A one-dimensional fluid/Monte-Carlo（MC）hybrid model is developed to describe capacitively coupled SiH_4/Ar discharge,in which the lower electrode is applied by a RF source and pulse modulated by a square-wave,to inv...A one-dimensional fluid/Monte-Carlo（MC）hybrid model is developed to describe capacitively coupled SiH_4/Ar discharge,in which the lower electrode is applied by a RF source and pulse modulated by a square-wave,to investigate the modulation effects of the pulse duty cycle on the discharge mechanism.An electron Monte Carlo simulation is used to calculate the electron energy distribution as a function of position and time phase.Rate coefficients in chemical reactions can then be obtained and transferred to the fluid model for the calculation of electron temperature and densities of different species,such as electrons,ions,and radicals.The simulation results show that,the electron energy distribution f（ε）is modulated evidently within a pulse cycle,with its tail extending to higher energies during the power-on period,while shrinking back promptly in the afterglow period.Thus,the rate coefficients could be controlled during the discharge,resulting in modulation of the species composition on the substrate compared with continuous excitation.Meanwhile,more negative ions,like Si H_3^-and Si H_2^-,may escape to the electrodes owing to the collapse of ambipolar electric fields,which is beneficial to films deposition.Pulse modulation is thus expected to provide additional methods to customize the plasma densities and components.展开更多
The dry etching characteristic of AlSbTe film was investigated by using a CF/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF/Ar ratio,the Oaddition,the chamber background pres...The dry etching characteristic of AlSbTe film was investigated by using a CF/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of AlSbTe thin films was investigated as a function of the CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CFconcentration of 4%,power of 300 W and pressure of 80 mTorr.展开更多
基金supported by National Natural Science Foundation of China(No.11275038)
文摘A one-dimensional fluid/Monte-Carlo（MC）hybrid model is developed to describe capacitively coupled SiH_4/Ar discharge,in which the lower electrode is applied by a RF source and pulse modulated by a square-wave,to investigate the modulation effects of the pulse duty cycle on the discharge mechanism.An electron Monte Carlo simulation is used to calculate the electron energy distribution as a function of position and time phase.Rate coefficients in chemical reactions can then be obtained and transferred to the fluid model for the calculation of electron temperature and densities of different species,such as electrons,ions,and radicals.The simulation results show that,the electron energy distribution f（ε）is modulated evidently within a pulse cycle,with its tail extending to higher energies during the power-on period,while shrinking back promptly in the afterglow period.Thus,the rate coefficients could be controlled during the discharge,resulting in modulation of the species composition on the substrate compared with continuous excitation.Meanwhile,more negative ions,like Si H_3^-and Si H_2^-,may escape to the electrodes owing to the collapse of ambipolar electric fields,which is beneficial to films deposition.Pulse modulation is thus expected to provide additional methods to customize the plasma densities and components.
基金supported by National Key Basic Research Program of China(Nos.2010CB934300,2011CBA00607,2011CB932800)the National Integrated Circuit Research Program of China(No.2009ZX02023-003)+1 种基金the National Natural Science Foundation of China(Nos.60906004, 60906003,61006087,61076121)the Science and Technology Council of Shanghai,China(No.1052nm07000)
文摘The dry etching characteristic of AlSbTe film was investigated by using a CF/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of AlSbTe thin films was investigated as a function of the CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CFconcentration of 4%,power of 300 W and pressure of 80 mTorr.
