Fin Field Effect Transistor with Active 4-Bit Arithmetic Operations in 22 nm Technology

A design of a high-speed multi-core processor with compact size is a trending approach in the Integrated Circuits(ICs)fabrication industries.Because whenever device size comes down into narrow,designers facing many power den-sity issues should be reduced by scaling threshold voltage and supply voltage.Initially,Complementary Metal Oxide Semiconductor(CMOS)technology sup-ports power saving up to 32 nm gate length,but further scaling causes short severe channel effects such as threshold voltage swing,mobility degradation,and more leakage power(less than 32)at gate length.Hence,it directly affects the arithmetic logic unit(ALU),which suffers a significant power density of the scaled multi-core architecture.Therefore,it losses reliability features to get overheating and increased temperature.This paper presents a novel power mini-mization technique for active 4-bit ALU operations using Fin Field Effect Tran-sistor(FinFET)at 22 nm technology.Based on this,a diode is directly connected to the load transistor,and it is active only at the saturation region as a function.Thereby,the access transistor can cutoff of the leakage current,and sleep transis-tors control theflow of leakage current corresponding to each instant ALU opera-tion.The combination of transistors(access and sleep)reduces the leakage current from micro to nano-ampere.Further,the power minimization is achieved by con-necting the number of transistors(6T and 10T)of the FinFET structure to ALU with 22 nm technology.For simulation concerns,a Tanner(T-Spice)with 22 nm technology implements the proposed design,which reduces threshold vol-tage swing,supply power,leakage current,gate length delay,etc.As a result,it is quite suitable for the ALU architecture of a high-speed multi-core processor.

Challenges of 22 nm and beyond CMOS technology

It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new device architectures, high K/metal gate （HK/MG） stack and integration technology, mobility enhancement technologies, source/drain engineering and advanced copper interconnect technology with ultra-low-k process.