Effect of Valence Band Tail Width on the Open Circuit Voltage of P3HT:PCBM Bulk Heterojunction Solar Cell:AMPS-1D Simulation Study

The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.

Epitaxial quasi-2D/3D hybrid perovskite heterojunctions for photodetector with enhanced detectivity and stability

Although numerous metal halide perovskite materials have been investigated in the field of optoelectronic,the development of perovskite heterojunctions with exotic structures is still rare.Herein,we report the epitaxial growth of quasi-two-dimensional(Q-2D)perovskites on methylammonium lead iodide(MAPbI_(3))single crystals to form perovskite heterojunctions with interfacial bonding.The MAPbI_(3)adjacent to epitaxial Q-2D perovskite shows blue shifted photoluminescence with shortened lifetime,which becomes significant with the reduced layer number of the Q-2D perovskites.Our findings suggest the presence of an interfacial strain gradient leading to enhanced photocarrier separation.Accordingly,compared to the MAPbI_(3)single crystal detector,the BA_(2)MAPb_(2)I_(7)/MAPbI_(3)(BA:n-butylamine)heterojunction-based photodetector demonstrates a bandpass detecting property and exhibits 5 times enhanced external quantum efficiency and 83 times enhanced specific detectivity(D*=3.26×10^(11)Jones).Remarkably,the unencapsulated BA_(2)MAPb_(2)I_(7)/MAPbI_(3)heterojunction is stable in ambient condition for>300 days.The Q-2D/3D heterojunction shows suppressed ion inter-diffusion due to the presence of Q-2D phase.

Influence of Halide Choice on Formation of Low-Dimensional Perovskite Interlayer in Efficient Perovskite Solar Cells

Recent advances in heterojunction and interfacial engineering of perovskite solar cells(PSCs)have enabled great progress in developing highly efficient and stable devices.Nevertheless,the effect of halide choice on the formation mechanism,crystallography,and photoelectric properties of the lowdimensional phase still requires further detailed study.In this work,we present key insights into the significance of halide choice when designing passivation strategies comprising large organic spacer salts,clarifying the effect of anions on the formation of quasi-2D/3D heterojunctions.To demonstrate the importance of halide influences,we employ novel neo-pentylammonium halide salts with different halide anions(neoPAX,X=I,Br,or Cl).We find that regardless of halide selection,iodide-based(neoPA)_(2)(FA)_((n-1))PbnI_((3n+1))phases are formed above the perovskite substrate,while the added halide anions diffuse and passivate the perovskite bulk.In addition,we also find the halide choice has an influence on the degree of dimensionality(n).Comparing the three halides,we find that chloride-based salts exhibit superior crystallographic,enhanced carrier transport,and extraction compared to the iodide and bromide analogs.As a result,we report high power conversion efficiency in quasi-2D/3D PSCs,which are optimal when using chloride salts,reaching up to 23.35%,and improving long-term stability.

Integrating surface and interface engineering to improve optoelectronic performance and environmental stability of MXenebased heterojunction towards broadband photodetection

Two-/three-dimensional(2D/3D)heterojunction-based photodetectors have attracted much attention due to their highly efficient photoelectric conversion driven by the built-in electric field for high-speed photoresponse.However,a large dark current induced by unexpected surface states at the interface between 2D materials and 3D bulks is widely observed in such structures,greatly degrading their optoelectronic performance.Herein,a heterojunction of proton acid HCl treated MXene(H-MXene)/TiO_(2)/Si via integrating surface and interface engineering is fabricated,which exhibits decreased dark current and improved environmental stability.A feasible strategy to optimize the interface properties between MXene and Si is proposed by an in-situ oxidation process of MXene into TiO_(2),resulting in a suppressed dark current as well as high specific detectivity.Benefitting from the enhanced light absorption of MXene on the bulk Si substrate,the photoresponse of as-fabricated devices in the near-infrared region is also elevated.Moreover,the treatment of proton acid HCl on the surface of MXene brings better conductivity and environmental stability due to the decreased layer spacing of MXene,which is further confirmed by both experimental and theoretical methods.This work opens a unique way to comprehensively boost the optoelectronic performance of MXene-based photodetectors.