Corrosion and Electrochemical Behavior of Zn-Cu-Ti Alloy Added with La in 3% NaOH Solution

The corrosion mechanism of Zn-Cu-Tialloy added with La in 3% NaOH solution was investigated by electrochemicaltesting and SEM observation.Polarization curves manifested that the overallcorrosion kinetics of alloys are under anodic control.The anodic passivation of the Zn-Cu-Tialloy is remarkably improved by the addition of La.Because La can effectively improve the hydrogen evolution/oxygen reduction over-potentialof alloy elements,and the rare earth oxide film plays an important role in insulation that can strengthen the dielectric properties of Zn-Cu-Tialloy,the corrosion resistance of Zn-Cu-Tialloy is made significantly better by adding a trace amount of La.The improvement of corrosion resistance is not positively correlated with the adding amount of La to alloy.The Zn-Cu-Ti-0.5La alloy displays the best corrosion resistance behavior.The corrosion form of the alloys mainly belongs to a selective corrosion and the main solid corrosion products are Zn（OH）_2 and ZnO.

High Selective Etching of Aluminum Alloys In High Plasma Density Reactor

An inductively coupled plasma (ICP) discharge and its etching behaviors for aluminum alloys were investigated in this report. A radio frequency power supply was used for plasma generation. The unique hardware configuration enabled one to control ion energy separately from plasma density. Plasma properties were measured with a Langmuir probe. Electron temperature, plasma potential and plasma density were found to be comparable with those reported from Electron Cyclotron Resonance (ECR) and other types of reactors[1].A mixture of HBr and chlorine gases were used for this aluminum etch study. Experimental matrices were designed with Response Surface Methodology (RSM) to analyze the process trends versus etch parameters, such as source power, bias power and gas composition. An etch rate of 8500A to 9000A per minute was obtained at 5 to 15 mTorr pressure ranges. Anisotropic profiles with high photoresist selectivity (5 to 1) and silicon dioxide selectivity greater than 10 were achieved with HBr addition into chlorine plasma.Bromine-containing chemistry for an aluminum etch in a low pressure ICP discharge showed great potential for use in ULSI fabrication. In addition, the hardware used was very simple and the chamber size was much smaller than other high density plasma sources.

Phase and Microstructure Selection During Directional Solidification of Peritectic Alloy Under Convection Condition

A phase and microstructure selection map used for peritectic alloy directionally solidified under convection condition was presented,which is based on the nucleation,constitutional undercooling criterion（NCU criterion）,and the highest interface temperature criterion.This selection map shows the relationships between the phase/microstructure,the G/V ratio（G is the temperature gradient,V is the growth velocity）,and the alloy composition under different convection intensities and nucleation undercoolings.Comparing with the results from directional solidification experiments of Sn–Cd peritectic alloys,this selection map was generally in agreement with the experimental results.

Direct manufacturing of Cu-based alloy parts by selective laser melting

The frequent defects of the metal parts, such as non-fully melting, thermal strain, and balling, which are produced by selective laser melting （SLM） that is a novel method of one-step manufacturing, are analyzed theoretically and experimentally. The processing parameters significantly affect the quality of the final parts, and simultaneously, the appropriate laser mode and the special scanning strategy assure a satisfying quality of the final parts. The SLM experiment is carried out using Cu-based powder. The metal part is divided into several scanned regions, each of which is scanned twice at the cross direction with different scanning speeds. The microstructure is analyzed on microscope. The results show that the part is metallurgically bonded entity with a relative density of 95%, and the microstructure is composed of equiaxial crystal and dendritic crystal whose distributions are mainly decided by the scanning strategy.

Serrated chip characteristics and formation mechanism in high-speed machining of selective laser melted Ti6Al4V alloys

Serrated chips,consisting of extremely uneven plastic deformation,are a prominent feature of high-speed machining of difficultto-machine materials.This paper focuses on the evolution of chip form,chip morphology features(chip free surface,tool-chip contact surface,and chip edge),and chip segment parameters in subsequent high-speed(vc=50 and 150 m min-1)machining of selective laser melted(SLMed)Ti6Al4V alloys,which are significantly different from conventional Ti6Al4V alloy in microstructure,mechanical properties and machinability.The effect of laser beam scanning schemes(0°,67.5°,and 90°),machined surfaces(top and front),and cutting speeds on serrated chip characteristics of SLMed Ti6Al4Valloys was investigated.Based on the Johnson-Cook constitutive model of SLMed Ti6Al4Valloys,an orthogonal cutting model was developed to better understand the effect of physical-mechanical properties on the shear localization,which dominates the formation mechanism of serrated chips in post-machining of SLMed Ti6Al4V alloy.The results showed that the critical cutting speed(CCS)for chip serration of SLMed Ti6Al4V alloy is lower than that for serrated chips of conventional Ti6Al4V alloy,and the serrated profile of SLMed Ti6Al4V chips was more regular and pronounced.Besides,due to anisotropic microstructure and mechanical properties of SLMed Ti6Al4Valloys,the serration degree of chips produced on the top surfaces of SLMed Ti6Al4Valloys is more prominent than that of chips generated on the front surfaces.In addition,because of the poor deformation coordination and high plastic flow stresses of needle-like martensiteα′,the plastic flow and grain distortion in the adiabatic shear band(ASB)of SLMed Ti6Al4V chips are significantly smaller than those in the ASB of conventional Ti6Al4V with equiaxed grains.