Synthesis and electrochemical properties of Al-doped LiVPO_4F cathode materials for lithium-ion batteries

Al-doped LiVPO4F cathode materials LiAlxV1-xPO4F were prepared by two-step reactions based on a car-bothermal reduction （CTR） process. The properties of the Al-doped LiVPO4F were investigated by X-ray diffraction （XRD）,scanning electron microscopy （SEM）,and electrochemical measurements. XRD studies show that the Al-doped LiVPO4F has the same triclinic structure （space group p-↑1 ） as the undoped LiVPO4F. The SEM images exhibit that the particle size of Al-doped LiVPO4F is smaller than that of the undoped LiVPO4F and that the smallest particle size is only about 1 μm. The Al-doped LiVPO4F was evaluated as a cathode material for secondary lithium batteries,and exhibited an improved reversibility and cycleability,which may be attributed to the addition of Al^3＋ ion by stabilizing the triclinic structure.

Effect of Ethanol on Synthesis and Electrochemical Property of Mesoporous Al-doped Titanium Dioxide via Solid-state Reaction

Mesoporous aluminum-doped titanium dioxide(Al-TiO2) materials with high specific surface areas were prepared via a solid-state reaction route.The properties of these materials were characterized by X-ray diffraction(XRD),high resolution transmission electron microscopy(HRTEM),energy dispersive spectroscopy(EDS),N2 absorption-desorption,ultraviolet visible light spectroscopy(UV-Vis) and electrochemical spectroscopy.The results show that the mesoporous structure of the product with ethanol is composed of anatase laced crystal walls with amorphous grain boundaries formed gradually by degradation.Compared with those without ethanol,these samples possess larger crystallite size since ethanol decreases the pore size at higher temperature.With the increase of ethanol amount,however,the crystallite size will grow.The amorphous grain boundaries in the mesoporous material,with a large impedance and low incidental cyclic potential,are difficult to effectively degrade and the phase transformation temperature is changed from 500 to 550℃.The growth rate of Al-TiO2 crystallites that obeys the quadratic polynomial equation may be controlled.

Enhanced Work Function of Al-Doped Zinc-Oxide Thin Films by Oxygen Inductively Coupled Plasma Treatment

Al-doped zinc-oxide （AZO） thin films treated by oxygen and chlorine inductively coupled plasma （ICP） were compared. Kelvin probe （KP） and X-ray photoelectron spectroscopy （XPS） were employed to characterize the effect of treatment. The results of KP measurement show that the surface work function of AZO thin films can increase up to 5.92 eV after oxygen ICP （O-ICP）＇s treatment, which means that the work function was increased by at least 1.1 eV. However, after the treatment of chlorine ICP （CI-ICP）, the work function increased to 5.44 eV, and the increment was 0.6 eV. And 10 days later, the work function increment was still 0.4 eV after O-ICP＇s treatment, while the work function after Cl-ICP＇s treatment came back to the original value only after 48 hours. The XPS results suggested that the O-ICP treatment was more effective than CI-ICP for enhancing the work function of AZO films, which is well consistent with KP results.

Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition

In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.

First-principle investigation on electronic structures and elastic properties of Al-doped MoSi_2

The electronic structures and elastic properties of Al-doped MoSi2 were calculated using the plane wave pseudo-potential method based on the density functional theory,in which the generalized-gradient approximation(GGA) was used to describe the exchange-correlation potential.Starting from the elastic constants,bulk modulus,shear modulus,elastic modulus and Poisson ratio of Al-doped MoSi2 were obtained by using the Hill method.The results indicate that conductivity of Al-doped MoSi2 is improved to some extent in comparison with that of pure MoSi2 due to the orbit hybridization of Mo 4d,Al 3p and Si 3p electrons.In addition,calculations show that the elastic modulus and the brittleness of Al-doped MoSi2 are smaller than those of pure MoSi2,which implies that it is feasible to toughen MoSi2 by doping Al.The agreement of the conclusion with experiment shows that the present theory is reasonable.

Surface properties of Al-doped ZnO thin film before and after CF_4/Ar plasma etching

Al-doped ZnO(AZO) is considered as an alternative to transparent conductive oxide materials.Patterning and achieving a stable surface are important challenges in the development and optimization of dry etching processes, which must be overcome for the application of AZO in various devices. Therefore, in this study, the etch rate and surface properties of an AZO thin film after plasma etching using the adaptive coupled plasma system were investigated. The fastest etch rate was achieved with a CF_(4)/Ar ratio of 50:50 sccm. Regardless of the ratio of CF_(4) to Ar,the transmittance of the film in the visible region exceeded 80%. X-ray photoelectron spectroscopy analysis of the AZO thin film confirmed that metal-F bonding persists on the surface after plasma etching. It was also shown that F eliminates O vacancies. Consequently, the work function and bandgap energy increased as the ratio of CF-4 increased. This study not only provides information on the effect of plasma on AZO thin film, but identifies the cause of changes in the device characteristics during device fabrication.

AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

AlGaN/GaN high-electron-mobility transistors （HEMTs） with Al-doped ZnO （AZO） transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current-gain cutoff frequency （fT） of 10 GHz and a power gain cutoff frequency （fmax） of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C-V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C-V dual sweep.

A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel

We report a back-gated metal-oxide-ferroelectric-metal （MOFM） field-effect transistor （FET） with lead zirconate titanate （PZT） material, in which an Al doped zinc oxide （AZO） channel layer with an optimized doping concentration of 1% is applied to reduce the channel resistance of the channel layer, thus guaranteeing a large enough load capacity of the transistor. The hysteresis loops of the Pt/PZT/AZO/Ti/Pt capacitor are measured and compared with a Pt/PZT/Pt capacitor, indicating that the remnant polarization is almost 40 μC/cm^2 and the polarization is saturated at 20 V. The measured capacitance-voltage properties are analyzed as a result of the electron depletion and accumulation switching operation conducted by the modulation of PZT on AZO channel resistance caused by the switchable remnant polarization of PZT. The switching properties of the AZO channel layer are also proved by the current-voltage transfer curves measured in the back-gated MOFM ferroelectric FET, which also show a drain current switching ratio up to about 100 times.

Magnetic Properties of Al-Doped Na_(0.7)Co_(1-x)Al_xO_2

Single phase polycrystalline samples Na0.7Co1-xAlxO2 （x = 0, 0.05, 0.10, 0.15, 0.20, 0.25, 030） were prepared by solid state reaction. The magnetic properties from 5 K to 300 K have been studied by dc and ac magnetic susceptibility measurements. Samples with lower doping quantity （x = 0, 0.05, 0.10） showed paramagnetic behaviors, but those with higher doping quantity （x=0.20, 0.25, 0.30）showed spin-glass behaviors with a freezing temperature （Tf） of about 13 K.

锂离子二次电池正极材料LiAl_yCo_(0.2)Ni_(0.8-y)O_2的合成及其电化学性能研究

用固相反应法合成了锂离子二次电池正极材料LiAlyCo0.2Ni0.8-yO2(y=0,0.001,0.005,0.01,0.03),采用XRD、SEM、ICP-AES、差分计时电位法和充放电循环等对合成的材料的物理化学性质以及电化学性能进行了测试分析。结果表明所合成的产物均为α-NaFeO2型的层状结构,产物无杂质相,产物的表面形貌规则,颗粒大小均匀。实验结果证明经过Al掺杂后的材料的放电电压平台有所提高,容量也有所上升。并且随着Al含量的增加,材料在电化学充放电过程的结构稳定性在上升,因此电化学稳定性得到了提高。实验结果还表明低含量Al元素的掺杂既提高了LiNi0.8Co0.2O2的放电容量,又提高了其循环可逆性,使材料的容量保持率显著提高。

溶剂热法制备铝掺杂纳米ZnO及其气敏性能

采用溶剂热法合成了铝掺杂的纳米ZnO气敏材料,运用XRD和BET等手段对产物进行了表征并进行了相应的气敏性能测试。结果表明,掺杂1.5%Al后的ZnO比表面最大,粒径最小;材料对乙醛、90#汽油、90#乙醇汽油、硫化氢、二氧化氮响应较高。掺杂量为1.5%Al的元件对90#汽油在浓度为50ppm时灵敏度接近120。

Al^(3+)离子掺杂对负载TiO_2薄膜光催化活性的影响

以钛酸丁酯和Al2(SO4)3·18H2O为原料,采用溶胶凝胶法在钛片、玻璃、釉面瓷砖、陶瓷、不锈钢和铝片六种载体上制备了Al3+掺杂TiO2薄膜,讨论了不同Al3+掺杂浓度下,不同载体表面上制备的TiO2薄膜对甲基橙脱色率的影响。试验结果表明Al3+对TiO2薄膜的掺杂效果与载体的类型密切相关,并且不同载体其Al3+掺杂的最佳浓度也不同。Al3+掺杂后,TiO2薄膜光催化活性提高最大的是玻璃,其次是釉面瓷砖、铝片、钛片、陶瓷,最差的是负载不锈钢。

ZnO膜制备及性能研究

首次用超声喷雾法制备ZnO膜,研究了溶液组成等对成膜速度的影响,探讨了Al离子掺杂等因素对膜电性能的影响关系。

掺杂浓度对Al-F共掺杂ZnO透明导电薄膜性能的影响

通过溶胶-凝胶法制备了不同Al-F掺杂浓度的ZnO薄膜,研究了薄膜的晶体结构、表面形貌、电阻率和透光性随着掺杂浓度的变化情况。结果表明:制备的ZnO∶F∶Al薄膜具有高度的C轴择优取向性,薄膜表面平整、晶粒均匀致密。当Al3+和F-的掺杂浓度皆为0.75at%时,薄膜的平均晶粒尺寸最大为43.8nm;导电性能最好,电阻率可低至1.02×10-2Ω.cm;在可见光范围内薄膜的平均透过率超过90%,吸收边出现明显的蓝移现象。

锂离子蓄电池正极材料LiMn_(2-x-y-z)Tl_xAl_yM_zO_4(M=Co、Cr、Ni)的合成及电化学性能研究

采用同时掺杂Tl、Al和M(M=Co、Cr和Ni)三种金属原子和改进固相反应的方法合成了复合尖晶石正极材料LiMn2-x-y-zTlxAlyMzO4,并采用XRD、SEM、TEM、循环伏安和电化学测试考察了它的物理性质和电化学性能。结果表明,所合成的正极材料具有与母体LiMn2O4尖晶石同样完整的尖晶石结构,规则的形貌和均匀的粒径分布。当M为Co和Cr时,目标材料的平均粒径约800nm,且具有良好的电化学性能,其首次充电容量分别为123.70mAh·g-1和121.30mAh·g-1,首次放电容量分别为117.30mAh·g-1和115.70mAh·g-1。当M为Ni时,材料的电化学性能相对较差。循环伏安和充放电曲线表明该正极材料的充放电分别为两步脱锂和插锂机理。当Li掺杂量较小时,目标材料在充放电过程中均各有两个平台。随着Li掺杂量的增加,充放电平台有由两个逐渐转变为一个的趋势。当M为Co或Cr时,该正极材料不仅拥有较高的比容量和常温循环稳定性能,而且还具有较优良的高温循环稳定性能,这可能主要归因于三种金属的协同作用使目标材料的结构更加稳定,这也使该材料有可能成为电动车电池的较佳正极材料。

SiO_2表面覆盖剂对铝合金熔体直接氧化生长的影响

以Lanxide材料的成形工艺控制为目标 ,研究了SiO2 表面覆盖剂在铝合金熔体直接氧化生长过程中的作用。结果表明有效促进Al2 O3/Al复合材料生长的SiO2 加入量为 1～ 6 g/dm2 。SiO2 能够显著促使材料近平面生长 ,形成细化胞状晶团和提高组织均匀度 ;在覆盖SiO2 的条件下 ,温度升高 ,生长速度加快的同时 ,材料宏观生长表面趋于平整 。

掺杂量对ZnO:Al膜电学性能的影响

使用电子束蒸发法沉积了铝掺杂的氧化锌透明导电膜．通过霍尔系数测量及ＸＲＤ、ＳＥＭ测试分析，研究了掺铝量对膜的电学性能的影响，结果表明；掺杂量影响膜的载流子浓度、迁移率及结晶状况，当Ａｌ_２Ｏ_３与 ＺｎＯ重量比为 １．５％时，沉积的膜具有较低的电阻率．

铝合金表面覆盖SiO_2直接氧化生长的反应机理

通过热力学计算和XRD分析,确定了Al-Mg-Si合金熔体与SiO_2表面覆盖剂反应的生成物相为Al_2O_3、Al、Si和MgAl_2O_4。直接金属氧化动力学实验表明,SiO_2 与熔体的接触反应加快了初期的传质过程,使微观传输通道始终处于活性状态,生成的 Al_2O_3 构筑了材料的初始骨架,Al_2O_3/Al 复合材料氧化生长的孕育期消失。

热镀铝锌层镧掺杂硅烷钝化膜的腐蚀性能

采用掺杂硝酸镧的硅烷(BTESPT)钝化液处理热镀铝锌层:室温(25℃)浸渍,120℃固化30min,在铝锌层上形成镧盐掺杂硅烷钝化膜.研究了热镀铝锌基体钝化后的结构、表面形貌与腐蚀性能.傅立叶变换红外光谱(FTIR)表明,掺杂硝酸镧的硅烷溶液与铝锌基体表面发生了化学键合作用,形成SiOAl与SiOZn网络结构的钝化膜,钝化膜中主要的有机基团种类与无掺杂剂硅烷膜无显著差别.SEM/EDS研究结果表明:掺杂硝酸镧的硅烷膜均匀、致密、无明显微裂纹,硅烷膜中主要含有C,O,Si,S,Al,Zn,La等元素.耐蚀性研究表明,掺杂硝酸镧的硅烷钝化能明显降低腐蚀电位和腐蚀电流密度,增大极化电阻,使其耐蚀性远远高于无掺杂剂的硅烷钝化.

铝掺杂对氧化锌压敏陶瓷电性能的影响

研究了微量铝(Al)掺杂对氧化锌(ZnO)压敏陶瓷显微结构、电性能和本征点缺陷浓度等方面的影响及其作用机理。研究结果表明,介电损耗峰值能够在一定程度上反映ZnO压敏陶瓷本征点缺陷浓度,微量Al掺杂能够引起ZnO压敏陶瓷本征点缺陷浓度的显著降低。氧空位缺陷对应的损耗峰峰值从88.82下降到1.74,锌填隙缺陷对应的损耗峰峰值从133.38下降到8.14。随着Al掺杂量的增加,ZnO压敏陶瓷平均晶粒尺寸从9.15μm逐渐下降到6.24μm,而压敏电压从235 V/mm逐渐提高到292 V/mm。可见Al掺杂抑制了ZnO压敏陶瓷中本征点缺陷的形成,而本征缺陷浓度的降低导致材料显微结构和电性能发生明显变化。本文阐述了Al掺杂对ZnO压敏陶瓷本征缺陷的影响机理,建立了ZnO压敏陶瓷显微形貌、电性能、介电性能和本征点缺陷之间的联系。