Ablation threshold is an important concept in the study of femtosecond laser micro-and nano-machining.In this paper,the ablation experiments of three kinds of surface roughness 4H-Si C substrates irradiated by femtose...Ablation threshold is an important concept in the study of femtosecond laser micro-and nano-machining.In this paper,the ablation experiments of three kinds of surface roughness 4H-Si C substrates irradiated by femtosecond laser were carried out.The feature thresholds were systematically measured for three surface roughness Si C substrates and found in the modification and annealing regions ranging from coincidence(R_(a)=0.5 nm)to a clear demarcation(R_(a)=5.5 nm),eventually being difficult to identify the presence of the former(R_(a)=89 nm).Under multi-pulse laser irradiation,oriented ripple structures were generated in the annealing region,where deep subwavelength ripples(about 110 nm,Λ≈0.2λ)can be generated above substrates with surface roughness higher than 5.5 nm.We investigated the effect of surface roughness on the ablation morphology,ablation threshold,and periodic structures of femtosecond laser ablation of 4H-Si C substrates,while the ablation threshold was tended to decrease and stabilize with the increase of pulse number N≥500.展开更多
Single crystal silicon carbide(SiC)is widely used for optoelectronics applications.Due to the anisotropic characteristics of single crystal materials,the C face and Si face of single crystal SiC have different physica...Single crystal silicon carbide(SiC)is widely used for optoelectronics applications.Due to the anisotropic characteristics of single crystal materials,the C face and Si face of single crystal SiC have different physical properties,which may fit for particular application purposes.This paper presents an investigation of the material removal and associated subsurface defects in a set of scratching tests on the C face and Si face of 4H-SiC and 6H-SiC materials using molecular dynamics simulations.The investigation reveals that the sample material deformation consists of plastic,amorphous transformations and dislocation slips that may be prone to brittle split.The results showed that the material removal at the C face is more effective with less amorphous deformation than that at the Si face.Such a phenomenon in scratching relates to the dislocations on the basal plane(0001)of the SiC crystal.Subsurface defects were reduced by applying scratching cut depths equal to integer multiples of a half molecular lattice thickness,which formed a foundation for selecting machining control parameters for the best surface quality.展开更多
The fact that traditional semiconductors have almost reached their performance limits in high power applications,is leading to failure in high power devices.This failure results from self-heating effects,leading to hi...The fact that traditional semiconductors have almost reached their performance limits in high power applications,is leading to failure in high power devices.This failure results from self-heating effects,leading to higher temperature and a breakdown of the electrical contact.The good thermal and mechanical properties of 4 H-SiC and Ti_(3)SiC_(2) and their good performance at high temperatures make them good candidates for high power applications.In order to improve the performance of electrical contacts,a thermo-mechanical simulation was carried out using the finite element method to study the self-heating effects in a high power PN diode made of a 4 H-SiC substrate with a Ti_(3)SiC_(2) electrical contact and Al_(3)Ti metallization.The three-dimensional model took into account the temperature dependency of several thermal and mechanical properties of the different materials to improve calculation accuracy.To simulate the self-heating,the power loss in the diode was calculated from the corresponding direct I-V characteristic.In addition,the interfacial thermal resistances(ITR)between the different layers were varied and studied in the thermo-mechanical investigation,in sequence to determine their effects on the heat dissipation and the resulting stresses in the model.The results show that for realistic ITR values,the ITR barely affects heat diffusion mechanical stresses of the model.Whereas,ITR may cause serious problem to the functionality and the efficiency of some electronic components.On the other hand,extremely large ITR leads to a decrease in the thermal stress in the diode.Good control on the ITR may help to improve the performance of high-power devices in the future,in addition to providing more efficient electrical contacts.展开更多
In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors （MESFETs） on high purity semi-insulating substrates. DC and small-signal measurements ...In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors （MESFETs） on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H-SiC MESFETs with 100 #m gate periphery. At 30 V drain voltage, the maximum current density is 440 mA/mm and the maximum transconductance is 33 mS/mm. For the continuous wave （CW） at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W/mm, with a gain of 12 dB and power-added efficiency of 33.7%. The cut-off frequency （fT） and the maximum frequency （fmax） are 9 GHz and 24.9 GHz respectively. The simulation results of fT and fmax are 11.4 GHz and 38.6 GHz respectively.展开更多
4H silicon carbide(4H-SiC)has gained a great success in high-power electronics,owing to its advantages of wide bandgap,high breakdown electric field strength,high carrier mobility,and high thermal conductivity.Conside...4H silicon carbide(4H-SiC)has gained a great success in high-power electronics,owing to its advantages of wide bandgap,high breakdown electric field strength,high carrier mobility,and high thermal conductivity.Considering the high carrier mobility and high stability of 4H-SiC,4H-SiC has great potential in the field of photoelectrochemical(PEC)water splitting.In this work,we demonstrate the irradiation-resistant PEC water splitting based on nanoporous 4H-SiC arrays.A new two-step anodizing approach is adopted to prepare 4H-SiC nanoporous arrays with different porosity,that is,a constant low-voltage etching followed by a pulsed high-voltage etching.The constant-voltage etching and pulsed-voltage etching are adopted to control the diameter of the nanopores and the depth of the nanoporous arrays,respectively.It is found that the nanoporous arrays with medium porosity has the highest PEC current,because of the enhanced light absorption and the optimized transportation of charge carriers along the walls of the nanoporous arrays.The performance of the PEC water splitting of the nanoporous arrays is stable after the electron irradiation with the dose of 800 and 1600 k Gy,which indicates that 4H-SiC nanoporous arrays has great potential in the PEC water splitting under harsh environments.展开更多
Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to ...Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.展开更多
基金Project(52075103)supported by the National Natural Science Foundation of ChinaProject(2020B1515120058)supported by the Key Project of Regional Joint Fund of Guangdong Basic and Applied Basic Research Foundation,China。
文摘Ablation threshold is an important concept in the study of femtosecond laser micro-and nano-machining.In this paper,the ablation experiments of three kinds of surface roughness 4H-Si C substrates irradiated by femtosecond laser were carried out.The feature thresholds were systematically measured for three surface roughness Si C substrates and found in the modification and annealing regions ranging from coincidence(R_(a)=0.5 nm)to a clear demarcation(R_(a)=5.5 nm),eventually being difficult to identify the presence of the former(R_(a)=89 nm).Under multi-pulse laser irradiation,oriented ripple structures were generated in the annealing region,where deep subwavelength ripples(about 110 nm,Λ≈0.2λ)can be generated above substrates with surface roughness higher than 5.5 nm.We investigated the effect of surface roughness on the ablation morphology,ablation threshold,and periodic structures of femtosecond laser ablation of 4H-Si C substrates,while the ablation threshold was tended to decrease and stabilize with the increase of pulse number N≥500.
基金financial support from National Natural Science Foundation of China(Grant No.51835004 and 51575197)Huaqiao University International Cultivation Program for Outstanding Postgraduates and Subsidized Projec for Postgraduates’Innovative Fund in Scientific Research of Huaqiao University(No.18011080010)。
文摘Single crystal silicon carbide(SiC)is widely used for optoelectronics applications.Due to the anisotropic characteristics of single crystal materials,the C face and Si face of single crystal SiC have different physical properties,which may fit for particular application purposes.This paper presents an investigation of the material removal and associated subsurface defects in a set of scratching tests on the C face and Si face of 4H-SiC and 6H-SiC materials using molecular dynamics simulations.The investigation reveals that the sample material deformation consists of plastic,amorphous transformations and dislocation slips that may be prone to brittle split.The results showed that the material removal at the C face is more effective with less amorphous deformation than that at the Si face.Such a phenomenon in scratching relates to the dislocations on the basal plane(0001)of the SiC crystal.Subsurface defects were reduced by applying scratching cut depths equal to integer multiples of a half molecular lattice thickness,which formed a foundation for selecting machining control parameters for the best surface quality.
文摘The fact that traditional semiconductors have almost reached their performance limits in high power applications,is leading to failure in high power devices.This failure results from self-heating effects,leading to higher temperature and a breakdown of the electrical contact.The good thermal and mechanical properties of 4 H-SiC and Ti_(3)SiC_(2) and their good performance at high temperatures make them good candidates for high power applications.In order to improve the performance of electrical contacts,a thermo-mechanical simulation was carried out using the finite element method to study the self-heating effects in a high power PN diode made of a 4 H-SiC substrate with a Ti_(3)SiC_(2) electrical contact and Al_(3)Ti metallization.The three-dimensional model took into account the temperature dependency of several thermal and mechanical properties of the different materials to improve calculation accuracy.To simulate the self-heating,the power loss in the diode was calculated from the corresponding direct I-V characteristic.In addition,the interfacial thermal resistances(ITR)between the different layers were varied and studied in the thermo-mechanical investigation,in sequence to determine their effects on the heat dissipation and the resulting stresses in the model.The results show that for realistic ITR values,the ITR barely affects heat diffusion mechanical stresses of the model.Whereas,ITR may cause serious problem to the functionality and the efficiency of some electronic components.On the other hand,extremely large ITR leads to a decrease in the thermal stress in the diode.Good control on the ITR may help to improve the performance of high-power devices in the future,in addition to providing more efficient electrical contacts.
文摘In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors （MESFETs） on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H-SiC MESFETs with 100 #m gate periphery. At 30 V drain voltage, the maximum current density is 440 mA/mm and the maximum transconductance is 33 mS/mm. For the continuous wave （CW） at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W/mm, with a gain of 12 dB and power-added efficiency of 33.7%. The cut-off frequency （fT） and the maximum frequency （fmax） are 9 GHz and 24.9 GHz respectively. The simulation results of fT and fmax are 11.4 GHz and 38.6 GHz respectively.
基金supported by National Natural Science Foundation of China(Grant Nos.62274143 and U22A2075)Hangzhou Joint Funds of the Zhejiang Provincial Natural Science Foundation of China(Grant No.LHZSD24E020001)+3 种基金Partial support was provided by Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou(Grant No.TD2022012)Fundamental Research Funds for the Central Universities(Grant No.226-2022-00200)Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005)the Open Fund of Zhejiang Provincial Key Laboratory of Wide Bandgap Semiconductors。
文摘4H silicon carbide(4H-SiC)has gained a great success in high-power electronics,owing to its advantages of wide bandgap,high breakdown electric field strength,high carrier mobility,and high thermal conductivity.Considering the high carrier mobility and high stability of 4H-SiC,4H-SiC has great potential in the field of photoelectrochemical(PEC)water splitting.In this work,we demonstrate the irradiation-resistant PEC water splitting based on nanoporous 4H-SiC arrays.A new two-step anodizing approach is adopted to prepare 4H-SiC nanoporous arrays with different porosity,that is,a constant low-voltage etching followed by a pulsed high-voltage etching.The constant-voltage etching and pulsed-voltage etching are adopted to control the diameter of the nanopores and the depth of the nanoporous arrays,respectively.It is found that the nanoporous arrays with medium porosity has the highest PEC current,because of the enhanced light absorption and the optimized transportation of charge carriers along the walls of the nanoporous arrays.The performance of the PEC water splitting of the nanoporous arrays is stable after the electron irradiation with the dose of 800 and 1600 k Gy,which indicates that 4H-SiC nanoporous arrays has great potential in the PEC water splitting under harsh environments.
基金supported by the Open Fund(2022E10015)of the Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced Semiconductors,ZJU-Hangzhou Global Scientific and Technological Innovation Center。
文摘Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.
