In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally fallin...In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.展开更多
We present a continuous-wave squeezed vacuum generation system at a telecommunication wavelength of 1.3 μm. By employing a home-made single-frequency Nd：YVO4 laser with dual wavelength outputs as the pump source, vi...We present a continuous-wave squeezed vacuum generation system at a telecommunication wavelength of 1.3 μm. By employing a home-made single-frequency Nd：YVO4 laser with dual wavelength outputs as the pump source, via an optical parameter oscillator based on periodically poled KTR a squeezed vacuum of 6.1 dB＋0.1 dB below the shot noise limit at 1342 nm is experimentally measured. This system could be utilized for demonstrating practical quantum information networks.展开更多
We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well str...We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well structure tensile AlInGaAs are used as barriers to partially compensate for the significant compressive strain in the wells, the strain compensation effects are confirmed by x-ray measurement. The photoluminescence spectra of the sample are dominated by the excitonic recombination peak in the whole temperature range. The thermal quenching, peak energy shift and line-width broadening of the PL spectra are analysed in detail, the mechanisms are discussed.展开更多
This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing a...This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained fromthe GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors（SESAM） in the cavity.展开更多
Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of ...Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of Yb^3＋ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb^3＋ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb^3＋ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.展开更多
We report on the generation of a squeezing vacuum at 1.55 μm using an optical parametric amplifier based on periodically poled LiNbO 3.Using three specifically designed narrow linewidth mode cleaners as the spatial m...We report on the generation of a squeezing vacuum at 1.55 μm using an optical parametric amplifier based on periodically poled LiNbO 3.Using three specifically designed narrow linewidth mode cleaners as the spatial mode and noise filter of the laser at 1.55 μm and 775 nm,the squeezed vacuum of up to 3.0 dB below the shot noise level at 1.55 μm is experimentally obtained.This system is compatible with standard telecommunication optical fibers,and will be useful for continuous variable long-distance quantum communication and distributed quantum computing.展开更多
Development of a high power fiber laser at special waveband,which is difficult to achieve by conventional rare-earth-doped fibers,is a significant challenge.One of the most common methods for achieving lasing at speci...Development of a high power fiber laser at special waveband,which is difficult to achieve by conventional rare-earth-doped fibers,is a significant challenge.One of the most common methods for achieving lasing at special wavelength is Raman conversion.Phosphorus-doped fiber(PDF),due to the phosphorus-related large frequency shift Raman peak at 40 THz,is a great choice for large frequency shift Raman conversion.Here,by adopting 150 m large mode area triple-clad PDF as Raman gain medium,and a novel wavelength-selective feedback mechanism to suppress the silica-related Raman emission,we build a high power cladding-pumped Raman fiber laser at 1.2μm waveband.A Raman signal with power up to 735.8 W at 1252.7 nm is obtained.To the best of our knowledge,this is the highest output power ever reported for fiber lasers at 1.2μm waveband.Moreover,by tuning the wavelength of the pump source,a tunable Raman output of more than 450 W over a wavelength range of 1240.6–1252.7 nm is demonstrated.This work proves PDF’s advantage in high power large frequency shift Raman conversion with a cladding pump scheme,thus providing a good solution for a high power laser source at special waveband.展开更多
基金funded by the Key Program of the National Natural Science Foundation of China(Grant No.62035001)the International Partnership Program of Chinese Academy of Sciences(No.18123KYSB20210013)the Shanghai Science and Technology Innovation Action Plan(No.22dz208700).
文摘In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.
基金supported by the National Basic Research Program of China (Grant No. 2010CB923101)the National Natural Science Foundation of China (Grant Nos. 61008001 and 61227015)the Natural Science Foundation of Shanxi Province, China (Grant No. 2011021003-2)
文摘We present a continuous-wave squeezed vacuum generation system at a telecommunication wavelength of 1.3 μm. By employing a home-made single-frequency Nd：YVO4 laser with dual wavelength outputs as the pump source, via an optical parameter oscillator based on periodically poled KTR a squeezed vacuum of 6.1 dB＋0.1 dB below the shot noise limit at 1342 nm is experimentally measured. This system could be utilized for demonstrating practical quantum information networks.
文摘We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well structure tensile AlInGaAs are used as barriers to partially compensate for the significant compressive strain in the wells, the strain compensation effects are confirmed by x-ray measurement. The photoluminescence spectra of the sample are dominated by the excitonic recombination peak in the whole temperature range. The thermal quenching, peak energy shift and line-width broadening of the PL spectra are analysed in detail, the mechanisms are discussed.
基金We are grateful for financial supports from the Major Program of National Natural Science Foundation of China （61790584）.
文摘This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained fromthe GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors（SESAM） in the cavity.
文摘Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of Yb^3＋ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb^3＋ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb^3＋ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60878003)the Science Foundation for Excellent Research Team of the National Natural Science Foundation of China (Grant No. 61121064)the National Basic Research Program of China (Grant No. 2010CB923101)
文摘We report on the generation of a squeezing vacuum at 1.55 μm using an optical parametric amplifier based on periodically poled LiNbO 3.Using three specifically designed narrow linewidth mode cleaners as the spatial mode and noise filter of the laser at 1.55 μm and 775 nm,the squeezed vacuum of up to 3.0 dB below the shot noise level at 1.55 μm is experimentally obtained.This system is compatible with standard telecommunication optical fibers,and will be useful for continuous variable long-distance quantum communication and distributed quantum computing.
基金supported by the National Natural Science Foundation of China(NSFC)(Grant Nos.61635005,61905284,and 62305391)the National Postdoctoral Program for Innovative Talents(No.BX20190063).
文摘Development of a high power fiber laser at special waveband,which is difficult to achieve by conventional rare-earth-doped fibers,is a significant challenge.One of the most common methods for achieving lasing at special wavelength is Raman conversion.Phosphorus-doped fiber(PDF),due to the phosphorus-related large frequency shift Raman peak at 40 THz,is a great choice for large frequency shift Raman conversion.Here,by adopting 150 m large mode area triple-clad PDF as Raman gain medium,and a novel wavelength-selective feedback mechanism to suppress the silica-related Raman emission,we build a high power cladding-pumped Raman fiber laser at 1.2μm waveband.A Raman signal with power up to 735.8 W at 1252.7 nm is obtained.To the best of our knowledge,this is the highest output power ever reported for fiber lasers at 1.2μm waveband.Moreover,by tuning the wavelength of the pump source,a tunable Raman output of more than 450 W over a wavelength range of 1240.6–1252.7 nm is demonstrated.This work proves PDF’s advantage in high power large frequency shift Raman conversion with a cladding pump scheme,thus providing a good solution for a high power laser source at special waveband.
