Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As ...Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As the demand for electronic components with high efficiency dramatically increasing,new materials are needed for power device fabrication.Betaphase gallium oxide,an ultra-wide bandgap semiconductor,has been considered as a promising candidate,and variousβ-Ga_(2)O_(3)power devices with high breakdown voltages have been demonstrated.However,the realization of enhancement-mode(E-mode)β-Ga_(2)O_(3)field-effect transistors(FETs)is still challenging,which is a critical problem for a myriad of power electronic applications.Recently,researchers have made some progress on E-modeβ-Ga_(2)O_(3)FETs via various methods,and several novel structures have been fabricated.This article gives a review of the material growth,devices and properties of these E-modeβ-Ga_(2)O_(3)FETs.The key challenges and future directions in E-modeβ-Ga_(2)O_(3)FETs are also discussed.展开更多
Electromagnetic interference(EMI)shielding materials with excellent flexibility and mechanical properties and outstanding thermal conductivity have become a hot topic of research in functional composites.In this study...Electromagnetic interference(EMI)shielding materials with excellent flexibility and mechanical properties and outstanding thermal conductivity have become a hot topic of research in functional composites.In this study,the“sol-gel-film conversion technique”is used to assemble polyetherimidefunctionalized Ti_(3)C_(2)T_(x) nanosheets(f-Ti_(3)C_(2)T_(x))with poly(p-phenylene-2,6-benzobisoxazole)(PBO)nanofibers(PNFs),followed by dialysis and vacuum drying to prepare f-Ti_(3)C_(2)T_(x)/PNF films with lamellar structures.When the loading of f-Ti_(3)C_(2)T_(x) is 70 wt%,the f-Ti_(3)C_(2)T_(x)/PNF film presents optimal comprehensive properties,with an EMI shielding effectiveness(SE)of 35 dB and a specific SE/thickness((SSE,SE/density)/t)of 8211 dB cm^(2)/g,a tensile strength of 125.1 MPa,an in-plane thermal conductivity coefficient(λ)of 5.82 W/(m K),and electrical conductivity of 1943 S/m.After repeated folding for 10,000 cycles,the EMI SE and the tensile strength of f-Ti_(3)C_(2)T_(x)/PNFs films still remain 33.4 dB and 116.1 MPa,respectively.Additionally,the f-Ti_(3)C_(2)T_(x)/PNF film also shows excellent thermal stability,flame retardancy,and structural stability.This would provide a novel method for the design and fabrication of multifunctional composite films and considerably expand the applications of MXene-and PNF-based composites in the fields of EMI shielding and thermal management.展开更多
The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_(2) O_(3)) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_(2) O_(...The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_(2) O_(3)) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_(2) O_(3), their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga_(2) O_(3) Schottky barrier diodes(SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga_(2) O_(3), work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga_(2) O_(3) plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga_(2) O_(3) SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga_(2) O_(3) diode.展开更多
<span style="font-family:Verdana;">Purpose: </span><span style="font-family:Verdana;">To discuss the effect of “1 + 3 + 3” emergency management mode to deal with COVID-19 pandem...<span style="font-family:Verdana;">Purpose: </span><span style="font-family:Verdana;">To discuss the effect of “1 + 3 + 3” emergency management mode to deal with COVID-19 pandemic in fever outpatient service of general hospitals. Method: This paper analyzes and summarizes the problems encountered by fever outpatient service in dealing with the COVID-19 pandemic from three aspects of “One Team”, “Three-Key” Control and “Three Mosts”. Results: The application of “1 + 3 + 3” emergency management mode can effectively boost the orderliness and efficiency of fever outpatient service in dealing with COVID-19 pandemic. Conclusion: The “1 + 3 + 3” emergency management mode provides a new management mode and idea for dealing with COVID-19 pandemic,</span><span style="font-family:""> </span><span style="font-family:Verdana;">so the fever outpatient service of general hospitals can better improve the national overall anti-pandemic situation.展开更多
The degradation of formaldehyde gas was studied using UV/TiO2/O3 process under the condition of continuous flow mode. The effects of humidity, initial formaldehyde concentration, residence time and ozone adding amount...The degradation of formaldehyde gas was studied using UV/TiO2/O3 process under the condition of continuous flow mode. The effects of humidity, initial formaldehyde concentration, residence time and ozone adding amount on degradation of formaldehyde gas were investigated. The experimental results indicated that the combination of ozonation with photocatalytic oxidation on the degradation of formaldehyde showed a synergetic action, e.g,, it could considerably increase decomposing of formaldehyde. The degradation efficiency of formaldehyde was between 73.6% and 79.4% while the initial concentration in the range of 1.84--24 mg/m^3 by O3/TiO2flJV process. The optimal humidity was about 50% in UV/TiO2/O3 processs and degradation of formaldehyde increases from 39.0% to 94.1% when the ozone content increased from 0 to 141 mg/m^3. Furthermore, the kinetics of formaldehyde degradation reaction could be described by Langmuir-Hinshelwood model. The rate constant k of 46.72 mg/（m^3.min） and Langmuir adsorption coefficient K of 0.0268 m^3/mg were obtained.展开更多
The properties of C-H vibration softening for CH2 and CHa radicals absorbed on Cun（n=1-6） clusters have been investigated, using the density functional theory with hybrid functional. The results indicate that the ab...The properties of C-H vibration softening for CH2 and CHa radicals absorbed on Cun（n=1-6） clusters have been investigated, using the density functional theory with hybrid functional. The results indicate that the absorption of CH2 on Cu clusters is stronger than the case of CH3. The vibrational frequencies of C-H bonding agree with the experimental results obtained for CH2 and CH3 absorbed on Cu（111）. With the increase of cluster size, the softening （Einstein shift） of C-H vibrational modes become stronger.展开更多
We consider the quantum mechanical SU（2） transformation e^2λJzJ±e^-2λJz = e^±2λJ±as if the meaning of squeezing with e^±2λ being squeezing parameter. By studying SU（2） operators （J±,...We consider the quantum mechanical SU（2） transformation e^2λJzJ±e^-2λJz = e^±2λJ±as if the meaning of squeezing with e^±2λ being squeezing parameter. By studying SU（2） operators （J±, Jz） from the point of view of squeezing we find that （J±,Jz） can also be realized in terms of 3-mode bosonic operators. Employing this realization, we find the natural representation （the eigenvectors of J＋ or J-） of the 3-mode squeezing operator e^2λJz. The idea of considering quantum SU（2） transformation as if squeezing is liable for us to obtain the new bosonic operator realization of SU（2） and new squeezing operators.展开更多
基金supported in part by the National Basic Research Program of China(Grant No.2021YFB3600202)Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008)the Suzhou Science and Technology Foundation(Grant No.SYG202027)。
文摘Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As the demand for electronic components with high efficiency dramatically increasing,new materials are needed for power device fabrication.Betaphase gallium oxide,an ultra-wide bandgap semiconductor,has been considered as a promising candidate,and variousβ-Ga_(2)O_(3)power devices with high breakdown voltages have been demonstrated.However,the realization of enhancement-mode(E-mode)β-Ga_(2)O_(3)field-effect transistors(FETs)is still challenging,which is a critical problem for a myriad of power electronic applications.Recently,researchers have made some progress on E-modeβ-Ga_(2)O_(3)FETs via various methods,and several novel structures have been fabricated.This article gives a review of the material growth,devices and properties of these E-modeβ-Ga_(2)O_(3)FETs.The key challenges and future directions in E-modeβ-Ga_(2)O_(3)FETs are also discussed.
基金The authors are grateful for the support of and funding from the Foundation of National Natural Science Foundation of China(51903145 and 51973173)the Natural Science Basic Research Plan for Distinguished Young Scholars in Shaanxi Province of China(2019JC-11)+1 种基金Fundamental Research Funds for the Central Universities(D5000210627)L.Wang is grateful to the Innovation Foundation for Doctor Dissertation of Northwestern Polytechnical University(CX202053).
文摘Electromagnetic interference(EMI)shielding materials with excellent flexibility and mechanical properties and outstanding thermal conductivity have become a hot topic of research in functional composites.In this study,the“sol-gel-film conversion technique”is used to assemble polyetherimidefunctionalized Ti_(3)C_(2)T_(x) nanosheets(f-Ti_(3)C_(2)T_(x))with poly(p-phenylene-2,6-benzobisoxazole)(PBO)nanofibers(PNFs),followed by dialysis and vacuum drying to prepare f-Ti_(3)C_(2)T_(x)/PNF films with lamellar structures.When the loading of f-Ti_(3)C_(2)T_(x) is 70 wt%,the f-Ti_(3)C_(2)T_(x)/PNF film presents optimal comprehensive properties,with an EMI shielding effectiveness(SE)of 35 dB and a specific SE/thickness((SSE,SE/density)/t)of 8211 dB cm^(2)/g,a tensile strength of 125.1 MPa,an in-plane thermal conductivity coefficient(λ)of 5.82 W/(m K),and electrical conductivity of 1943 S/m.After repeated folding for 10,000 cycles,the EMI SE and the tensile strength of f-Ti_(3)C_(2)T_(x)/PNFs films still remain 33.4 dB and 116.1 MPa,respectively.Additionally,the f-Ti_(3)C_(2)T_(x)/PNF film also shows excellent thermal stability,flame retardancy,and structural stability.This would provide a novel method for the design and fabrication of multifunctional composite films and considerably expand the applications of MXene-and PNF-based composites in the fields of EMI shielding and thermal management.
基金supported by the National Natural Science Foundation of China (Grant Nos. 61925110, 61821091, 62004184, 62004186, and 51961145110)the National Key R&D Program of China (Grant Nos. 2018YFB0406504 and 2016YFA0201803)+4 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences (CAS)(Grant No. XDB44000000)the Key Research Program of Frontier Sciences of CAS (Grant No. QYZDB-SSW-JSC048)the Fundamental Research Funds for the Central Universities,China (Grant Nos. WK2100000014 and WK2100000010)the Key-Area Research and Development Program of Guangdong Province,China (Grant No. 2020B010174002)the Opening Project of Key Laboratory of Microelectronics Devices&Integration Technology in Institute of Microelectronics of CAS and Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS。
文摘The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_(2) O_(3)) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_(2) O_(3), their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga_(2) O_(3) Schottky barrier diodes(SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga_(2) O_(3), work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga_(2) O_(3) plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga_(2) O_(3) SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga_(2) O_(3) diode.
文摘<span style="font-family:Verdana;">Purpose: </span><span style="font-family:Verdana;">To discuss the effect of “1 + 3 + 3” emergency management mode to deal with COVID-19 pandemic in fever outpatient service of general hospitals. Method: This paper analyzes and summarizes the problems encountered by fever outpatient service in dealing with the COVID-19 pandemic from three aspects of “One Team”, “Three-Key” Control and “Three Mosts”. Results: The application of “1 + 3 + 3” emergency management mode can effectively boost the orderliness and efficiency of fever outpatient service in dealing with COVID-19 pandemic. Conclusion: The “1 + 3 + 3” emergency management mode provides a new management mode and idea for dealing with COVID-19 pandemic,</span><span style="font-family:""> </span><span style="font-family:Verdana;">so the fever outpatient service of general hospitals can better improve the national overall anti-pandemic situation.
基金Project supported by the Science Project of Harbin City(No. H2001-12)the Youth Foundation of School of Municipal and Environmental Engineering in Harbin Institute of Technology(No. 01306914).
文摘The degradation of formaldehyde gas was studied using UV/TiO2/O3 process under the condition of continuous flow mode. The effects of humidity, initial formaldehyde concentration, residence time and ozone adding amount on degradation of formaldehyde gas were investigated. The experimental results indicated that the combination of ozonation with photocatalytic oxidation on the degradation of formaldehyde showed a synergetic action, e.g,, it could considerably increase decomposing of formaldehyde. The degradation efficiency of formaldehyde was between 73.6% and 79.4% while the initial concentration in the range of 1.84--24 mg/m^3 by O3/TiO2flJV process. The optimal humidity was about 50% in UV/TiO2/O3 processs and degradation of formaldehyde increases from 39.0% to 94.1% when the ozone content increased from 0 to 141 mg/m^3. Furthermore, the kinetics of formaldehyde degradation reaction could be described by Langmuir-Hinshelwood model. The rate constant k of 46.72 mg/（m^3.min） and Langmuir adsorption coefficient K of 0.0268 m^3/mg were obtained.
文摘The properties of C-H vibration softening for CH2 and CHa radicals absorbed on Cun（n=1-6） clusters have been investigated, using the density functional theory with hybrid functional. The results indicate that the absorption of CH2 on Cu clusters is stronger than the case of CH3. The vibrational frequencies of C-H bonding agree with the experimental results obtained for CH2 and CH3 absorbed on Cu（111）. With the increase of cluster size, the softening （Einstein shift） of C-H vibrational modes become stronger.
基金supported by the National Natural Science Foundation of China(Grant Nos.11175113 and 11275123)the Key Project of Natural Science Fund of Anhui Province,China(Grant No.KJ2013A261)
文摘We consider the quantum mechanical SU（2） transformation e^2λJzJ±e^-2λJz = e^±2λJ±as if the meaning of squeezing with e^±2λ being squeezing parameter. By studying SU（2） operators （J±, Jz） from the point of view of squeezing we find that （J±,Jz） can also be realized in terms of 3-mode bosonic operators. Employing this realization, we find the natural representation （the eigenvectors of J＋ or J-） of the 3-mode squeezing operator e^2λJz. The idea of considering quantum SU（2） transformation as if squeezing is liable for us to obtain the new bosonic operator realization of SU（2） and new squeezing operators.
