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Characteristics of Callers Accessing the Tobacco Cessation Quitline in China's Mainland 被引量:1
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作者 CHEN Wen Li XIAO Dan +3 位作者 Susan HENDERSON ZHAO Liang JING Hang WANG Chen 《Biomedical and Environmental Sciences》 SCIE CAS CSCD 2013年第8期697-701,共5页
To describe the characteristics of callers accessing the first national smoking quitline in China's Mainland. The national quitline provides residents in China's Mainland with free telephone smoking cessation ... To describe the characteristics of callers accessing the first national smoking quitline in China's Mainland. The national quitline provides residents in China's Mainland with free telephone smoking cessation services. Of 8260 callers from December 1, 2009 to May 31, 2012, the study included 1049 callers to the non-automated service who gave basic information during the call. Of the 1049 live-access callers. 展开更多
关键词 characteristics of Callers accessing the Tobacco Cessation Quitline in Mainland China
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Effects of Film Thickness and Ar/O2 Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories
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作者 郭婷婷 谭婷婷 刘正堂 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第1期125-128,共4页
Cu/HfOx/n^+Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching (RS) characteristics of HfOx films, in terms of swit... Cu/HfOx/n^+Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching (RS) characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects (oxygen vacancies) in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12:3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model. 展开更多
关键词 Effects of Film Thickness and Ar/O2 Ratio on Resistive Switching characteristics of HfOx-Based Resistive-Switching Random access Memories
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