The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradati...The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradations on ir- radiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation （STI）. The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.展开更多
The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width6...The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.展开更多
随着Si片尺寸加大和特征尺寸的缩小,对Si片的洁净程度、表面的化学态以及表面缺陷等要求越来越高。针对300 mm 65 nm Cu互连晶片清洗后表面常出现边缘和辐射状污染的问题。在理论分析的基础上,研究了缩短化学药液喷射臂和去离子水喷射...随着Si片尺寸加大和特征尺寸的缩小,对Si片的洁净程度、表面的化学态以及表面缺陷等要求越来越高。针对300 mm 65 nm Cu互连晶片清洗后表面常出现边缘和辐射状污染的问题。在理论分析的基础上,研究了缩短化学药液喷射臂和去离子水喷射臂的间隔时间,实现不同喷射臂无间隔连续喷射技术,并优化化学药液喷射臂的摆臂速度、轨迹和起始终止角度等参数。采用北京七星华创电子股份有限公司自主研发的300 mm 65 nm Cu互连单片清洗机进行工艺实验,结果表明:清洗后晶片表面无边缘和辐射状污染,清洗后晶片表面临界颗粒直径0.12μm,临界颗粒数每片30个;临界尺寸变化不大于2%。展开更多
We report on irradiation induced single event upset（SEU） by high-energy protons and heavy ions. The experiments were performed at the Paul Scherer Institute, and heavy ions at the SEE irradiating Facility on the HI-...We report on irradiation induced single event upset（SEU） by high-energy protons and heavy ions. The experiments were performed at the Paul Scherer Institute, and heavy ions at the SEE irradiating Facility on the HI-13 Tandem Accelerator in China＇s Institute of Atomic Energy, Beijing and the Heavy Ion Research Facility in Lanzhou in the Institute of Modern Physics, Chinese Academy of Sciences. The results of proton and heavy ions induced（SEU） in 65 nm bulk silicon CMOS SRAMS are discussed and the prediction on several typical orbits are presented.展开更多
A register file（RF） with 32×32 capacity and 4-read 2-write（4R2W） ports is presented and analyzed in detail.A new output structure using a MUX and a latch is proposed.It eliminates any dynamic or analog circui...A register file（RF） with 32×32 capacity and 4-read 2-write（4R2W） ports is presented and analyzed in detail.A new output structure using a MUX and a latch is proposed.It eliminates any dynamic or analog circuit in the read path,and thus it can improve robustness and reduce power at the same time.We also simplify the timing sequence due to the output scheme.The simplified timing circuit not only cuts down the power but also improves the robustness.In addition,less power is achieved when successive read of＂0＂or＂1＂is performed.The RF has been fabricated in TSMC 65 nm technology,and the chip test demonstrates that it can operate at 0.8 GHz,consuming 7.2 mW at 1.2 V.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11475255,U1532261 and 11505282
文摘The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradations on ir- radiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation （STI）. The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11605282,11505282 and U1532261the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15
文摘The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.
文摘随着Si片尺寸加大和特征尺寸的缩小,对Si片的洁净程度、表面的化学态以及表面缺陷等要求越来越高。针对300 mm 65 nm Cu互连晶片清洗后表面常出现边缘和辐射状污染的问题。在理论分析的基础上,研究了缩短化学药液喷射臂和去离子水喷射臂的间隔时间,实现不同喷射臂无间隔连续喷射技术,并优化化学药液喷射臂的摆臂速度、轨迹和起始终止角度等参数。采用北京七星华创电子股份有限公司自主研发的300 mm 65 nm Cu互连单片清洗机进行工艺实验,结果表明:清洗后晶片表面无边缘和辐射状污染,清洗后晶片表面临界颗粒直径0.12μm,临界颗粒数每片30个;临界尺寸变化不大于2%。
文摘We report on irradiation induced single event upset（SEU） by high-energy protons and heavy ions. The experiments were performed at the Paul Scherer Institute, and heavy ions at the SEE irradiating Facility on the HI-13 Tandem Accelerator in China＇s Institute of Atomic Energy, Beijing and the Heavy Ion Research Facility in Lanzhou in the Institute of Modern Physics, Chinese Academy of Sciences. The results of proton and heavy ions induced（SEU） in 65 nm bulk silicon CMOS SRAMS are discussed and the prediction on several typical orbits are presented.
基金Project supported by the National Significant Science and Technology Projects(No.01-Special-2010ZX01030-001-001-03)
文摘A register file（RF） with 32×32 capacity and 4-read 2-write（4R2W） ports is presented and analyzed in detail.A new output structure using a MUX and a latch is proposed.It eliminates any dynamic or analog circuit in the read path,and thus it can improve robustness and reduce power at the same time.We also simplify the timing sequence due to the output scheme.The simplified timing circuit not only cuts down the power but also improves the robustness.In addition,less power is achieved when successive read of＂0＂or＂1＂is performed.The RF has been fabricated in TSMC 65 nm technology,and the chip test demonstrates that it can operate at 0.8 GHz,consuming 7.2 mW at 1.2 V.
