Schottky diodes with an Ag/n-Si/W/Cu structure and 100μm in diameter were studied.Analyzing the silver metal surface coating on the n-Si substrate using a scanning probe microscopy（SPM） device showed a large number...Schottky diodes with an Ag/n-Si/W/Cu structure and 100μm in diameter were studied.Analyzing the silver metal surface coating on the n-Si substrate using a scanning probe microscopy（SPM） device showed a large number of nano patches in the surface with dimensions of 0 to 100 nm.The potential distribution of the patches revealed that the potential of each patch with the neighboring patches was different.The electrical characteristics of the devices were studied between temperature ranges of 300 and 380 K.When the temperature ideality factor approximately increases,the potential barrier height decreases.The potential barrier height was calculated separately from theⅠ-Ⅴand C-V characteristics.The main reasons for the significant difference between room temperature and higher temperatures were the differences in patch distribution,the different potentials of each patch,and the interactions between them.The effective potential barrier height depended on the degree of inhomogeneity,and thus the operating potential barrier height in the contact surface was smaller than the average value,and the ideality factor was more than unitary.With the increase in the potential value,the ideality factor becomes close to unitary, and with increasing temperatures,the ideality factor is increased.In this case,the maximum potential barrier height accrues at a greater distance from the metal contact.For this reason,at high temperatures the average value of the potential barrier height is smaller.Moreover,with increasing temperature,the ideality factor is increased.展开更多
文摘为了解决扫描探针显微镜(Scanning Probe Microscope,SPM)现有校准方法复杂程度高且存在局限性的问题,提出了一种基于二维标准微尺度正交栅格的SPM校准方法,通过对扫描获取的栅格图像进行互相关/卷积(Cross-correlation/Convolution,CC)滤波,实现对栅距中心坐标的峰值检测。校准的运动几何误差包括x轴和y轴位置偏差Δ_(x)和Δ_(y)、沿x轴和y轴扫描的直线度偏差δy和δx以及两轴之间的正交性偏差γ_(xy)。根据x轴和y轴扫描像素数、扫描范围、标准栅格计量检定节距平均值、栅距平均值计算得出校准因子C_(x)和C_(y)。采用标称节距为10μm的正交栅格样板对原子力显微镜(Atomic Force Microscope,AFM)进行校准实验,结果显示C_(x)和C_(y)分别为0.925和1.050,γ_(xy)为0.015°,该台AFM的校准扩展不确定度为0.33μm(k=2.56)。研究成果对于推动SPM校准标准文件的具体实施和执行具有积极意义,并为SPM仪器研制及性能评估提供了技术参考。
文摘Schottky diodes with an Ag/n-Si/W/Cu structure and 100μm in diameter were studied.Analyzing the silver metal surface coating on the n-Si substrate using a scanning probe microscopy（SPM） device showed a large number of nano patches in the surface with dimensions of 0 to 100 nm.The potential distribution of the patches revealed that the potential of each patch with the neighboring patches was different.The electrical characteristics of the devices were studied between temperature ranges of 300 and 380 K.When the temperature ideality factor approximately increases,the potential barrier height decreases.The potential barrier height was calculated separately from theⅠ-Ⅴand C-V characteristics.The main reasons for the significant difference between room temperature and higher temperatures were the differences in patch distribution,the different potentials of each patch,and the interactions between them.The effective potential barrier height depended on the degree of inhomogeneity,and thus the operating potential barrier height in the contact surface was smaller than the average value,and the ideality factor was more than unitary.With the increase in the potential value,the ideality factor becomes close to unitary, and with increasing temperatures,the ideality factor is increased.In this case,the maximum potential barrier height accrues at a greater distance from the metal contact.For this reason,at high temperatures the average value of the potential barrier height is smaller.Moreover,with increasing temperature,the ideality factor is increased.
