In this communication,we report a synthetic approach to fabricate Y-junction Co nanowires and Y-junction Cu nanowires by AC electrodeposition using a hierarchically designed anodized aluminum oxide template.Morphology...In this communication,we report a synthetic approach to fabricate Y-junction Co nanowires and Y-junction Cu nanowires by AC electrodeposition using a hierarchically designed anodized aluminum oxide template.Morphology study showe that diameters of the stems and branches of the Y-junction nanowires were about 40 nm and 20 nm respectively.Structural analysis indicates that Co nanowires had a mixture of face-center-cubic and hexagonal-close-packed structures,whereas Cu nanowires had a face-center-cubic structure with a <110> texture.The Y-junction Co nanowires exhibited a longitudinal coercivity of 1300 Oe and remnant magnetization of 56%,which was affected by the growth direction and microstructure.The present method can be extended to other metallic systems and thus provides a simple and efficient way to fabricate Y-junction metal nanowires.展开更多
A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 730 °C to form Ga2O·11Al2O3 at the interfaces of...A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 730 °C to form Ga2O·11Al2O3 at the interfaces of a porous anodic aluminum oxide (AAO) template. The prepared Ga2O·11Al2O3 nanonet then served as a Ga2O-stablizing reservoir to fabricate single crystal GaN nanowires. The residual Ga2O3 powder at the surface of the produced Ga2O·11Al2O3 nanonet and the metallic Ga or Ga2O from the Ga2O·11Al2O3 decomposition reacted with ammonia to yield GaN nanowires at 780 °C. The reaction mechanisms were investigated.展开更多
基金financially supported partially by a NSF award CMMI-0825990
文摘In this communication,we report a synthetic approach to fabricate Y-junction Co nanowires and Y-junction Cu nanowires by AC electrodeposition using a hierarchically designed anodized aluminum oxide template.Morphology study showe that diameters of the stems and branches of the Y-junction nanowires were about 40 nm and 20 nm respectively.Structural analysis indicates that Co nanowires had a mixture of face-center-cubic and hexagonal-close-packed structures,whereas Cu nanowires had a face-center-cubic structure with a <110> texture.The Y-junction Co nanowires exhibited a longitudinal coercivity of 1300 Oe and remnant magnetization of 56%,which was affected by the growth direction and microstructure.The present method can be extended to other metallic systems and thus provides a simple and efficient way to fabricate Y-junction metal nanowires.
基金supported by the National Natural Science Foundation of China (Grant Nos. 50821061, 20773001, 20827002)Ministry of Sceince and Technology of China (2006CB806102, 2007CB936202, 2009CB929403)
文摘A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 730 °C to form Ga2O·11Al2O3 at the interfaces of a porous anodic aluminum oxide (AAO) template. The prepared Ga2O·11Al2O3 nanonet then served as a Ga2O-stablizing reservoir to fabricate single crystal GaN nanowires. The residual Ga2O3 powder at the surface of the produced Ga2O·11Al2O3 nanonet and the metallic Ga or Ga2O from the Ga2O·11Al2O3 decomposition reacted with ammonia to yield GaN nanowires at 780 °C. The reaction mechanisms were investigated.
