As a key assembly in the 5-axis CNC machine tools, positioning precision of the A-axis directly affects the machining accuracy and surface quality of the parts. First of all, mechanical structure and control system of...As a key assembly in the 5-axis CNC machine tools, positioning precision of the A-axis directly affects the machining accuracy and surface quality of the parts. First of all, mechanical structure and control system of the A-axis are designed. Then, considering the influence of nonlin- ear friction, backlash, unmodeled dynamics, uncertain cutting force and other external disturbance on the control precision of the A-axis, an adaptive sliding mode control （ASMC） based on extended state observer （ESO） is proposed. ESO is employed to estimate the state variables of the unknown system and an adaptive law is adopted to compensate for the input dead-zone caused by friction, backlash and other nonlinear characteristics. Finally, stability of the closed-loop system is guaran- teed by the Lyapunov theory. Positioning experiments illustrate the perfect estimation of ESO and the stronger anti-interference and robustness of ASMC, which can improve the control precision of the A-axis by about 40 times. Processing experiments show that the ASMC can reduce the waviness, averaKe error and roughness of the nrocessed surface by 35.63%, 31.31% and 30.35%, respectively.展开更多
In this study, we investigate the effects of Ga N cap layer thickness on the two-dimensional electron gas（2DEG）electron density and 2DEG electron mobility of Al N/Ga N heterostructures by using the temperature-depen...In this study, we investigate the effects of Ga N cap layer thickness on the two-dimensional electron gas（2DEG）electron density and 2DEG electron mobility of Al N/Ga N heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the Ga N cap layer thickness of an Al N/Ga N heterostructure has influences on the 2DEG electron density and the electron mobility. For the Al N/Ga N heterostructures with a 3-nm Al N barrier layer, the optimized thickness of the Ga N cap layer is around 4 nm and the strained a-axis lattice constant of the Al N barrier layer is less than that of Ga N.展开更多
基金supported by National Science and Technology Major Project of the Ministry of Science and Technology of China (No. 2013ZX04001081)
文摘As a key assembly in the 5-axis CNC machine tools, positioning precision of the A-axis directly affects the machining accuracy and surface quality of the parts. First of all, mechanical structure and control system of the A-axis are designed. Then, considering the influence of nonlin- ear friction, backlash, unmodeled dynamics, uncertain cutting force and other external disturbance on the control precision of the A-axis, an adaptive sliding mode control （ASMC） based on extended state observer （ESO） is proposed. ESO is employed to estimate the state variables of the unknown system and an adaptive law is adopted to compensate for the input dead-zone caused by friction, backlash and other nonlinear characteristics. Finally, stability of the closed-loop system is guaran- teed by the Lyapunov theory. Positioning experiments illustrate the perfect estimation of ESO and the stronger anti-interference and robustness of ASMC, which can improve the control precision of the A-axis by about 40 times. Processing experiments show that the ASMC can reduce the waviness, averaKe error and roughness of the nrocessed surface by 35.63%, 31.31% and 30.35%, respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11174182 and 61306113)the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20110131110005)
文摘In this study, we investigate the effects of Ga N cap layer thickness on the two-dimensional electron gas（2DEG）electron density and 2DEG electron mobility of Al N/Ga N heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the Ga N cap layer thickness of an Al N/Ga N heterostructure has influences on the 2DEG electron density and the electron mobility. For the Al N/Ga N heterostructures with a 3-nm Al N barrier layer, the optimized thickness of the Ga N cap layer is around 4 nm and the strained a-axis lattice constant of the Al N barrier layer is less than that of Ga N.
