期刊文献+
共找到33篇文章
< 1 2 >
每页显示 20 50 100
High density Al2O3/TaN-based metal-insulatormetal capacitors in application to radio equency integrated circuits 被引量:3
1
作者 丁士进 黄宇健 +3 位作者 黄玥 潘少辉 张卫 汪礼康 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第9期2803-2808,共6页
Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically.... Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance (VCCs) of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance. 展开更多
关键词 metal-insulator-metal atomic-layer-deposition AL2O3 radio frequency integrated circuit
下载PDF
Some Tools to Model Ground or Supply Bounces Induced in and out of Heterogeneous Integrated Circuits
2
作者 Christian Gontrand Olivier Valorge +4 位作者 Rabah Dahmanil Fengyuan Sun Francis Calmon Jacques Verdier Paul Dautriche 《Computer Technology and Application》 2011年第10期788-800,共13页
Electrical ground looks simple on a schematic; unfortunately, the actual performance of a circuit is dictated by its layout (and by its printed-circuit-board). When the ground node moves, system performance suffers ... Electrical ground looks simple on a schematic; unfortunately, the actual performance of a circuit is dictated by its layout (and by its printed-circuit-board). When the ground node moves, system performance suffers and the system radiates electromagnetic interferences. But the understanding of the physics of ground noise can provide an intuitive sense for reducing the problem. Ground bounce can produce transients with amplitudes of volts; most often changing magnetic flux is the cause; in this work, the authors use a Finite-Difference Time-Domain to begin to understand such phenomena. Additionally, predicting substrate cross-talks in mixed-signal circuits has become a critical issue to preserve signal integrity in future integrated systems. Phenomena that involve parasitic signal propagation into the substrate are discussed. A simple methodology to predict the substrate cross-talk and some associated tools are presented. Finally, the authors indicate a stochastic method which could grasp both outer or inner RF (Radio-Frequency) radiations and substrate parasites. 展开更多
关键词 Electromagnetism 3D (three-dimensional) integration noise TSV (through silicon vias) ground or supply bounce mixed analog-digital integrated circuits substrate noise stochastic methodology.
下载PDF
HDB_3编译码器的优化设计与实现 被引量:6
3
作者 张巧文 朱仲杰 +1 位作者 梁丰 戴迎珺 《西南交通大学学报》 EI CSCD 北大核心 2008年第1期25-28,76,共5页
针对现有HDB3(三阶高密度双极性)编码器中存在编码复杂、输出延时长等缺陷,提出了一种基于分组编码、统一极性判断和位置极性判断的HDB3编码器快速设计方法,并相应提出了基于极性判别的快速译码设计方法,避免了译码过程中的取代节检测.... 针对现有HDB3(三阶高密度双极性)编码器中存在编码复杂、输出延时长等缺陷,提出了一种基于分组编码、统一极性判断和位置极性判断的HDB3编码器快速设计方法,并相应提出了基于极性判别的快速译码设计方法,避免了译码过程中的取代节检测.在QuartusⅡ5.1下的仿真结果表明,提出的编译码方法具有消耗资源少、工作速度快的优点,与现有方法相比,编码和译码占用的逻辑单元数分别减少25%和40%,扇出数分别减少29.4%和50.9%.经实际测试,编译码器功能正确,可用于实际电路中. 展开更多
关键词 HDB3 VHDL 编译码器 极性判别
下载PDF
Design and implementation of GM- APD array readout circuit for infrared imaging
4
作者 吴金 袁德军 +3 位作者 王灿 陈浩 郑丽霞 孙伟锋 《Journal of Southeast University(English Edition)》 EI CAS 2016年第1期11-15,共5页
Based on an avalanche photodiode( APD) detecting array working in Geiger mode( GM-APD), a high-performance infrared sensor readout integrated circuit( ROIC) used for infrared 3D( three-dimensional) imaging is ... Based on an avalanche photodiode( APD) detecting array working in Geiger mode( GM-APD), a high-performance infrared sensor readout integrated circuit( ROIC) used for infrared 3D( three-dimensional) imaging is proposed. The system mainly consists of three functional modules, including active quenching circuit( AQC), time-to-digital converter( TDC) circuit and other timing controller circuit. Each AQC and TDC circuit together constitutes the pixel circuit. Under the cooperation with other modules, the current signal generated by the GM-APD sensor is detected by the AQC, and the photon time-of-flight( TOF) is measured and converted to a digital signal output to achieve a better noise suppression and a higher detection sensitivity by the TDC. The ROIC circuit is fabricated by the CSMC 0. 5 μm standard CMOS technology. The array size is 8 × 8, and the center distance of two adjacent cells is 100μm. The measurement results of the chip showthat the performance of the circuit is good, and the chip can achieve 1 ns time resolution with a 250 MHz reference clock, and the circuit can be used in the array structure of the infrared detection system or focal plane array( FPA). 展开更多
关键词 infrared 3D(three-dimensional) imaging readout integrated circuit(ROIC) Geiger mode avalanche photodiode active quenching circuit(AQC) time-to-digital converter(TDC)
下载PDF
3mm波段低噪声放大器 被引量:3
5
作者 刘永强 张力江 +2 位作者 魏洪涛 刘会东 蔡树军 《半导体技术》 CAS CSCD 北大核心 2014年第6期410-413,418,共5页
基于InP HEMT在3 mm波段的优越的噪声性能,设计制作了一款3 mm波段InP HEMT低噪声放大器。通过合理设计外延材料结构和器件结构,提高器件性能。测试1~40 GHz器件的S参数和噪声参数以及75~110 GHz器件的S参数,并采用外推的方法建立... 基于InP HEMT在3 mm波段的优越的噪声性能,设计制作了一款3 mm波段InP HEMT低噪声放大器。通过合理设计外延材料结构和器件结构,提高器件性能。测试1~40 GHz器件的S参数和噪声参数以及75~110 GHz器件的S参数,并采用外推的方法建立了器件的噪声模型。电路设计采用ADS仿真软件,采用全版图电磁场仿真保证电路设计的准确性,最终实现了一款3 mm波段低噪声放大器。测试结果显示在92~96 GHz时,带内增益大于20 dB,噪声系数小于4.0 dB。芯片面积3.07 mm×1.75 mm,直流功耗60 mW。 展开更多
关键词 3mm波段 单片式微波集成电路(MMIC) 低噪声放大器(LNA) InPHEMT 噪声模型
下载PDF
Speeding up carbon nanotube integrated circuits through three-dimensional architecture 被引量:3
6
作者 Yunong Xie Zhiyong Zhang +1 位作者 Donglai Zhong Lianmao Peng 《Nano Research》 SCIE EI CAS CSCD 2019年第8期1810-1816,共7页
Semiconducting carbon nanotube (CNT) field effect transistor (FET) is attractive for constructing three-dimensional (3D) integrated circuits (ICs) because of its low-temperature processes and low power dissipation. Ho... Semiconducting carbon nanotube (CNT) field effect transistor (FET) is attractive for constructing three-dimensional (3D) integrated circuits (ICs) because of its low-temperature processes and low power dissipation. However, CNT based 3D ICs reported usually suffered from lower performance than that of monolayer CNT ICs. In this work, we develop a 3D IC technology through integrating multi-layer high performance CNT film FETs into one chip, and show that it promotes the operation speed of CNT based 3D ICs considerably. We also explore the advantage on ICs of 3D architecture, which brings 38% improvement on speed over two-dimensional (2D) one. Specially, we demonstrate the fabrication of 3D five-stage ring-oscillator circuits with an oscillation frequency of up to 680 MHz and stage delay of 0.15 ns, which represents the highest speed of 3D CNT-based ICs. 展开更多
关键词 carbon NANOTUBE nanoelectronics FIELD-EFFECT TRANSISTORS three-dimensional (3D) integrated circuits ring OSCILLATOR
原文传递
An optimal stacking order for mid-bond testing cost reduction of 3D IC 被引量:2
7
作者 Ni Tianming Liang Huaguo +4 位作者 Nie Mu Bian Jingchang Huang Zhengfeng Xu Xiumin Fang Xiangsheng 《Journal of Southeast University(English Edition)》 EI CAS 2018年第2期166-172,共7页
In order to solve the problem that the testing cost of the three-dimensional integrated circuit(3D IC)is too high,an optimal stacking order scheme is proposed to reduce the mid-bond test cost.A new testing model is bu... In order to solve the problem that the testing cost of the three-dimensional integrated circuit(3D IC)is too high,an optimal stacking order scheme is proposed to reduce the mid-bond test cost.A new testing model is built with the general consideration of both the test time for automatic test equipment(ATE)and manufacturing failure factors.An algorithm for testing cost and testing order optimization is proposed,and the minimum testing cost and optimized stacking order can be carried out by taking testing bandwidth and testing power as constraints.To prove the influence of the optimal stacking order on testing costs,two baselines stacked in sequential either in pyramid type or in inverted pyramid type are compared.Based on the benchmarks from ITC 02,experimental results show that for a 5-layer 3D IC,under different constraints,the optimal stacking order can reduce the test costs on average by 13%and 62%,respectively,compared to the pyramid type and inverted pyramid type.Furthermore,with the increase of the stack size,the test costs of the optimized stack order can be decreased. 展开更多
关键词 three-dimensional integrated circuit(3D IC) mid-bond test cost stacking order sequential stacking failed bonding
下载PDF
A 12-Bit 1-Gsample/s Nyquist Current-Steering DAC in 0.35 µm CMOS for Wireless Transmitter 被引量:1
8
作者 Peiman Aliparast Hossein B. Bahar +2 位作者 Ziaadin D. Koozehkanani Jafar Sobhi Gader Karimian 《Circuits and Systems》 2011年第2期74-84,共11页
The present work deals with 12-bit Nyquist current-steering CMOS digital-to-analog converter (DAC) which is an essential part in baseband section of wireless transmitter circuits. Using oversampling ratio (OSR) for th... The present work deals with 12-bit Nyquist current-steering CMOS digital-to-analog converter (DAC) which is an essential part in baseband section of wireless transmitter circuits. Using oversampling ratio (OSR) for the proposed DAC leads to avoid use of an active analog reconstruction filter. The optimum segmentation (75%) has been used to get the best DNL and reduce glitch energy. This segmentation ratio guarantees the monotonicity. Higher performance is achieved using a new 3-D thermometer decoding method which reduces the area, power consumption and the number of control signals of the digital section. Using two digital channels in parallel, helps reach 1-GSample/s frequency. Simulation results show that the spurious- free-dynamic-range (SFDR) in Nyquist rate is better than 64 dB for sampling frequency up to 1-GSample/s. The analog voltage supply is 3.3 V while the digital part of the chip operates with only 2.4 V. Total power consumption in Nyquist rate measurement is 144.9 mW. The chip has been processed in a standard 0.35 μm CMOS technology. Active area of chip is 1.37 mm2. 展开更多
关键词 Wireless Transmitter 3-D THERMOMETER DECODING Current STEERING DAC WLAN integrated circuits CMOS
下载PDF
一种由多级2/3分频单元级联而成的通道可编程分频器设计 被引量:1
9
作者 杨扬 魏鲁 袁昊煜 《固体电子学研究与进展》 CAS 北大核心 2021年第2期149-153,共5页
介绍了一种由多级2/3分频单元级联的可编程分频器,可应用于扇出缓冲器的通道中。分频器采用0.18μm BiCMOS工艺实现。分频器的电源电压为3.3 V,分频比支持1、3、5以及4~4094的所有偶数分频,且所有分频输出信号的占空比为50%。
关键词 可编程分频器 扇出缓冲器 2/3分频单元 占空比 集成电路
下载PDF
γ射线辐照对探测器的SiO_(2)-Si_(3)N_(4)复合栅界面和暗电流的影响
10
作者 曾武贤 钟玉杰 《集成电路应用》 2022年第4期4-7,共4页
分析表明,利用γ射线对SiO_(2)-Si_(3)N_(4)复合栅进行辐照,通过C-V曲线测试发现,经过γ射线辐照,C-V曲线向负方向漂移,C-V曲线整体抬高,平带电压向负方向漂移,界面态增大。辐照后CCD器件的暗电流变大,通过γ射线辐照对CCD的Si-SiO_(2)... 分析表明,利用γ射线对SiO_(2)-Si_(3)N_(4)复合栅进行辐照,通过C-V曲线测试发现,经过γ射线辐照,C-V曲线向负方向漂移,C-V曲线整体抬高,平带电压向负方向漂移,界面态增大。辐照后CCD器件的暗电流变大,通过γ射线辐照对CCD的Si-SiO_(2)界面产生损伤的机理分析,发现辐照后器件暗电流的增加主要是辐照后栅氧化层中产生的感生界面态电荷和场氧化层中产生大量的复合中心引起。辐照后CCD暗电流的变化和SiO_(2)-Si_(3)N_(4)复合栅界面的变化原因相同,SiO_(2)-Si_(3)N_(4)复合栅界面的变化导致了CCD暗电流发生了变化。 展开更多
关键词 集成电路 Γ射线 Si-SiO_(2)界面 CCD 辐射损伤
下载PDF
Development of a viable 3D integrated circuit technology
11
作者 陈文新 高秉强 《Science in China(Series F)》 2001年第4期241-248,共8页
Three-dimensional integrated circuit technology with transistors stacked on top of one an-other in multi-layer silicon film has always been a vision in the future technology direction. While the idea is simple, the te... Three-dimensional integrated circuit technology with transistors stacked on top of one an-other in multi-layer silicon film has always been a vision in the future technology direction. While the idea is simple, the technique to obtain high performance multi-layer transistors is extraordinarily diffi-cult. Not until recently does such technology become feasible. In this paper, the background and vari-ous techniques to form three-dimensional circuits will be reviewed. Recent development of a simple and promising technology to achieve three-dimensional integration using Metal-Induced-Lateral-Crystalliza-tion will be described. Preliminary results of 3D inverters will also be provided to demonstrate the viabil-ity for 3D integration. 展开更多
关键词 3D integrated circuit technology TRANSISTOR silicon film.
原文传递
RF-TSV DESIGN, MODELING AND APPLICATION FOR 3D MULTI-CORE COMPUTER SYSTEMS
12
作者 Yu Le Yang Haigang Xie Yuanlu 《Journal of Electronics(China)》 2012年第5期431-444,共14页
The state-of-the-art multi-core computer systems are based on Very Large Scale three Dimensional (3D) Integrated circuits (VLSI). In order to provide high-speed vertical data transmission in such 3D systems, efficient... The state-of-the-art multi-core computer systems are based on Very Large Scale three Dimensional (3D) Integrated circuits (VLSI). In order to provide high-speed vertical data transmission in such 3D systems, efficient Through-Silicon Via (TSV) technology is critically important. In this paper, various Radio Frequency (RF) TSV designs and models are proposed. Specifically, the Cu-plug TSV with surrounding ground TSVs is used as the baseline structure. For further improvement, the dielectric coaxial and novel air-gap coaxial TSVs are introduced. Using the empirical parameters of these coaxial TSVs, the simulation results are obtained demonstrating that these coaxial RF-TSVs can provide two-order higher of cut-off frequencies than the Cu-plug TSVs. Based on these new RF-TSV technologies, we propose a novel 3D multi-core computer system as well as new architectures for manipulating the interfaces between RF and baseband circuit. Taking into consideration the scaling down of IC manufacture technologies, predictions for the performance of future generations of circuits are made. With simulation results indicating energy per bit and area per bit being reduced by 7% and 11% respectively, we can conclude that the proposed method is a worthwhile guideline for the design of future multi-core computer ICs. 展开更多
关键词 Three Dimensional (3D) Very Large Scale integrated circuits (VLSI) Ratio Frequency (RF) Through-Silicon Vias (TSVs) Multi-core computer technology
下载PDF
10KV、35KV线路保护组合继电器
13
作者 孙丰奇 《郑州工学院学报》 1995年第4期50-52,共3页
“10KV、35KV线路保护组合继电器”是许昌继电器研究所委托我们研制的继电器新型式。该继电器采用集成电路构成,集线路的速断保护、过电流保护及三相一次重合闸于一体。本文介绍组合继电器的构成原理。
关键词 过电流保护 组合继电器 线路保护 保护继电器
下载PDF
Efficient Hierarchical Algorithm for Mixed Mode Placement in Three Dimensional Integrated Circuit Chip Designs
14
作者 闫海霞 周强 +1 位作者 洪先龙 李卓远 《Tsinghua Science and Technology》 SCIE EI CAS 2009年第2期161-169,共9页
Hierarchical art was used to solve the mixed mode placement for three dimensional (3-D) integrated circuit design. The 3-D placement flow stream includes hierarchical clustering, hierarchical 3-D floorplanning, vert... Hierarchical art was used to solve the mixed mode placement for three dimensional (3-D) integrated circuit design. The 3-D placement flow stream includes hierarchical clustering, hierarchical 3-D floorplanning, vertical via mapping, and recursive two dimensional (2-D) global/detailed placement phases. With state-of-the-art clustering and de-clustering phases, the design complexity was reduced to enhance the placement algorithm efficiency and capacity. The 3-D floorplanning phase solved the layer assignment problem and controlled the number of vertical vias. The vertical via mapping transformed the 3-D placement problem to a set of 2-D placement sub-problems, which not only simplifies the original 3-D placement problem, but also generates the vertical via assignment solution for the routing phase. The design optimizes both the wire length and the thermal load in the floorplan and placement phases to improve the performance and reliability of 3-D integrate circuits. Experiments on IBM benchmarks show that the total wire length is reduced from 15% to 35% relative to 2-D placement with two to four stacked layers, with the number of vertical vias minimized to satisfy a pre-defined upper bound constraint. The maximum temperature is reduced by 16% with two-stage optimization on four stacked layers. 展开更多
关键词 HIERARCHICAL three dimensional 3-D) mixed mode placement vertical via integrate circuit
原文传递
三维微电子学综述 被引量:7
15
作者 李文石 钱敏 黄秋萍 《微电子学》 CAS CSCD 北大核心 2004年第3期227-230,共4页
 三维微电子学主要研究三维集成电路的设计与制造。文章讨论了三维集成电路的概念、发明思想、结构、优点、制造及其挑战和应用等。三维微电子技术必将成为未来发展的新兴技术。
关键词 三维微电子学 三维集成电路 集成电路工艺
下载PDF
三维结构可重构阵列在线自诊断与容错方法 被引量:11
16
作者 王敏 王友仁 +1 位作者 张砦 孔德明 《仪器仪表学报》 EI CAS CSCD 北大核心 2013年第3期650-656,共7页
目前传统的可重构阵列容错方法一般需要控制器来完成重构控制,容错重构控制算法复杂,资源利用率不高,因此提出一种面向三维结构的可重构阵列分布式自主容错方法。系统由相同的电子细胞以三维结构组成,每个细胞能进行故障定位且实现故障... 目前传统的可重构阵列容错方法一般需要控制器来完成重构控制,容错重构控制算法复杂,资源利用率不高,因此提出一种面向三维结构的可重构阵列分布式自主容错方法。系统由相同的电子细胞以三维结构组成,每个细胞能进行故障定位且实现故障自修复;采用基于广度优先布线算法的重布线机制在三维细胞阵列中寻找最近冗余细胞;冗余细胞按比例均匀分布在三维阵列中,可增加容错重构控制过程的灵活性,缩短重构时间。以4位并行乘法器电路为例,对可重构阵列的功能和容错能力进行验证,实验结果表明该方法能够实现三维可重构阵列分布式自主故障诊断与修复,可容错多次故障且容错重构时间短,冗余资源利用率高。 展开更多
关键词 三维集成电路 容错可重构阵列 自诊断 自主容错 重布线 三维容错路由算法
下载PDF
二维和三维集成电路的热阻计算 被引量:4
17
作者 李文石 《微电子学》 CAS CSCD 北大核心 2005年第5期482-485,共4页
聚焦芯片功耗密度、水平互连焦耳热和垂直互连焦耳热三种温升因素,构造二维和三维集成电路的热阻分析模型,基于2003年国际半导体技术发展路线图(2003-ITRS),计算二维和三维集成电路的热阻和温升参数,给出热阻二维图和温升三维图。分析... 聚焦芯片功耗密度、水平互连焦耳热和垂直互连焦耳热三种温升因素,构造二维和三维集成电路的热阻分析模型,基于2003年国际半导体技术发展路线图(2003-ITRS),计算二维和三维集成电路的热阻和温升参数,给出热阻二维图和温升三维图。分析结论为热阻参数是严重影响二维和三维集成电路发展的瓶颈。 展开更多
关键词 热阻 温升 模型 三维集成电路
下载PDF
低介电常数聚喹啉衍生物薄膜的合成与表征(英文) 被引量:2
18
作者 赵雄燕 《物理化学学报》 SCIE CAS CSCD 北大核心 2010年第4期1164-1170,共7页
采用等离子体聚合技术合成了一种新型的低介电常数聚喹啉衍生物薄膜:聚3-氰基喹啉(PP3QCN)薄膜.借助于傅里叶变换红外光谱(FT-IR)、紫外-可见(UV-Vis)吸收光谱、X光电子能谱(XPS)和原子力显微镜(AFM)对薄膜结构进行了系统表征.结果表明... 采用等离子体聚合技术合成了一种新型的低介电常数聚喹啉衍生物薄膜:聚3-氰基喹啉(PP3QCN)薄膜.借助于傅里叶变换红外光谱(FT-IR)、紫外-可见(UV-Vis)吸收光谱、X光电子能谱(XPS)和原子力显微镜(AFM)对薄膜结构进行了系统表征.结果表明,等离子体聚合条件对沉积膜的化学结构、表面组成、膜形态以及介电性能均有影响.在较低的等离子体放电功率(10W)条件下,可得到具有较高芳环保留率和较大π-共轭体系的高质量聚3-氰基喹啉薄膜材料;而在较高功率(25W)条件下,聚合过程中会出现比较严重的单体分子破碎,形成较多非π-共轭体系的聚合物,从而导致聚3-氰基喹啉的共轭度降低.聚3-氰基喹啉薄膜的介电性能测试结果表明,低放电功率(10W)条件下制得的聚3-氰基喹啉薄膜具有比较低的介电常数值,仅为2.45. 展开更多
关键词 等离子体聚合 低介电常数 3-氰基喹啉 集成电路
下载PDF
基于链式的信号转移冗余TSV方案
19
作者 王伟 张欢 +3 位作者 方芳 陈田 刘军 汪秀敏 《计算机工程与应用》 CSCD 2014年第17期34-39,154,共7页
三维集成电路(3D IC)带来了诸多的益处,譬如高带宽,低功耗,外形尺寸小。基于硅通孔的三维集成得到了行业的广泛采用。然而,硅通孔的制造过程引入了新的缺陷机制。一个失效的硅通孔会使整个芯片失效,会极大地增加成本。增加冗余硅通孔修... 三维集成电路(3D IC)带来了诸多的益处,譬如高带宽,低功耗,外形尺寸小。基于硅通孔的三维集成得到了行业的广泛采用。然而,硅通孔的制造过程引入了新的缺陷机制。一个失效的硅通孔会使整个芯片失效,会极大地增加成本。增加冗余硅通孔修复失效硅通孔可能是最有效的提高良率的方法,但是却带来了面积成本。提出了一种基于链式的信号转移冗余方案,输入端从下一分组选择信号硅通孔传输信号。在基于概率模型下,提出的冗余结构良率可以达到99%,同时可以减少冗余TSV的数目。 展开更多
关键词 三维集成电路 硅通孔 容错 THREE-DIMENSIONAL integrated circuits(3D IC)
下载PDF
2~6GHz高性能开关滤波器组MMIC
20
作者 李远鹏 陈长友 刘会东 《半导体技术》 CAS 北大核心 2023年第8期706-712,共7页
基于0.25μm GaAs E/D赝配高电子迁移率晶体管(PHEMT)工艺,设计了一款2~6 GHz开关滤波器组单片微波集成电路(MMIC)芯片。片上集成了8路带通滤波器、输入、输出单刀八掷(SP8T)开关、3-8译码器和驱动器。通过输入、输出SP8T开关进行通道选... 基于0.25μm GaAs E/D赝配高电子迁移率晶体管(PHEMT)工艺,设计了一款2~6 GHz开关滤波器组单片微波集成电路(MMIC)芯片。片上集成了8路带通滤波器、输入、输出单刀八掷(SP8T)开关、3-8译码器和驱动器。通过输入、输出SP8T开关进行通道选择,采用三串两并结构,提高了通道间隔离度。带通滤波器组采用多级LC谐振器实现,最小、最大相对带宽分别为18%和100%,可用于宽带及窄带滤波器设计,具有通带插入损耗小,阻带抑制度高等优点。末级级联低通滤波器,实现远端寄生通带抑制大于35 dBc。在片探针测试结果显示,该开关滤波器组芯片在2~6 GHz频率范围内,每个带通滤波器的插入损耗均小于8.5 dB,阻带衰减为40 dB。该芯片具有通道多、功能复杂、集成度高的特点,可应用于宽带雷达系统进行频率预选。 展开更多
关键词 赝配高电子迁移率晶体管(PHEMT) 单片微波集成电路(MMIC) 带通滤波器 低通滤波器 单刀八掷(SP8T)开关 3-8译码器 驱动器
下载PDF
上一页 1 2 下一页 到第
使用帮助 返回顶部