Electrical properties of an AIlnN/GaN high-electron mobility transistor （HEMT） on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation cur...Electrical properties of an AIlnN/GaN high-electron mobility transistor （HEMT） on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AIInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 61204018)
文摘Electrical properties of an AIlnN/GaN high-electron mobility transistor （HEMT） on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AIInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.
