Through optimizing the tensile-strained single quantum well (SQW) epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GaInP/AlGaInP SQW se...Through optimizing the tensile-strained single quantum well (SQW) epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GaInP/AlGaInP SQW separate confinement laser emitting structures are grown by low-pressure metal organic chemical vapor deposition and lcm-wide laser bars with 50% fill factor are fabricated. The cross sections of the channels are analyzed using scanning electron microscope. Mounted on passively cooled copper heat sinks, the laser bars achieve an output power of 259W in quasi-continuouswave (200μs pulse width and 2% duty cycles) operation at a driving current of 300A,which is the upper limit of power supply in our measurement setup,and no catastrophically optical mirror damage is observed. A peak power conversion efficiency of 52% is obtained at 104A with 100W output power.At a high-power operation of 100W,the spectrum of the bar has a centric wavelength of 807.8nm and full width at half maximum of 2.4nm. The full angles at half maximum power for fast axis and slow axis are 29.3°and 7.5° ,respectively.展开更多
c-plane GaN-based blue laser diodes(LDs) were fabricated with Al-free cladding layers(CLs) and deepened etching depth of mesa structure, so the aspect ratio of the far-field pattern(FFP) of the laser beam can be...c-plane GaN-based blue laser diodes(LDs) were fabricated with Al-free cladding layers(CLs) and deepened etching depth of mesa structure, so the aspect ratio of the far-field pattern(FFP) of the laser beam can be reduced to as low as 1.7, which is nearly the same as conventional AlGa In P-based red LDs. By using GaN CLs,the radiation angle of the laser beam θ⊥ is only 10.1° in the direction perpendicular to the junction plane. After forming a deeply etched mesa, the beam divergence angle parallel to the junction plane of FFP, θ;, increases from4.9° to 5.8°. After using the modified structure, the operation voltage of LD is effectively reduced by 2 V at an injection current of 50 mA, but the threshold current value increases. The etching damage may be one of the main reasons responsible for the increase of the threshold current.展开更多
By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at ...By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.展开更多
介绍了无铝激光器的优点 ,利用 L P- MOVPE生长出宽波导有源区无铝 SCH- SQW结构激光器 .该结构采用宽带隙 In Ga Al P作限制层 ,加宽的 In Ga P作波导层 ,增加对载流子和光子的限制作用 ,以克服有铝激光器易氧化和全无铝激光器载流子...介绍了无铝激光器的优点 ,利用 L P- MOVPE生长出宽波导有源区无铝 SCH- SQW结构激光器 .该结构采用宽带隙 In Ga Al P作限制层 ,加宽的 In Ga P作波导层 ,增加对载流子和光子的限制作用 ,以克服有铝激光器易氧化和全无铝激光器载流子易泄漏的缺点 .制作的条宽 10 0 μm、腔长 1mm的激光器 (腔面未镀膜 ) ,激射波长为831nm,室温连续输出光功率达 1W.展开更多
通过FTIR、Raman、27 Al NMR、XRD、DSC等测试方法,研究了ZnO含量对Bi2O3-B2O3-ZnO-SiO2-Al2O3系统低熔点玻璃结构及热性能的影响。结果表明:当ZnO含量小于12wt%时,Zn^2+与自由氧结合形成[ZnO 4]四面体,增强网络结构,玻璃化转变温度增大...通过FTIR、Raman、27 Al NMR、XRD、DSC等测试方法,研究了ZnO含量对Bi2O3-B2O3-ZnO-SiO2-Al2O3系统低熔点玻璃结构及热性能的影响。结果表明:当ZnO含量小于12wt%时,Zn^2+与自由氧结合形成[ZnO 4]四面体,增强网络结构,玻璃化转变温度增大,热膨胀系数减小;当ZnO含量大于12wt%时,锌氧多面体由四配位[ZnO4]转变为六配位[ZnO6],破坏网络结构,玻璃化转变温度减小,热膨胀系数增大;ZnO含量的提高和热处理温度的升高对玻璃析晶能力没有明显的促进作用。展开更多
文摘Through optimizing the tensile-strained single quantum well (SQW) epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GaInP/AlGaInP SQW separate confinement laser emitting structures are grown by low-pressure metal organic chemical vapor deposition and lcm-wide laser bars with 50% fill factor are fabricated. The cross sections of the channels are analyzed using scanning electron microscope. Mounted on passively cooled copper heat sinks, the laser bars achieve an output power of 259W in quasi-continuouswave (200μs pulse width and 2% duty cycles) operation at a driving current of 300A,which is the upper limit of power supply in our measurement setup,and no catastrophically optical mirror damage is observed. A peak power conversion efficiency of 52% is obtained at 104A with 100W output power.At a high-power operation of 100W,the spectrum of the bar has a centric wavelength of 807.8nm and full width at half maximum of 2.4nm. The full angles at half maximum power for fast axis and slow axis are 29.3°and 7.5° ,respectively.
基金supported by the National Key R&D Program(Nos.2017YFB0403100,2017YFB0403101)the National Natural Science Foundation of China(Nos.61534007,61404156,61522407,61604168,61775230)+7 种基金the Key Frontier Scientific Research Program of the Chinese Academy of Sciences(No.QYZDB-SSW-JSC014)the Science and Technology Service Network Initiative of the Chinese Academy of Sciences,the Key R&D Program of Jiangsu Province(No.BE2017079)the Natural Science Foundation of Jiangsu Province(No.BK20160401)the China Postdoctoral Science Foundation(No.2016M591944)supported by the Open Fund of the State Key Laboratory of Luminescence and Applications(No.SKLA-2016-01)the Open Fund of the State Key Laboratory on Integrated Optoelectronics(Nos.IOSKL2016KF04,IOSKL2016KF07)the Seed Fund from SINANO,CAS(No.Y5AAQ51001)supported technically by Nano Fabrication Facility,Platform for Characterization&Test,Nano-X of SINANO,CAS
文摘c-plane GaN-based blue laser diodes(LDs) were fabricated with Al-free cladding layers(CLs) and deepened etching depth of mesa structure, so the aspect ratio of the far-field pattern(FFP) of the laser beam can be reduced to as low as 1.7, which is nearly the same as conventional AlGa In P-based red LDs. By using GaN CLs,the radiation angle of the laser beam θ⊥ is only 10.1° in the direction perpendicular to the junction plane. After forming a deeply etched mesa, the beam divergence angle parallel to the junction plane of FFP, θ;, increases from4.9° to 5.8°. After using the modified structure, the operation voltage of LD is effectively reduced by 2 V at an injection current of 50 mA, but the threshold current value increases. The etching damage may be one of the main reasons responsible for the increase of the threshold current.
文摘By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.
文摘介绍了无铝激光器的优点 ,利用 L P- MOVPE生长出宽波导有源区无铝 SCH- SQW结构激光器 .该结构采用宽带隙 In Ga Al P作限制层 ,加宽的 In Ga P作波导层 ,增加对载流子和光子的限制作用 ,以克服有铝激光器易氧化和全无铝激光器载流子易泄漏的缺点 .制作的条宽 10 0 μm、腔长 1mm的激光器 (腔面未镀膜 ) ,激射波长为831nm,室温连续输出光功率达 1W.
文摘通过FTIR、Raman、27 Al NMR、XRD、DSC等测试方法,研究了ZnO含量对Bi2O3-B2O3-ZnO-SiO2-Al2O3系统低熔点玻璃结构及热性能的影响。结果表明:当ZnO含量小于12wt%时,Zn^2+与自由氧结合形成[ZnO 4]四面体,增强网络结构,玻璃化转变温度增大,热膨胀系数减小;当ZnO含量大于12wt%时,锌氧多面体由四配位[ZnO4]转变为六配位[ZnO6],破坏网络结构,玻璃化转变温度减小,热膨胀系数增大;ZnO含量的提高和热处理温度的升高对玻璃析晶能力没有明显的促进作用。