We have demonstrated the growth of quaternary AIlnGaN compounds at different growth temperatures and pressures with metalorganic chemical vapor deposition （MOCVD）. The optical properties of the samples have been inv...We have demonstrated the growth of quaternary AIlnGaN compounds at different growth temperatures and pressures with metalorganic chemical vapor deposition （MOCVD）. The optical properties of the samples have been investigated by photoluminescence （PL） at different temperatures. The results show that the sample grown at higher temperature （850℃） exhibits the best optical quality for its sharp band edge luminescence and weak yellow luminescence. The AIlnGaN exhibited three-dimensional （3D） growth mode at higher pressure. The band edge emission almost disappeared. With the optimization of AIInGaN growth parameters, we replaced the traditional barrier in InGaN/GaN multiple quantum wells （MQWs） with AllnGaN barriers. The peak wavelength for the InGaN/AIInGaN-MQW based light emitting diodes （LEDs） was very stable at various injection current levels because of the polarization-matched InGaN/AIInGaN MQWs.展开更多
The operating parameters such as the internal quantum efficiency (ηi),internal loss (αi) and transparent threshold current density (J0) of double quantum well laser diodes were investigated and identified using the ...The operating parameters such as the internal quantum efficiency (ηi),internal loss (αi) and transparent threshold current density (J0) of double quantum well laser diodes were investigated and identified using the program,Integrated System Engineering-Technical Computer Aided Design (ISE-TCAD). Various thicknesses (6,7,8,10,12 nm) of AlxInyGa1-x-yN barriers with (3 nm) Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current (Ith),and the highest output power (Pop) were 116 mA and 196 mW respectively,at barriers thickness of 6 nm,Al mole fraction of 10% and In mole fraction of 1%,at an emission wavelength of 359.6 nm.展开更多
文摘We have demonstrated the growth of quaternary AIlnGaN compounds at different growth temperatures and pressures with metalorganic chemical vapor deposition （MOCVD）. The optical properties of the samples have been investigated by photoluminescence （PL） at different temperatures. The results show that the sample grown at higher temperature （850℃） exhibits the best optical quality for its sharp band edge luminescence and weak yellow luminescence. The AIlnGaN exhibited three-dimensional （3D） growth mode at higher pressure. The band edge emission almost disappeared. With the optimization of AIInGaN growth parameters, we replaced the traditional barrier in InGaN/GaN multiple quantum wells （MQWs） with AllnGaN barriers. The peak wavelength for the InGaN/AIInGaN-MQW based light emitting diodes （LEDs） was very stable at various injection current levels because of the polarization-matched InGaN/AIInGaN MQWs.
基金conducted under Science Fund,Cycle 2007,of The Ministry of Science,Technology and Innovation,MalaysiaThe financial support from Universiti Sains Malaysia is gratefully acknowledged
文摘The operating parameters such as the internal quantum efficiency (ηi),internal loss (αi) and transparent threshold current density (J0) of double quantum well laser diodes were investigated and identified using the program,Integrated System Engineering-Technical Computer Aided Design (ISE-TCAD). Various thicknesses (6,7,8,10,12 nm) of AlxInyGa1-x-yN barriers with (3 nm) Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current (Ith),and the highest output power (Pop) were 116 mA and 196 mW respectively,at barriers thickness of 6 nm,Al mole fraction of 10% and In mole fraction of 1%,at an emission wavelength of 359.6 nm.
