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题名STM式三维nm级轮廓仪的研究
被引量：1
- 1
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作者
李文菊
张鸿海
师汉民
陈日曜
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机构
华中理工大学机械科学与工程学院
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出处
《华中理工大学学报》
CSCD
北大核心
1996年第7期34-36,共3页
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基金
国家自然科学基金
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文摘
基于ＳＴＭ式三维ｎｍ级轮廓仪的检测原理、检测系统，研究了与其相关的检测技术．该轮廓仪可直接测量较大工件，扫描范围为１４０μｍ×１４０μｍ，分辨率达ｎｍ级．最后对工作台扫描非线性及扫描控制技术进行讨论，并利用多项式拟合法补偿工作台扫描的非线性误差，进而提出了一种平滑反馈扫描技术．
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关键词
检测
扫描隧道显微镜
轮廓仪
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Keywords
measurement
scanning tunneling microscope (STM)
3-d profiler with resolution of nanometer level
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分类号
TN16
[电子电信—物理电子学]
TH821
[机械工程—精密仪器及机械]
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题名基于隧道效应的nm级三维轮廓仪的研究
被引量：7
- 2
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作者
张鸿海
曹传
师汉民
陈日曜
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机构
机械科学与工程学院
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出处
《华中理工大学学报》
CSCD
北大核心
1996年第4期4-7,共4页
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基金
国家自然科学基金
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文摘
介绍两种不同结构形式的基于电子隧道效应的ｎｍ级三维轮廓仪．其纵向分辨率可达００２ｎｍ，横向分辨率可达０２ｎｍ，扫描范围分别达到４０μｍ×４０μｍ和１４０μｍ×１４０μｍ．可直接对φ５０ｍｍ和φ１３０ｍｍ的大尺寸样品表面进行ｎｍ级的超微观形貌检测与分析．
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关键词
超精密测量
nm级形貌
隧道效应
三维轮廓仪
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Keywords
ultraprecision measurement
morphology of nm level
tunneling
wide range scanning
3 D profiler of nanometer level resolution
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分类号
TG84
[金属学及工艺—公差测量技术]
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题名表面等离子体无掩膜干涉光刻系统的数值分析(英文)
被引量：5
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作者
董启明
郭小伟
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机构
电子科技大学光电信息学院
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出处
《光子学报》
EI
CAS
CSCD
北大核心
2012年第5期558-564,共7页
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基金
The National Natural Science Foundation of China(No.60906052)
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文摘
表面等离子体激元具有近场增强效应,可以代替光子作为曝光源形成纳米级特征尺寸的图像.本文数值分析了棱镜辅助表面等离子体干涉系统的参量空间,并给出了计算原理和方法.结果表明,适当地选择高折射率棱镜、低银层厚度、入射波长和光刻胶折射率,可以获得高曝光度、高对比度的干涉图像.入射波长为431nm时,选择40nm厚的银层,曝光深度可达200nm,条纹周期为110nm.数值分析结果为实验的安排提供了理论支持.
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关键词
干涉光刻
表面等离子体激元
克莱舒曼结构
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Keywords
Interference lithography
Surface plasmon plortiton
Kretschmann structureCLCN: TN305.7 Document Code:A Article ID:1004-4213(2012)05-0558-70 IntroductionThere is a growing interest in exploring new nanolithography techniques with high efficiency,low cost and large-area fabrication to fabricate nanoscale devices for nanotechnology applications.Conventional photolithography has remained a useful microfabrication technology because of its ease of repetition and suitability for large-area fabrication[1].The diffraction limit,however,restricts the fabrication scale of photolithography[2].Potential solutions that have actually been pursued require increasingly shorter illumination wavelengths for replicating smaller structures.It is becoming more difficult and complicated to use the short optical wavelengths to reach the desired feature sizes.Other methods such as electron beam lithography[3],ion beam lithography[4],scanning probe lithography[5],nanoimprint lithography(NIL)[6],and evanescent near-field optical lithography(ENFOL)[7] have been developed in order to achieve nanometer-scale features.As we know,the former three techniques need scanning and accordingly are highly inefficient.In NIL,the leveling of the imprint template and the substrate during the printing process,which determines the uniformity of the imprint result,is a challenging issue of this method.ENFOL have the potential to produce subwavelength structures with high efficiency,but it encounters the fact that the evanescent field decays rapidly through the aperture,thus attenuating the transmission intensity at the exit plane and limiting the exposure distance to the scale of a few tens of nanometers from the mask.In recent years,the use of surface-plasmon polaritons(SPPs) instead of photons as an exposure source was rapidly developed to fabricate nanoscale structures.SPPs are characterized by its near field enhancement so that SPP-based lithography can greatly extend exposure depth and improve pattern contrast.Grating-assisted SPP interference,such as SPP resonant interference nanolithography[8] and SPP-assisted interference nanolithography[9],achieved a sub-100nm interference pattern.The techniques,however,are necessary to fabricate a metal grating with a very fine period and only suitable for small-area interference.To avoid the fabrication of the metal grating,a prism-based SPP maskless interference lithography was proposed in 2006,which promises good lithography performance.The approach offers potential to achieve sub-65nm and even sub-32nm feature sizes.However,the structure parameters are always not ideal in a real system.One wants to know how much influence the parameter variations have on the pattern resolution and what variations of the parameters are allowed to obtain an effective interference.Thus,it is necessary to explore the parameter spaces.1 SPP maskless interference lithography systemThe SPP maskless interference lithography system is shown in Fig.1.A p-polarized laser is divided into two beams by a grating splitter,and then goes into the prism-based multilayer system.Under a given condition,the metal film can exhibit collective electron oscillations known as SPPs which are charge density waves that are characterized by intense electromagnetic fields confined to the metallic surface.If the metal layer Fig.1 Schematic for SPP maskless interference lithography systemis sufficiently thin,plasma waves at both metal interfaces are coupled,resulting in symmetric and antisymmetric SPPs.When the thickness h of metal film,dielectric constant ε1,ε2,ε3 of medium above,inside,below the metal film are specified,the coupling equation is shown as followstanh(S2h)(ε1ε3S22+ε22S1S3)+(ε1ε2S2S3+ε2ε3S1S2)=0
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分类号
TN305.7
[电子电信—物理电子学]
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