AlSb polycrystalline thin films were prepared by magnetron sputtering with an improved geometric target, and their structural,electrical and optical properties were studied. The results of XRD measurements suggest tha...AlSb polycrystalline thin films were prepared by magnetron sputtering with an improved geometric target, and their structural,electrical and optical properties were studied. The results of XRD measurements suggest that the annealed AlSb thin films are Zinc-blende structure with the average size of about 23～31 nm, and the higher temperature promotes the crystallization of the films. The morphology obtained from the AFM measurements reveals that the surfaces of the films are smooth and the particles are uniform with the average size of about 50 nm. Hall Effect measurements show that AlSb films are p-type semiconductors and the test of temperature dependence of dark conductivity in vacuum indicates the conductivity activation energys are 0.05 eV at low temperature and 0.13 eV at a higher temperature. The optical bandgap for a typical AlSb film is 1.52eV, which is indicated from the optical absorption measurements.展开更多
Cu-doped AlSb polycrystalline films were grown on quartz glass by magnetron co-sputtering.The structural,morphological and electrical properties of the films were studied.The incorporation of copper atoms can result i...Cu-doped AlSb polycrystalline films were grown on quartz glass by magnetron co-sputtering.The structural,morphological and electrical properties of the films were studied.The incorporation of copper atoms can result in the increase of lattice constants,and annealing is helpful to eliminate this deformation.Cu-doped AlSb films exhibit weak n-type conductivity.The results show that the doping effect has a close relationship with the annealing process,meaning that the position of Cu atom in AlSb polycrystalline films might influence the doping effect.展开更多
基金National High Technology Research and Development Program("863"program) of China under Grant(2006AA05Z418)
文摘AlSb polycrystalline thin films were prepared by magnetron sputtering with an improved geometric target, and their structural,electrical and optical properties were studied. The results of XRD measurements suggest that the annealed AlSb thin films are Zinc-blende structure with the average size of about 23～31 nm, and the higher temperature promotes the crystallization of the films. The morphology obtained from the AFM measurements reveals that the surfaces of the films are smooth and the particles are uniform with the average size of about 50 nm. Hall Effect measurements show that AlSb films are p-type semiconductors and the test of temperature dependence of dark conductivity in vacuum indicates the conductivity activation energys are 0.05 eV at low temperature and 0.13 eV at a higher temperature. The optical bandgap for a typical AlSb film is 1.52eV, which is indicated from the optical absorption measurements.
基金Project supported by the National Basic Research Program of China (No.2011CBA00708)
文摘Cu-doped AlSb polycrystalline films were grown on quartz glass by magnetron co-sputtering.The structural,morphological and electrical properties of the films were studied.The incorporation of copper atoms can result in the increase of lattice constants,and annealing is helpful to eliminate this deformation.Cu-doped AlSb films exhibit weak n-type conductivity.The results show that the doping effect has a close relationship with the annealing process,meaning that the position of Cu atom in AlSb polycrystalline films might influence the doping effect.
