Design of a low noise distributed amplifier with adjustable gain control in 0.15μm GaAs PHEMT

A low noise distributed amplifier consisting of 9 gain cells is presented.The chip is fabricated with 0.15-μm GaAs pseudomorphic high electron mobility transistor（PHEMT） technology from Win Semiconductor of Taiwan.A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB.A novel cascode structure is adopted to extend the output voltage and bandwidth.The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of±1 dB in the 2-20 GHz band.The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz.The amplifier also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point（IIP3）,which demonstrates the excellent performance of linearity.The power consumption is 300 mW with a supply of 5 V,and the chip area is 2.36×1.01 mm^2.

A high linearity multi-band and gain adjustable channel-select filter for TV-tuner application

This paper presents a channel-select filter that employs an active-RC bi-quad structure for TV-tuner application. A design method to optimize the IIP3 of the bi-quad is developed. Multi-band selection and gain adjustment are implemented using switching resistors in the resistor array and capacitors in the capacitor array. Q-factor degradation is compensated by a tuning segmented resistor. A feed-forward OTA with high gain and low third-order distortion is applied in the bi-quad to maximize linearity performance and minimize area by avoiding extra compensation capacitor use. An RC tuning circuit and DC offset cancellation circuit are designed to overcome the process variation and DC offset, respectively. The experimental results yield an in-band IIP3 of more than 31 dBm at 0 dB gain, a 54 dB gain range with 6 dB gain step, and a continuous frequency tuning range from 0.25 to 4 MHz. The in-band ripple is less than 1.4 dB at high gain mode, while the gain error and frequency tuning error are no more than 3.4% and 5%, respectively. The design, which is fabricated in a 0.18 μm CMOS process, consumes 12.6 mW power at a 1.8 V supply and occupies 1.28 mm2.

Accelerated Iterative Learning Control for Linear Discrete Systems with Parametric Perturbation and Measurement Noise

An iterative learning control algorithm based on error backward association and control parameter correction has been proposed for a class of linear discrete time-invariant systems with repeated operation characteristics,parameter disturbance,and measurement noise taking PD type example.Firstly,the concrete form of the accelerated learning law is presented,based on the detailed description of how the control factor is obtained in the algorithm.Secondly,with the help of the vector method,the convergence of the algorithm for the strict mathematical proof,combined with the theory of spectral radius,sufficient conditions for the convergence of the algorithm is presented for parameter determination and no noise,parameter uncertainty but excluding measurement noise,parameters uncertainty and with measurement noise,and the measurement noise of four types of scenarios respectively.Finally,the theoretical results show that the convergence rate mainly depends on the size of the controlled object,the learning parameters of the control law,the correction coefficient,the association factor and the learning interval.Simulation results show that the proposed algorithm has a faster convergence rate than the traditional PD algorithm under the same conditions.

A new compensation method for temperature-dependent gain tilt in L-band EDFA by adjusting only inserted VOA

A novel compensation method for temperature-dependent gain tilt of L-band erbium-doped fiber amplifier (L-EDFA) is proposed, in which the attenuation between stages is the only parameter to be adjusted. A simple linear relationship between the attenuation and the erbium fiber coil temperature was derived theoretically. When the erbium fiber coil temperature cycles from 26 to 70C, the gain tilt variation less than 0.3 dB is achieved experimentally by adjusting only the pre-inserted variable optical attenuator (VOA).

Realization of band-pass and low-pass filters on a single chip in terahertz regime

In this paper, we present the design, simulation, fabrication and characterization of a terahertz(THz) filter based on metamaterial consisting of the periodical double symmetric splits ring resonator(DS-SRR) array. We can observe that the metamaterial-based filter possesses a band-pass transmission when the electrical field is along y direction, and it possesses a low-pass transmission when the electrical field is along x direction. Our results demonstrate that the proposed filter can realize the switching between band-pass effect and low-pass effect by only changing the polarization direction of the incident electromagnetic wave. Moreover, the calculated surface current distributions are also used to analyze the switchable mechanism of the THz metamatrial filter. Therefore, the proposed THz wave filter has a potential application in THz wave communication systems.