The effect of Si （100） surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by （NH4）2S solution, which was attributed to physical adsorption of S at...The effect of Si （100） surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by （NH4）2S solution, which was attributed to physical adsorption of S atoms. SEM and XPS analyses reveal that Si surface atoms were chemically bonded with S atoms after Si surface treatment in NH4OH and （NH4）2S mixing solution. This induces a more ideal value for the Schottky barrier height compared with a diode treated only by HF solution, indicating that surface states originating from dangling bonds are passivated with S atoms.展开更多
Hydrothermal deposition of antimony selenosulfide(Sb_(2)(S,Se_(3)))has enabled solar cell applications to surpass the 10%efficiency threshold.This deposition process involves the reaction of three precursor materials:...Hydrothermal deposition of antimony selenosulfide(Sb_(2)(S,Se_(3)))has enabled solar cell applications to surpass the 10%efficiency threshold.This deposition process involves the reaction of three precursor materials:Sb,S,and Se.However,this process generates an unfavourable gradient of Se and S anions in the Sb_(2)(S,Se)_(3)film,which limits further efficiency improvements.Herein,we demonstrate how NH_(4)F can be used as an additive to regulate the band gradient of the Sb_(2)(S,Se)_(3)and modify the surface of the CdS electron-transporting layer.On the one hand,NH_(4)F inhibits the decomposition of Na_(2)S_(2)O_(3)and selenourea,which optimizes the deposition process and allows for adjustment of the Se/S ratio and their distribution in the Sb_(2)(S,Se)_(3)film.On the other hand,hydrolysis of NH_(4)F induces dissolution and redeposition of CdS,thereby effectively improving the morphology and crystallinity of the CdS substrate.Finally,the dual effect of NH_(4)F enables improved surface morphology and energy alignment of the Sb_(2)(S,Se)_(3)film,thus yielding a maximum efficiency of 10.28%,a 12%improvement over the control device.This study demonstrates an effective strategy for simultaneously modifying a sulfide-based substrate and regulating the element distribution during the deposition of a metal chalcogenide film for optoelectronic device applications.展开更多
The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, c...The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.展开更多
基金supported by the State Key Development Program for Basic Research of China(No.2006CB302704)
文摘The effect of Si （100） surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by （NH4）2S solution, which was attributed to physical adsorption of S atoms. SEM and XPS analyses reveal that Si surface atoms were chemically bonded with S atoms after Si surface treatment in NH4OH and （NH4）2S mixing solution. This induces a more ideal value for the Schottky barrier height compared with a diode treated only by HF solution, indicating that surface states originating from dangling bonds are passivated with S atoms.
基金the National Natural Science Foundation of China(22005293 and U19A2092)the National Key Research and Development Program of China(2019YFA0405600).
文摘Hydrothermal deposition of antimony selenosulfide(Sb_(2)(S,Se_(3)))has enabled solar cell applications to surpass the 10%efficiency threshold.This deposition process involves the reaction of three precursor materials:Sb,S,and Se.However,this process generates an unfavourable gradient of Se and S anions in the Sb_(2)(S,Se)_(3)film,which limits further efficiency improvements.Herein,we demonstrate how NH_(4)F can be used as an additive to regulate the band gradient of the Sb_(2)(S,Se)_(3)and modify the surface of the CdS electron-transporting layer.On the one hand,NH_(4)F inhibits the decomposition of Na_(2)S_(2)O_(3)and selenourea,which optimizes the deposition process and allows for adjustment of the Se/S ratio and their distribution in the Sb_(2)(S,Se)_(3)film.On the other hand,hydrolysis of NH_(4)F induces dissolution and redeposition of CdS,thereby effectively improving the morphology and crystallinity of the CdS substrate.Finally,the dual effect of NH_(4)F enables improved surface morphology and energy alignment of the Sb_(2)(S,Se)_(3)film,thus yielding a maximum efficiency of 10.28%,a 12%improvement over the control device.This study demonstrates an effective strategy for simultaneously modifying a sulfide-based substrate and regulating the element distribution during the deposition of a metal chalcogenide film for optoelectronic device applications.
基金supported by the National Natural Science Foundation of China(Nos.61274077,61474031,61464003)the Guangxi Natural Science Foundation(Nos.2013GXNSFGA019003,2013GXNSFAA019335)+2 种基金the Project(No.9140C140101140C14069)the Innovation Project of GUET Graduate Education(No.YJCXS201529)the National Science&Technology Major Project of China(No.2011ZX02708-003)
文摘The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.
