Research on the correlation between the dual diffusion behavior of zinc in InGaAs/InP single-photon avalanche photodiodes and device performance

The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.

Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes

The high-temperature performance of 4H-SiC ultraviolet avalanche photodiodes(APDs)in both linear and Geiger modes is extensively investigated.During the temperature-dependent measurements,a fixed bias voltage is adopted for the device samples,which is much more practical and important for high-temperature applications.The results show that the fabricated 4H-SiC APDs are very stable and reliable at high temperatures.As the temperature increases from room temperature to 425 K,the dark current at 95%of the breakdown voltage increases slightly and remains lower than40 pA.In Geiger mode,our 4H-SiC APDs can be self-quenched in a passive-quenching circuit,which is expected for highspeed detection systems.Moreover,an interesting phenomenon is observed for the first time:the single-photon detection efficiency shows a non-monotonic variation as a function of temperature.The physical mechanism of the variation in hightemperature performance is further analyzed.The results in this work can provide a fundamental reference for researchers in the field of 4H-SiC APD ultraviolet detectors.

Planar InAlAs/InGaAs avalanche photodiode with 360 GHz gain×bandwidth product

This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode(APD)by computational simulations and experimental results.The APD adopts the structure of separate absorption,charge,and multiplication(SACM)with top-illuminated.Computational simulations demonstrate how edge breakdown effect is suppressed in the guardringfree structure.The fabricated APD experiment results show that it can obtain a very low dark current while achieving a high gain×bandwidth(GB)product.The dark current is 3 nA at 0.9Vb r,and the unit responsivity is 0.4 A/W.The maximum3 dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for the fabricated APD operating at 1.55μm.

Investigation of Ga_(2)O_(3)/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation

A Ga_(2)O_(3)/diamond separate absorption and multiplication avalanche photodiode(SAM-APD)with mesa structure has been proposed and simulated.The simulation is based on an optimized Ga_(2)O_(3)/diamond heterostructure TCAD physical model,which is revised by repeated comparison with the experimental data from the literature.Since both Ga_(2)O_(3)and diamond are ultra-wide bandgap semiconductor materials,the Ga_(2)O_(3)/diamond SAM-APD shows good solar-blind detection ability,and the corresponding cutoff wavelength is about 263 nm.The doping distribution and the electric field distribution of the SAM-APD are discussed,and the simulation results show that the gain of the designed device can reach 5×10^(4)and the peak responsivity can reach a value as high as 78 A/W.

Recent progress of SiC UV single photon counting avalanche photodiodes

4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs.

Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode

The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation–recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.

Post-processing Free Quantum Random Number Generator Based on Avalanche Photodiode Array

Quantum random number generators adopting single negligible dead time of avalanche photodiodes （APDs） photon detection have been restricted due to the non- We propose a new approach based on an APD array to improve the generation rate of random numbers significantly. This method compares the detectors＇ responses to consecutive optical pulses and generates the random sequence. We implement a demonstration experiment to show its simplicity, compactness and scalability. The generated numbers are proved to be unbiased, post-processing free, ready to use, and their randomness is verified by using the national institute of standard technology statistical test suite. The random bit generation efficiency is as high as 32.8% and the potential generation rate adopting the 32× 32 APD array is up to tens of Gbits/s.

Avalanche photodiodes on silicon photonics

Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or III-V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths.Herein,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.

Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode

We demonstrate two short-wavelength infrared avalanche photodiodes based on InAs/GaSb superlattice grown by metal-organic chemical vapor deposition.The difference between the two devices,namely,p+n-n+and p+nn-n+,is that the p+nn-n+device possesses an additional middle-doped layer to separate the multiplication region from the absorption region.By properly controlling the electric field distribution in the p+nn-n+device,an electric field of 906 kV/cm has been achieved,which is 2.6 times higher than that in the p+n-n+device.At a reverse bias of-0.1 V at 77 K,both devices show a 100%cut-off wavelength of 2.25μm.The p+n-n+and p+nn-n+show a dark current density of 1.5×10^-7 A/cm^2 and 1.8×10^-8 A/cm^2,and a peak responsivity about 0.35 A/W and 0.40 A/W at 1.5μm,respectively.A maximum multiplication gain of 55 is achieved in the p+nn-n+device while the value is only less than 2 in the p+n-n+device.Exponential nature of the gain characteristic as a function of reverse bias confirms a single carrier hole dominated impact ionization.

Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses

Four 4H-SiCp-i-n ultraviolet(UV) avalanche photodiode(APD) samples PIN-0.1, PIN-0.35, PIN-0.5, and PIN-1.0 with different intrinsic layer thicknesses(0.1 μm, 0.35 μm, 0.5 μm, and 1.0 μm, respectively) are designed and fabricated.Single photon detection efficiency(SPDE) performance becomes better as the intrinsic layer thickness increases, which is attributed to the inhibitation of tunneling.Dark count origin is also investigated, an activation energy as small as 0.22 eV of the dark count rate(DCR) confirms that the trap-assisted tunneling(TAT) process is the main source of DCR.The temperature coefficient ranges from-2.6 mV/℃ to 18.3 mV/℃, demonstrating that the TAT process is dominant in APDs with thinner intrinsic layers.Additionally, the room temperature maximum quantum efficiency at 280 nm differs from 48% to 65% for PIN-0.35, PIN-0.5, and PIN-1.0 under 0 V bias, and UV/visible rejection ratios higher than 104 are obtained.

Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes

We design and fabricate 4H-SiC UV avalanche photodiodes （APDs） ~qth positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.

Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure

To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication(SAM)avalanche photodiodes(APDs),we propose the new AlGaN APDs structure combining a large-area mesa with a field plate(FP).The simulated results show that the proposed AlGaN APDs exhibit a significant increase in avalanche gain,about two orders of magnitude,compared to their counterparts without FP structure,which is attributed to the suppression of electric field crowding at sidewall of multiplication layer and the reduction of the maximum electric field at the p-type GaN sidewall in p-n depletion region.Meanwhile,the APDs can produce an obviously enhanced photocurrent due to the increase in cross sectional area of multiplication region.

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorption and Multiplication Regions

It is well known that -nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode (APD) with an Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure as separate absorption and multiplication (SAM) regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure SAM regions used in APDs instead of homogeneous Al0.45Ga0.55N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AlN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode （APD） is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed.

Noise Temperature Characteristics and Gain-control of Avalanche Photodiodes for Laser Radar

Avalanche photodiodes(APDs) are promising light sensors with high quantum efficiency and low noise. It has been extensively used in radiation detection,laser radar and other weak signal detection fields. Unlike other photodiodes,APD is a very sensitive light detector with very high internal gain. The basic theory shows that the gain of APD is related to the temperature. The internal gain fluctuates with the variation of temperature. Investigated was the influence of the variation of the gain induced by the fluctuation of temperature on the output from APD for a very weak laser pulse input in laser radar. An active reverse-biased voltage compensation method is used to stabilize the gain of APD. An APD model is setup to simulate the detection of light pulse signal. The avalanche process,various noises and temperature's effect are all included in the model. Our results show that for the detection of weak light signal such as in laser radar,even a very small fluctuation of temperature could cause a great effect on APD's gain. The results show that the signal-to-noise ratio of the APD's output could be improved effectively with the active gain-control system.

A Double Heterostructure Multiplication Region in AlGaN Based SAGCM Avalanche Photodiode

In this study, separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) with double heterojunction AlN/AlxGa1-xN/GaN in multiplication region were designed to reduce excess noise using Monte Carlo simulation. The multiplication region was broken to three different regions and tried to enhance localization of the first and second impact ionization events at near the heterojunctions. The excess noise of the proposed structure, for high gains, was 64% smaller than that of the fabricated standard AlGaN-APDs.

Inductive Type Impedance of High Sensitivity Silicon Avalanche Photodiodes with Deeply Buried Micropixels

There have been investigated reactive properties of silicon avalanche photodiodes （MAPD---micropixel avalanche photodiode） with deeply buried micropixels （amplification channels） within AC signal frequencies f = 50-500 kHz. By experiment it is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor （negative potential is applying to n-Si substrate） reaches maximum and at certain value Ufor = Uinv changes the sign becoming the negative capacitance （equivalent inductance）. The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value -70 mS at Ufor = 1.0 V （f = 500 kHz）. There has been calculated difference in phase tp appearing between current and voltage and it is shown that at Ufor = 0 V the q = 80 and passes through the zero at Ufor = 0.55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.

Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes

Avalanche photodiodes are widely utilized in research, military and commercial applications which make them attractive for further development. In this paper the results of numerical simulations of uncooled InGaAs/InAlAs/InP based photodiodes are presented. The devices were optimized for 1.55 μm wavelength detection. For device modeling the APSYS Crosslight software was used. Simulated structure consists of separate absorption, charge and multiplication layers with undepleted absorption region and thin charge layer. Based on numerical calculations, the device characteristics like band diagram, dark current, photo current, gain, breakdown voltage and gain bandwidth product were evaluated. The simulation results highlight importance of Zener effect in avalanche photodiode operation.

Highly Sensitive Filter-Less Fluorescence Detection Method Using an Avalanche Photodiode

Herein we report a highly sensitive filter-less fluorescence detection method using an APD （avalanche photodiode）. Experimental measurements using the proposed APD-based highly sensitive fluorescence detection method exhibits the sensing capability to detect an excitation light and a fluorescence light without band pass filter or grating. The principle of this APD-based highly fluorescence detection method is used the varying multiplication ratio that is decided by wavelength. The wavelength controls running distance of photo-excited carrier by absorption coefficients, and this element decide multiplication ratio on fixed high electrical field. In fluorescence detection, they use two types of light： excitation light and fluorescence light. These lights have different wavelengths and make different multiplication ratio as well. Thus this method can separate two types of light easily by using multiplication ratios of APD without band pass filters/gratings. In this experiment, the excitation light is LED （light emitting diode） and fluorescence light occurs from FITC （fluorescein isothiocyanate） with ethanol. The FITC concentration changes from 0.1 μmol/L to 10 mmol/L. In this measurement circuit, we employ APD （S2385）, power supply voltage, and pico ampere current meter. As a result, these lights are correctly separated by using multiplication ratio with calculation at every concentration FITCs.

基于4H-SiC APD单光子探测的主动淬灭电路研究

为了对比不同类型淬灭电路对4H-SiC雪崩光电二极管(APD)探测性能的影响,采用被动淬灭电路(PQC)和主动淬灭电路(AQC),对两种类型SiC紫外APD进行了单光子探测实验,发现在PQC较长死区时间内,会频发后脉冲现象,导致APD的暗计数率(DCR)较高,从而降低器件的信噪比;对APD后脉冲概率的时间分布进行了研究,并进一步对AQC在更高器件过偏压下单光子探测中出现的问题进行了分析,提出了电路改进方案。结果表明,通过将AQC死区时间调整至45 ns,在相同单光子探测效率下,可将器件DCR减少至原先水平的1/4;通过有效抑制后脉冲和加快APD恢复速度,AQC可使器件展现出更加优越的探测性能。此研究为SiC APD在单光子探测中的应用提供了一定的参考。