Introduction of Ag nanoparticles by picosecond LIFT to improve the photoelectric property of AZO films

The photoelectric properties of conductive films are improved by doping Ag on aluminum-doped zinc oxide(AZO)films by laser induced forward transfer(LIFT).Firstly,the picosecond laser induced transfer mechanism of Ag films was revealed by numerical simulation;then,different-thickness Ag films were deposited on the AZO films by picosecond LIFT.When the film thickness is 30 nm and,50 nm,we have successfully obtained some Ag-AZO films with better optoelectronic properties by adjusting the laser parameters.

Light-Responsive Polyblend Films with Reconfigurable Surface Micropatterns as Rewritable Information Storage Media

Stimulus-sensitive surfaces with tunable morphologies exhibit a wide range of applications in the fields of surface science and engineering.Herein,a cost-effective yet practical strategy is proposed to fabricate photo-sensitive patterning surface on film/substrate wrinkle system based on an azo-containing polyblend.By manipulating the stress field of the bilayer system globally and/or locally upon the stress relaxation triggered by the reversible cis-trans isomerization of the azobenzene,heating/cooling triggered surface wrinkles on the polyblend films could be tailor-made with visible-light-irradiation.Notably,upon selective photo-irradiation,bespoke surface patterns may be cyclically generated or eliminated,allowing these reconfigurable patterned polyblend surfaces to be used as rewritable information storage media for non-ink printing.The as-prepared photo-printed information patterns with high-resolution are shown to be rewritable for multiple cycles and legible for over 90 d in dark ambient conditions.This study not only provides a versatile strategy for flourishing the stimulus-sensitive systems,but also sheds light on the stress relaxation-triggered morphological evolution of the wrinkling polyblend films.

Semiconductor performance of rare earth gadolinium-doped aluminum–zinc oxide thin film

Rare earth element gadolinium-doped aluminum–zinc oxide(Gd–AZO) semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency(RF) sputtering at room temperature.Electrical properties and microstructure of Gd–AZO thin film were mainly modulated by altering O2 partial pressure(OPP) during the RF sputtering process.Scanning electron microscope(SEM) and X-ray diffraction(XRD) test were carried out to uncover the microstructure variation trend with the sputtering OPP,and amorphous structure which is beneficial to large mass industry manufacture was also demonstrated by the XRD pattern.Transmittance in visible light spectrum implies the potential application for Gd–AZO to be used in transparent material field.Finally,bottom gate,top contact device structure thin film transistors(TFTs) with Gd–AZO thin film as the active channel layer were fabricated to verify the semiconductor availability of Gd–AZO thin film material.Besides,the Gd–AZO TFTs exhibit preferable transfer and output characteristics.