An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents ...An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.展开更多
The semiclassical transport equations are used to study the high frequency performance of AlGaAs / GaAs HBTs. Electron velocity overshoot effect and its influence on the cut off frequency characteristics of AlGaAs / G...The semiclassical transport equations are used to study the high frequency performance of AlGaAs / GaAs HBTs. Electron velocity overshoot effect and its influence on the cut off frequency characteristics of AlGaAs / GaAs HBTs with different collector design parameters are analyzed and discussed.展开更多
文摘An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.
文摘The semiclassical transport equations are used to study the high frequency performance of AlGaAs / GaAs HBTs. Electron velocity overshoot effect and its influence on the cut off frequency characteristics of AlGaAs / GaAs HBTs with different collector design parameters are analyzed and discussed.
