Nanocrystalline MTiO3 （M = St, Pb, Co） were prepared by a general self-pro- pagating combustion method. The samples were characterized by X-ray diffraction （XRD） analysis, scanning electron microscopy （SEM）, tra...Nanocrystalline MTiO3 （M = St, Pb, Co） were prepared by a general self-pro- pagating combustion method. The samples were characterized by X-ray diffraction （XRD） analysis, scanning electron microscopy （SEM）, transmission electron microscopy （TEM）, N2 adsorption and UV-vis diffuse reflectance spectra （DRS）. The photocatalytic activity of MTiO3 （M = Sr, Pb, Co） was evaluated by the photocatalytic degradation of methyl orange （MO）. MTiO3 （M = Sr, Pb, Co） having the same core element showed distinctly different photocatalytic activity due to the different coordinating atoms. Factors affecting the photocatalytic activity of MTiO3 （M = Sr, Pb, Co） were discussed. It was suggested that the structures of TiO6 octahedra and the electronic property were the predominant factors of the photocatalytic behavior for MTiO3 （M = Sr, Pb, Co）.展开更多
（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental r...（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P, remnant polarization Pr and coercive field E were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm （the coercive voltage is 0.7 V）, respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories （NvFeRAMs）.展开更多
(Pb,Sr)TiO3 （PST） thin film are fabricated by RF magnetron sputtering on Si-buffered Pt/Ti/SiO2/Si substrates with different buffer layer deposition time. Surface morphologies of the buffer layer indicate an improvi...(Pb,Sr)TiO3 （PST） thin film are fabricated by RF magnetron sputtering on Si-buffered Pt/Ti/SiO2/Si substrates with different buffer layer deposition time. Surface morphologies of the buffer layer indicate an improving surface roughness and larger grains with the prolongation of sputtering time. Deposition of PST thin films shows excellent surface fluctuation filling ability to improve the surface roughness of substrates. PST surface morphologies exhibit apparently different grain forms according to the preparation time durance of buffer layer.展开更多
基金financially supported by the Educational Commission of Fujian Province(No. JB11005)Fund for Fostering Excellent Young Key Teachers of Fujian Normal University (fjsdjk2012067)
文摘Nanocrystalline MTiO3 （M = St, Pb, Co） were prepared by a general self-pro- pagating combustion method. The samples were characterized by X-ray diffraction （XRD） analysis, scanning electron microscopy （SEM）, transmission electron microscopy （TEM）, N2 adsorption and UV-vis diffuse reflectance spectra （DRS）. The photocatalytic activity of MTiO3 （M = Sr, Pb, Co） was evaluated by the photocatalytic degradation of methyl orange （MO）. MTiO3 （M = Sr, Pb, Co） having the same core element showed distinctly different photocatalytic activity due to the different coordinating atoms. Factors affecting the photocatalytic activity of MTiO3 （M = Sr, Pb, Co） were discussed. It was suggested that the structures of TiO6 octahedra and the electronic property were the predominant factors of the photocatalytic behavior for MTiO3 （M = Sr, Pb, Co）.
基金the National Natural Science Foundation of China(No.60571009)
文摘（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P, remnant polarization Pr and coercive field E were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm （the coercive voltage is 0.7 V）, respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories （NvFeRAMs）.
文摘(Pb,Sr)TiO3 （PST） thin film are fabricated by RF magnetron sputtering on Si-buffered Pt/Ti/SiO2/Si substrates with different buffer layer deposition time. Surface morphologies of the buffer layer indicate an improving surface roughness and larger grains with the prolongation of sputtering time. Deposition of PST thin films shows excellent surface fluctuation filling ability to improve the surface roughness of substrates. PST surface morphologies exhibit apparently different grain forms according to the preparation time durance of buffer layer.
