In the global context of diversification of usable energy sources, the use of renewable energies, in particular solar photovoltaic energy, is becoming increasingly important. As such, the development of a new generati...In the global context of diversification of usable energy sources, the use of renewable energies, in particular solar photovoltaic energy, is becoming increasingly important. As such, the development of a new generation of photovoltaic cells based on the CIGS material is promising. Indeed, the efficiency of these cells has exceeded 20% in recent years. Thus, our work consists in the modeling of a tandem solar cell based on Cu(In,Ga)Se<sub>2</sub> (CGS/CIGS). The goal is to optimize its physical and geometrical parameters in order to obtain a better photovoltaic conversion efficiency compared to other research works on tandem in the past. We used AMPS-1D software for the simulation. When we realize the tandem, the least efficient cell (CGS) imposes the current and the shape of the J-V characteristic of the tandem. We obtained a theoretical efficiency of 39.30% which is significantly higher than the efficiencies obtained in the past by other researchers with a short circuit current of 34.60 mA/cm<sup>2</sup>, an open circuit voltage of 1.74 V and a form factor of 65.20%. The simulation also showed that the high defect density in the material strongly impacts the performance of the tandem.展开更多
In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination...In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction （TRJ） model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si：H/a-SiGe：H/μc-SiGe：H triple cell with an initial efficiency of 12.09% （Voc = 2.03 V, FF = 0.69, Jsc = 8.63 mA/cm^2, area = 1 cm^2） is achieved in our laboratory.展开更多
The numerical simulations were performed using the AMPS-1D simulator to study the effects of the CZTS as an absorber layer and the contacts’barrier height on the performance of four ZnO/CdS/CZTS solar cells.To obtain...The numerical simulations were performed using the AMPS-1D simulator to study the effects of the CZTS as an absorber layer and the contacts’barrier height on the performance of four ZnO/CdS/CZTS solar cells.To obtain the best cell performances,the barrier heights of the back and front contacts were adjusted between 0.01,0.77,0.5,and 1.55 eV,respectively.For simulations,we used the lifetime mode,and the device performances were evaluated under AM1.5 illumination spectra.We found that the efficiency,fill factor,and open-circuit voltage were almost constant at a front contact barrier height of less than 0.31 eV.The short-current density was not affected by the front contact barrier height.The back contact material had a significant impact on the CZTS cells parameters.The best performance was obtained for the CZTS550 cell with JSC=29.53 mA/cm2,VOC=1.07 V,FF=0.88,andη=28.08%at barrier heights of 0.31 and 1.55 eV for front and back contacts,respectively.The conduction band offset at the CZTS550/CdS hetero-junction was found to be spike-like with 0.21 eV.The obtained conversion efficiency is comparable to those previously reported in the literature.展开更多
文摘In the global context of diversification of usable energy sources, the use of renewable energies, in particular solar photovoltaic energy, is becoming increasingly important. As such, the development of a new generation of photovoltaic cells based on the CIGS material is promising. Indeed, the efficiency of these cells has exceeded 20% in recent years. Thus, our work consists in the modeling of a tandem solar cell based on Cu(In,Ga)Se<sub>2</sub> (CGS/CIGS). The goal is to optimize its physical and geometrical parameters in order to obtain a better photovoltaic conversion efficiency compared to other research works on tandem in the past. We used AMPS-1D software for the simulation. When we realize the tandem, the least efficient cell (CGS) imposes the current and the shape of the J-V characteristic of the tandem. We obtained a theoretical efficiency of 39.30% which is significantly higher than the efficiencies obtained in the past by other researchers with a short circuit current of 34.60 mA/cm<sup>2</sup>, an open circuit voltage of 1.74 V and a form factor of 65.20%. The simulation also showed that the high defect density in the material strongly impacts the performance of the tandem.
基金supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707)the Natural Science Foundation of Tianjin City, China (Grant No. 12JCQNJC01000)the Fundamental Research Funds for the Central Universities of China (Grant No. 65012371)
文摘In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction （TRJ） model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si：H/a-SiGe：H/μc-SiGe：H triple cell with an initial efficiency of 12.09% （Voc = 2.03 V, FF = 0.69, Jsc = 8.63 mA/cm^2, area = 1 cm^2） is achieved in our laboratory.
文摘The numerical simulations were performed using the AMPS-1D simulator to study the effects of the CZTS as an absorber layer and the contacts’barrier height on the performance of four ZnO/CdS/CZTS solar cells.To obtain the best cell performances,the barrier heights of the back and front contacts were adjusted between 0.01,0.77,0.5,and 1.55 eV,respectively.For simulations,we used the lifetime mode,and the device performances were evaluated under AM1.5 illumination spectra.We found that the efficiency,fill factor,and open-circuit voltage were almost constant at a front contact barrier height of less than 0.31 eV.The short-current density was not affected by the front contact barrier height.The back contact material had a significant impact on the CZTS cells parameters.The best performance was obtained for the CZTS550 cell with JSC=29.53 mA/cm2,VOC=1.07 V,FF=0.88,andη=28.08%at barrier heights of 0.31 and 1.55 eV for front and back contacts,respectively.The conduction band offset at the CZTS550/CdS hetero-junction was found to be spike-like with 0.21 eV.The obtained conversion efficiency is comparable to those previously reported in the literature.
