In the last few years,research on advanced ultrafast photonic devices has attracted great interest from laser physicists.As a semiconductor material with excellent nonlinear saturation absorption characteristics,Ga As...In the last few years,research on advanced ultrafast photonic devices has attracted great interest from laser physicists.As a semiconductor material with excellent nonlinear saturation absorption characteristics,Ga As has been used in solidstate and fiber lasers as a mode-locker.However,the pulse widths that have been reported in the searchable published literature are all long and the shortest is tens of picoseconds.Femtosecond pulse widths,desired for a variety of applications,have not yet been reported in Ga As-based pulsed lasers.In this work,we further explore the nonlinear characteristics of Ga As that has been magnetron sputtered onto the surface of a tapered fiber and its application in the generation of femtosecond lasing via effective dispersion optimization and nonlinearity management.With the enhanced interaction between evanescent waves and Ga As nanosheets,mode-locked soliton pulses as short as 830 fs are generated at repetition rates of 4.64 MHz.As far as we know,this is the first time that femtosecond-level pulses have been generated with a Ga As-based saturable absorber.In addition,soliton molecules,including in the dual-pulse state,are also realized under stronger pumping.This work demonstrates that Ga As-based photonic devices have good application prospects in effective polymorphous ultrashort pulsed laser generation.展开更多
GaAs-based nanomaterials are essential for near-infrared nano-photoelectronic devices due to their exceptional optoelectronic properties.However,as the dimensions of GaAs materials decrease,the development of GaAs nan...GaAs-based nanomaterials are essential for near-infrared nano-photoelectronic devices due to their exceptional optoelectronic properties.However,as the dimensions of GaAs materials decrease,the development of GaAs nanowires(NWs)is hindered by type-Ⅱquantum well structures arising from the mixture of zinc blende(ZB)and wurtzite(WZ)phases and surface defects due to the large surface-to-volume ratio.Achieving GaAs-based NWs with high emission efficiency has become a key research focus.In this study,pre-etched silicon substrates were combined with GaAs/AlGaAs core-shell heterostructure to achieve GaAs-based NWs with good perpendicularity,excellent crystal structures,and high emission efficiency by leveraging the shadowing effect and surface passivation.The primary evidence for this includes the prominent free-exciton emission in the variable-temperature spectra and the low thermal activation energy indicated by the variable-power spectra.The findings of this study suggest that the growth method described herein can be employed to enhance the crystal structure and optical properties of otherⅢ-Ⅴlow-dimensional materials,potentially paving the way for future NW devices.展开更多
The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum ...The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.12164030)Young Science and Technology Talents of Inner Mongolia,China(Grant No.NJYT22101)+1 种基金the Central Government Guides Local Science,the Technology Development Fund Projects(Grant No.2023ZY0005)the Science and Technology Plan Projects of Inner Mongolia Autonomous Region of China(Grant No.2023KYPT0012)。
文摘In the last few years,research on advanced ultrafast photonic devices has attracted great interest from laser physicists.As a semiconductor material with excellent nonlinear saturation absorption characteristics,Ga As has been used in solidstate and fiber lasers as a mode-locker.However,the pulse widths that have been reported in the searchable published literature are all long and the shortest is tens of picoseconds.Femtosecond pulse widths,desired for a variety of applications,have not yet been reported in Ga As-based pulsed lasers.In this work,we further explore the nonlinear characteristics of Ga As that has been magnetron sputtered onto the surface of a tapered fiber and its application in the generation of femtosecond lasing via effective dispersion optimization and nonlinearity management.With the enhanced interaction between evanescent waves and Ga As nanosheets,mode-locked soliton pulses as short as 830 fs are generated at repetition rates of 4.64 MHz.As far as we know,this is the first time that femtosecond-level pulses have been generated with a Ga As-based saturable absorber.In addition,soliton molecules,including in the dual-pulse state,are also realized under stronger pumping.This work demonstrates that Ga As-based photonic devices have good application prospects in effective polymorphous ultrashort pulsed laser generation.
文摘GaAs-based nanomaterials are essential for near-infrared nano-photoelectronic devices due to their exceptional optoelectronic properties.However,as the dimensions of GaAs materials decrease,the development of GaAs nanowires(NWs)is hindered by type-Ⅱquantum well structures arising from the mixture of zinc blende(ZB)and wurtzite(WZ)phases and surface defects due to the large surface-to-volume ratio.Achieving GaAs-based NWs with high emission efficiency has become a key research focus.In this study,pre-etched silicon substrates were combined with GaAs/AlGaAs core-shell heterostructure to achieve GaAs-based NWs with good perpendicularity,excellent crystal structures,and high emission efficiency by leveraging the shadowing effect and surface passivation.The primary evidence for this includes the prominent free-exciton emission in the variable-temperature spectra and the low thermal activation energy indicated by the variable-power spectra.The findings of this study suggest that the growth method described herein can be employed to enhance the crystal structure and optical properties of otherⅢ-Ⅴlow-dimensional materials,potentially paving the way for future NW devices.
文摘The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.
