Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the st...Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the stoichiometry on microstructure, grain growth, dielectric and tunable properties of BST thin films were investigated. TiO2 and (Ba,Sr)2TiO4 were found as a second phase at the ratios of 0.76 and 1.33, respectively. The variation of the ratio reveals more significant effect on the grain size in B-site rich samples than that in A-site rich samples. The dissipation factor decreases rapidly from 0.1 to 0.01 at 1 MHz with decreasing (Ba+Sr)/Ti ratio. The tunability increases with decreasing ratio from 1.33 to 1.05, and then decreases with decreasing ratio from 1.05 to 0.76. The film with (Ba+Sr)/Ti ratio of 1.05 has a maximum tunability of 32% and a dissipation factor of 0.03 at 1 MHz.展开更多
采用溶胶凝胶法制备x Mn-Ba0.2Sr0.8Zr0.18Ti0.82O3(BSZT)(x=0mol%、1mol%、2mol%、3mol%)的陶瓷粉末,以传统工艺制备Mn离子掺杂的BSZT陶瓷。研究Mn离子掺杂浓度对BSZT陶瓷烧结特性、物相结构、介电性能、击穿场强以及储能密度的影响。...采用溶胶凝胶法制备x Mn-Ba0.2Sr0.8Zr0.18Ti0.82O3(BSZT)(x=0mol%、1mol%、2mol%、3mol%)的陶瓷粉末,以传统工艺制备Mn离子掺杂的BSZT陶瓷。研究Mn离子掺杂浓度对BSZT陶瓷烧结特性、物相结构、介电性能、击穿场强以及储能密度的影响。结果表明,Mn离子掺杂降低了BSZT陶瓷的烧结温度,同时降低其介电常数以及介电损耗,提高了击穿场强和储能密度。在1400℃下烧结的2mol%Mn离子掺杂BSZT陶瓷较未掺杂BSZT陶瓷的烧结温度降低了100℃,相对密度为96.3%;1 k Hz处介电常数约为497、介电损耗为0.36%;最大击穿场强为12.595 k V/mm;最大储能密度为0.374 J/cm3。展开更多
本文采用溶胶-凝胶法制备Ba_xSr_(1-x)Zr_(0.18)Ti_(0.82)O_3(x=0.3,0.4,0.5)陶瓷粉末,通过传统的陶瓷制备方法制备陶瓷样品,研究了不同Ba/Sr比对陶瓷结构及充放电性能的影响。研究结果显示,随着Ba/Sr的增加,陶瓷的介电常数变大,居里温...本文采用溶胶-凝胶法制备Ba_xSr_(1-x)Zr_(0.18)Ti_(0.82)O_3(x=0.3,0.4,0.5)陶瓷粉末,通过传统的陶瓷制备方法制备陶瓷样品,研究了不同Ba/Sr比对陶瓷结构及充放电性能的影响。研究结果显示,随着Ba/Sr的增加,陶瓷的介电常数变大,居里温度向高温方向移动,介电性由线性向非线性演变;室温下,Ba_(0.5)Sr_(0.5)Zr_(0.18)Ti_(0.82)O_3陶瓷有最大的介电常数(~2250,0.004,1 k Hz),最大的饱和极化(~10.8μC/cm^2,110 k V/cm),最大的能量密度(~0.42 J/cm^3,110 k V/cm),其放电效率也达到93%。展开更多
Ba0.6Sr0.4TiO3 thin films doped with K were deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Bao.6Sro.4Ti...Ba0.6Sr0.4TiO3 thin films doped with K were deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Bao.6Sro.4TiO3 thin films have been studied in detail. The K content in Ba0.6Sro.4TiO3 thin films has a strong influence on the material＇s properties including surface morphology and the dielectric and tunable properties. It was found that the Curie temperature of K-doped Bao.6Sr0.4TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films, which leads to a dielectric enhancement of K-doped Ba0.6Sr0.4TiO3 films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.展开更多
采用分步沉积法制备不同Sr/Ti摩尔比例的Sr/Ti O2催化剂,以X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、傅里叶变换红外(FT-IR)光谱、紫外-可见漫反射光谱(UV-Vis RDS)等手段对样品进行了表征,以可见光催化降解亚甲基蓝为模型反应...采用分步沉积法制备不同Sr/Ti摩尔比例的Sr/Ti O2催化剂,以X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、傅里叶变换红外(FT-IR)光谱、紫外-可见漫反射光谱(UV-Vis RDS)等手段对样品进行了表征,以可见光催化降解亚甲基蓝为模型反应考察样品光催化活性.结果表明,催化剂的活性和结构随Sr/Ti摩尔比(n(Sr)/n(Ti))的变化而变化,当n(Sr)/n(Ti)≤3/2时,催化剂呈由Ti O2和Sr Ti O3组成的球状结构;而当n(Sr)/n(Ti)在3/2与4/1之间时,催化剂呈片状结构,且随着n(Sr)/n(Ti)增大,催化剂组成由Sr Ti O3和Sr2Ti O4变为Sr2Ti O4和Sr(OH)2H2O;当n(Sr)/n(Ti)=9/1时,催化剂呈以Sr(OH)2H2O为主的针状结构.其中,n(Sr)/n(Ti)=4/1的样品表现出最高的光催化活性,一级反应速率为Sr Ti O3钙钛矿催化剂的5.0倍,商用P25的86.7倍.展开更多
基金Project (50332030) supported by the National Natural Science Foundation of China
文摘Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the stoichiometry on microstructure, grain growth, dielectric and tunable properties of BST thin films were investigated. TiO2 and (Ba,Sr)2TiO4 were found as a second phase at the ratios of 0.76 and 1.33, respectively. The variation of the ratio reveals more significant effect on the grain size in B-site rich samples than that in A-site rich samples. The dissipation factor decreases rapidly from 0.1 to 0.01 at 1 MHz with decreasing (Ba+Sr)/Ti ratio. The tunability increases with decreasing ratio from 1.33 to 1.05, and then decreases with decreasing ratio from 1.05 to 0.76. The film with (Ba+Sr)/Ti ratio of 1.05 has a maximum tunability of 32% and a dissipation factor of 0.03 at 1 MHz.
文摘采用溶胶凝胶法制备x Mn-Ba0.2Sr0.8Zr0.18Ti0.82O3(BSZT)(x=0mol%、1mol%、2mol%、3mol%)的陶瓷粉末,以传统工艺制备Mn离子掺杂的BSZT陶瓷。研究Mn离子掺杂浓度对BSZT陶瓷烧结特性、物相结构、介电性能、击穿场强以及储能密度的影响。结果表明,Mn离子掺杂降低了BSZT陶瓷的烧结温度,同时降低其介电常数以及介电损耗,提高了击穿场强和储能密度。在1400℃下烧结的2mol%Mn离子掺杂BSZT陶瓷较未掺杂BSZT陶瓷的烧结温度降低了100℃,相对密度为96.3%;1 k Hz处介电常数约为497、介电损耗为0.36%;最大击穿场强为12.595 k V/mm;最大储能密度为0.374 J/cm3。
文摘本文采用溶胶-凝胶法制备Ba_xSr_(1-x)Zr_(0.18)Ti_(0.82)O_3(x=0.3,0.4,0.5)陶瓷粉末,通过传统的陶瓷制备方法制备陶瓷样品,研究了不同Ba/Sr比对陶瓷结构及充放电性能的影响。研究结果显示,随着Ba/Sr的增加,陶瓷的介电常数变大,居里温度向高温方向移动,介电性由线性向非线性演变;室温下,Ba_(0.5)Sr_(0.5)Zr_(0.18)Ti_(0.82)O_3陶瓷有最大的介电常数(~2250,0.004,1 k Hz),最大的饱和极化(~10.8μC/cm^2,110 k V/cm),最大的能量密度(~0.42 J/cm^3,110 k V/cm),其放电效率也达到93%。
基金Project supported by the National Natural Science Foundation of China （Grant Nos. 10874051 and 50802096） and the Innovation Project for Young Talents of Hefei Institutes of Physical Science, Chinese Academy of Sciences （Grant No. O84N391123）.
文摘Ba0.6Sr0.4TiO3 thin films doped with K were deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Bao.6Sro.4TiO3 thin films have been studied in detail. The K content in Ba0.6Sro.4TiO3 thin films has a strong influence on the material＇s properties including surface morphology and the dielectric and tunable properties. It was found that the Curie temperature of K-doped Bao.6Sr0.4TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films, which leads to a dielectric enhancement of K-doped Ba0.6Sr0.4TiO3 films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.
文摘采用分步沉积法制备不同Sr/Ti摩尔比例的Sr/Ti O2催化剂,以X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、傅里叶变换红外(FT-IR)光谱、紫外-可见漫反射光谱(UV-Vis RDS)等手段对样品进行了表征,以可见光催化降解亚甲基蓝为模型反应考察样品光催化活性.结果表明,催化剂的活性和结构随Sr/Ti摩尔比(n(Sr)/n(Ti))的变化而变化,当n(Sr)/n(Ti)≤3/2时,催化剂呈由Ti O2和Sr Ti O3组成的球状结构;而当n(Sr)/n(Ti)在3/2与4/1之间时,催化剂呈片状结构,且随着n(Sr)/n(Ti)增大,催化剂组成由Sr Ti O3和Sr2Ti O4变为Sr2Ti O4和Sr(OH)2H2O;当n(Sr)/n(Ti)=9/1时,催化剂呈以Sr(OH)2H2O为主的针状结构.其中,n(Sr)/n(Ti)=4/1的样品表现出最高的光催化活性,一级反应速率为Sr Ti O3钙钛矿催化剂的5.0倍,商用P25的86.7倍.
