge transfer （CT） excitation, respectively. Meanwhile, the main peak relates to HL excitation which is contrary to that of Gd2O3∶Eu3+ powder. This phenomenon will be beneficial to radioluminescence. The emission spectra show that the main peak located at 611 nm could be excited either by UV or X-ray, which correspond to （（）7F2→（）5D0） transition in Eu3+ ions. The luminescence intensity at 10 ms is only 10-4 time of that at 10 μs, which means that the afterglow in Gd2O3∶Eu3+ films is insignificant for X-ray imaging.
