The change of the temperature coefficient of resistivity (a) with the particle size, dp, and the grain size, dc, in the nanostructured Ag bulk samples was investigated. dp and dc were controlled by heating the nano-Ag...The change of the temperature coefficient of resistivity (a) with the particle size, dp, and the grain size, dc, in the nanostructured Ag bulk samples was investigated. dp and dc were controlled by heating the nano-Ag powders over the temperature range from 393 to 453 K. The electrical resistance measurements of the nanostructured Ag bulk samples obtained by compacting the Ag powders after heat treatments showed a change in the sign of a with dP and dc. When dp and dc are smaller or equal to 18 and 11 nm below room temperature or 20 and 12 nm above room temperature, respectively, the sign of the temperature coefficient of resistivity changes from positive to negative. The negative a arises mainly from the high resistivity induced by the particle interfaces with very lowly ordered or even disordered structure, a large volume fraction of interfaces and impurities existing in the interfaces, and the quantum size effect appearing in the nano-Ag grains.展开更多
基金the National Natural Science FOundation of China under grant! No.19974041the National Major Fundamental ResearCh Program-Nal
文摘The change of the temperature coefficient of resistivity (a) with the particle size, dp, and the grain size, dc, in the nanostructured Ag bulk samples was investigated. dp and dc were controlled by heating the nano-Ag powders over the temperature range from 393 to 453 K. The electrical resistance measurements of the nanostructured Ag bulk samples obtained by compacting the Ag powders after heat treatments showed a change in the sign of a with dP and dc. When dp and dc are smaller or equal to 18 and 11 nm below room temperature or 20 and 12 nm above room temperature, respectively, the sign of the temperature coefficient of resistivity changes from positive to negative. The negative a arises mainly from the high resistivity induced by the particle interfaces with very lowly ordered or even disordered structure, a large volume fraction of interfaces and impurities existing in the interfaces, and the quantum size effect appearing in the nano-Ag grains.
