Impact of annealing temperature on the ferroelectric properties of W/Hf_(0.5)Zr_(0.5)O_(2)/W capacitor

Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with temperature varied from 350℃to 550℃,on the electricity,ferroelectricity and reliability of a Hf_(0.5)Zr_(0.5)O_(2)(HZO;7.5 nm)film capacitor.It was found that HZO film annealed at a low temperature of 400℃can effectively suppress the formation of the monoclinic phase and reduce the leakage current.HZO film annealed at 400℃also exhibits better ferroelectric properties than those annealed at 350℃and 550℃.Specifically,the 400℃-annealed HZO film shows an outstanding 2Pr value of 54.6μC·cm^(-2)at±3.0 MV·cm^(-1),which is relatively high compared with previously reported values for HZO film under the same electric field and annealing temperature.When the applied electric field increases to±5.0 MV·cm^(-1),the 2Pr value can reach a maximum of 69.6μC·cm^(-2).In addition,the HZO films annealed at 400℃and 550℃can endure up to bout 2.3×10^(8)cycles under a cycling field of 2.0 MV·cm^(-1)before the occurrence of breakdown.In the 400℃-annealed HZO film,72.1%of the initial polarization is maintained while only 44.9%is maintained in the 550℃-annealed HZO film.Our work demonstrates that HZO film with a low crystallization temperature(400℃)has quite a high ferroelectric polarization,which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.

Effects of annealing temperature on the microstructure and properties of the 25Mn-3Si-3Al TWIP steel

Microstructures and mechanical properties of the 25Mn twinning induced plasticity （TWIP） steel at different annealing temperatures were investigated. The results indicated that when the annealing temperature was 1000℃, the 25Mn steel showed excellent comprehensive mechanical properties, the tensile strength was about 640 MPa, the yield strength was higher than 255 MPa, and the elongation was above 82%. The microstructure was analyzed by optical microscopy （OM）, X-ray diffraction （XRD）, and transmission electron microscopy （TEM）. Before deformation the microstructure was composed of austenitic matrix and annealing twins at room temperature; at the same time, a significant amount of annealing twins and stacking faults were observed by TEM. Mechanical twins played a dominant role in deformation and as a result the mechanical properties were found to be excellent.

Effect of annealing temperature on microstructure and electrochemical performance of La_(0.75)Mg_(0.25)Ni_(3.5)Co_(0.2) hydrogen storage electrode alloy

To improve the cyclic stability of La-Mg-Ni system alloy, as-cast La0.75Mg0.25Ni3.5Co0.2 alloy was annealed at 1123, 1223, and 1323 K for 10 h in 0.3 MPa argon. The microstructure and electrochemical performance of different annealed alloys were investigated systematically by X-Ray Diffraction （XRD）, Scanning Electron Microscopy （SEM）, X-Ray Photoelectron Spectroscopy （XPS）, and electrochemical experiments. The results obtained by XRD and SEM showed that the as-cast and annealed （1123 K） alloys had multiphase structure containing LaNis, （La, Mg）2（Ni, Co）7 and few LaNi2 phases. When annealing temperatures approached 1223 and 1323 K, LaNi2 phase disappeared. The annealed alloys at 1223 and 1323 K were composed of LaNi5, （La, Mg）2（Ni, Co）7 and （La, Mg）（Ni, Co）3 phases. With increasing annealing temperature, the maximum discharge capacity of the alloy decreased monotonously, but the cyclic stability was improved owing to structure homogeneity and grain growth after annealing, as well as the enhancement of anti-oxidation/corrosion ability and the suppression of pulverization during cycling in KOH electrolyte.

Effects of substrate temperature and annealing treatment on the microstructure and magnetic characteristics of TbDyFe films

A series of TbDyFe films were prepared by DC magnetron sputtering. The effects of substrate temperature and annealing temperature on the phase structure and the magnetic properties of the sample films were investigated. The an-nealing treatment has a significant influence on the microstructure and the magnetic properties of the sample. The results obtained by XRD indicate that the films deposited at a temperature lower than 525℃ are amorphous and have an easy magnetization direction perpendicular to the film plane. An RFe2 phase is formed in the sample annealed at 550℃ and the residual phases observed are Fe and rare earth oxide. The magnetic properties Hc and Mr/Ms of the film annealed at 550℃ obtain the maximum values,for which the formation of the RFe2 phase is mainly responsible. An annealing treatment leads to a rotation of the sample’s easy axis from being parallel to the film surface to becoming vertical.

Annealing Temperature Effects of TiO2 Nanofiber Anodes for the Rechargeable Lithium Ion Batteries

TiO2 nanofibers（TiO2/NFs） have been synthesized through an electrospinning method and annealed at 400, 500 and 600 ℃ to optimize their systems. The effects of annealing temperature on the electrochemical properties for lithium ion batteries（LIBs） are assessed. The obtained LIB properties for TiO2 nanofiber anodes annealed at 400 ℃（denoted as TiO2/NFs-400） are much better than those of TiO2/NFs-500 and TiO2/NFs-600. The TiO2/NFs-400 anodes show good LIB performance with capacities of 180 and 150 m Ah/g tested at 200 and 600 m A/g after 100 cycles with almost no capacity loss and superb rate performance. The XRD results show that the pure anatase phase TiO2 can form at 400 ℃ for TiO2/NFs-400, while mixed phases of anatase and rutile are emerged at TiO2/NFs-500 and TiO2/NFs-600. Furthermore, the TiO2 nanoparticles are combined in nanofibers, and their corresponding crystal particle size for TiO2/NFs-400 was smaller than that of the other two samples. It is concluded that the superior electrochemical performance of the TiO2/NFs-400 anodes could be due to their pure crystal of anatase, small nanoparticles and non-ideal crystal lattices.

Annealing Temperature dependence of Photoluminescence from Silicon-rich silica Films

The silicon-rich silica films were prepared by a dual-ion-beam co-sputtering method from a composite Target in an argon atmosphere. The structure of the films studied by the aid of TEM and XRD is amorphous. The photoluminescence (PL) spectra were found to have a 4- luminescent band peak at 320 nm, 410 nm, 560 nm, and 630 nm, respectively, at room temperature. The intensity and the wavelength position of PL are dependent on annealing temperature (Ta), and the luminescent mechanism is analyzed.

Effect of Annealing Temperature on the Formation of Silicides and the Surface Morphologies of PtSi Films

The effect of annealing temperature on the formation of the PtSi phase. distribution of silicides and the surface morphologies of silicides films is investigated by XPS. AFM. It is shown that the phase sequences of the films change from Pt-Pt2Si-PtSi-Si to Pt+Pt2Si+PtSi-PtSi-Si or Pt+Pt2Si+PtSi-PtSi-st with an increase of annealing temperature and the reason for the formation of mixed layers is discussed.

Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H–SiC contacts

The Pt/Si/Ta/Ti multilayer metal contacts on 4H-Si C are annealed in Ar atmosphere at 600°C-1100°C by a rapid thermal processor（RTP）. The long-term thermal stability is evaluated by aging the annealed contact at 600°C in air. The contact＇s properties are determined by current-voltage measurement, and the specific contact resistance is calculated based on the transmission line model（TLM）. Transmission electron microscope（TEM） and energy-dispersive x-ray spectrometry（EDX） are used to characterize the interface morphology, thickness, and composition. The results reveal that a higher annealing temperature is favorable for the formation of an Ohmic contact with a lower specific contact resistance, and causes the rapid degradation of the Ohmic contact in the aging process.

Effects of Annealing Temperature on Microstructure and Sensing Properties to Alcohol for Nano-La_(0.68)Pb_(0.32)FeO_3

La_(0.68)Pb_(0.32)FeO_3 samples annealed at different temperature were prepared using citrate sol-gel method. With increasing of annealing temperature from 200 to 1000 ℃, the samples crystallize to have single-phase perovskite structure. However, the sensitivity increases at first due to the improvement of crystallization of the perovskite phase, and finally drops attributed to the larger grain size. The optimal sensitivities for La_(0.68)Pb_(0.32)FeO_3 samples annealed at 400, 600, 800, and 1000 ℃ are 12.14, 14.77, 51.07, and 34.55, respectively.

Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor

HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performance of the HfAlO/InAlAs MOS-capacitor, samples are annealed at different temperatures for investigating the HfAlO/InAlAs interfacial characyeristics and the device's electrical characteristics. We find that as annealing temperature increases from 280 ℃ to 480 ℃, the surface roughness on the oxide layer is improved. A maximum equivalent dielectric constant of 8.47, a minimum equivalent oxide thickness of 5.53 nm, and a small threshold voltage of -1.05 V are detected when being annealed at 380 ℃;furthermore, a low interfacial state density is yielded at 380 ℃, and this can effectively reduce the device leakage current density to a significantly low value of 1×10-7 A/cm2 at 3-V bias voltage. Therefore, we hold that 380 ℃ is the best compromised annealing temperature to ensure that the device performance is improved effectively. This study provides a reliable conceptual basis for preparing and applying HfAlO/InAlAs MOS-capacitor as the isolated gate on InAs/AlSb HEMT devices.

Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

In this study,indium oxide（In2O3） thin-film transistors（TFTs） are fabricated by two kinds of low temperature solution-processed technologies（Ta ≤ 300℃）,i.e.,water-based（DIW-based） process and alkoxide-based（2-ME-based）process.The thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures.Thermal annealing at higher temperature leads to an increase in the saturation mobility（μsat） and a negative shift in the threshold voltage（VTH）.The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance,and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm^2/V·s comparable to that of a-Si：H TFTs,whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm^2/Vs and one annealed at 200℃ is inactive.The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature.The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.

The influence of annealing temperature on the morphology of graphene islands

We report on temperature-programmed growth of graphene islands on Ru （0001） at annealing temperatures of 700 ℃, 800 ℃, and 900 ℃. The sizes of the islands each show a nonlinear increase with the annealing temperature. In 700 ℃ and 800 ℃annealings, the islands have nearly the same sizes and their ascending edges are embedded in the upper steps of the ruthenium substrate, which is in accordance with the etching growth mode. In 900 ℃ annealing, the islands are much larger and of lower quality, which represents the early stage of Smoluchowski ripening. A longer time annealing at 900 ℃ brings the islands to final equilibrium with an ordered moire pattern. Our work provides new details about graphene early growth stages that could facilitate the better control of such a growth to obtain graphene with ideal size and high quality.

Effects of Annealing Temperature on the Electrical Conductivity and Mechanical Property of Cu-Te Alloys

The effects of annealing temperatre on the electrical conducitivity and mechanical property of Cu-Te alloys were studied via an AG-10TA electronic universal machine, an SB2230 digital electric bridge, SEM, EDS and XPS. The results show the electrical conductivity increases while the tensile strength fluctuates when the annealing temperature becomes higher because the recrystallization occurs during the annealing process, leading to the density of dislocation decreasing, grain size growing up, but the second phase precipitating sufficiently and simultaneously.

Effect of Annealing Temperature on Magnetic Aftereffect and Positron Lifetime in Fe_(73.5)Cu_1Nb_3Si_(13.5)B_9 Alloy

The magnetic aftereffect (MAE) and the positron lifetime were measured at room temperature on the Fe_73.5Cu_1 Nb_3Si_13.5 B_9 alloy in as-cast and after annealing at temperature T_a in the range from 450 to 750℃ It was found that both the MAE and the positron lifetime decrease with increasing T_a when T_≤600℃. While Ta≥650℃, MAE is essentially suppressed, and two positron lifetimes appear.

Four-inch high quality crack-free AlN layer grown on a hightemperature annealed AlN template by MOCVD

In this work,based on physical vapor deposition and high-temperature annealing(HTA),the 4-inch crack-free high-quality AlN template is initialized.Benefiting from the crystal recrystallization during the HTA process,the FWHMs of X-ray rocking curves for(002)and(102)planes are encouragingly decreased to 62 and 282 arcsec,respectively.On such an AlN template,an ultra-thin AlN with a thickness of~700 nm grown by MOCVD shows good quality,thus avoiding the epitaxial lateral over-growth(ELOG)process in which 3-4μm AlN is essential to obtain the flat surface and high crystalline quality.The 4-inch scaled wafer provides an avenue to match UVC-LED with the fabrication process of traditional GaN-based blue LED,therefore significantly improving yields and decreasing cost.

Porosity Evaluation and the Power Spectral Densities Analyses of Carbon-Nickel Composite Films Annealed at Different Temperatures

The densification and the fractal dimensions of carbon-nickel films annealed at different temperatures 300, 500, 800, and 1000℃ with emphasis on porosity evaluation are investigated. For this purpose, the refractive index of films is determined from transmittance spectra. Three different regimes are identified, T 〈 500℃, 500℃ 〈 T 〈 800℃ and T 〉 800℃. The Rutherford baekscattering spectra show that with increasing the annealing temperature, the concentration of nickel atoms into films decreases. It is shown that the effect of annealing temperatures for increasing films densification at T 〈 500℃ and T 〉 800℃ is greater than the effect of nickel concentrations. It is observed that the effect of decreasing nickel atoms into films at 500℃ 〈 T 〈 800℃ strongly causes improving porosity and decreasing densification. The fractal dimensions of carbon-nickel films annealed from 300 to 500℃ are increased, while from 500 to 1000℃ these characteristics are decreased. It can be seen that at 800℃, films have maximum values of porosity and roughness.

Effect of continuous annealing temperature on the microstructure and mechanical property of an aluminum killed steel

The continuous annealing process of a typical aluminum killed steel was investigated. A cold rolled sheet was annealed continuously at holding temperature ranging from 580 to 760 ℃. The microstructures were analyzed in detail based on contiuous cooling transformation（ CCT） curves that were simulated with JM artP ro softw are. The results show ed that recrystallization and perlitic transformations caused a diversity of microstructures and mechanical properties. In comparison with annealed steel that was produced from insufficient recrystallization,annealed steel produced from sufficient recrystallization had more isometric grains and exhibited low er strength and higher ductility. Higher annealing temperatures than A_1 provided steel with lamellar pearlite zones,large ferrite grains,low strength,and high ductility. The results are attributed to the property optimization of the steel.

Influence of the Annealing Temperature on the Thickness and Roughness of La<SUB>2</SUB>Ti<SUB>2</SUB>O<SUB>7</SUB>Thin Films

In this work, the impact of the substrate annealing temperature on the thickness and roughness of La2Ti2O7 thin films was verified. A group of LTO Thin films was grown on Si (100) substrates successfully via pulsed laser deposition technique (PLD) at various annealing temperatures with a constant numbers of pulses and energy per pulse. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to investigate the thickness and roughness of the deposited La2Ti2O7 thin films. The average thickness of the thin films was decreased due to the increasing in the annealing temperature linearly;the maximum thickness was found (231 nm) when LTO thin film deposited at 500°C. The root mean square roughness was increased linearly with increasing the substrate Temperatures. The minimum roughness was found (0.254 nm) when LTO deposited at (500°C). From the obtained results, its clear evidence that the annealing temperature has an influence on the thickness and roughness of the LTO thin films.

Dielectric and energy storage properties of PbO–SrO–Nb_(2)O_(5)–Na_(2)O–Si thin films by annealing

Dielectric and energy storage properties of PbOSrO-Na_(2)O-Nb_(2)O_(5)-SiO_(2)(PSNNS) thin films with annealing temperature from 700 to 850 ℃ were investigated by measuring their capacitance-electric filed curve and hysteresis loops.The results show that the highest dielectric constant and energy density are 81.2 and 17.0 J·cm^(-3),respectively,which is obtained in the sample with annealing temperature of 800 ℃.Annealed from 700 to800 ℃,the dielectric constant and energy storage performance of PSNNS films are continuously improved.However,with annealing temperature up to 850 ℃,their dielectric constant decreases,which might be related with the removal of interfacial defects as a function of annealing temperature.Defect is one of the causes of space charge phenomenon,resulting in the increase in dielectric constant.Moreover,the micro structure analysis by X-ray diffraction(XRD) and transmission electron microscope(TEM) indicates that the change of crystallization phase and interfacial polarization takes responsibility to the results.

INFLUENCE OF COLD ROLLING REDUCTION ON MICROSTRUCTURE AND MECHANICAL PROPERTIES OF TWIP STEEL

The influence of cold rolling reduction on microstructure and mechanical properties of the TWIP （ttwinning induced plasticity） steel was investigated. The results＇ indicated that the steel had better comprehensive mechanical properties when cold rolling reduction was about 65.0% and the annealing temperature was 1000℃. The tensile strength of the steel is about 640MPa and the yield strength is higher than 255MPa, while the elongation is＇ above 82%. The microstructure is composed of austenitic matrix and annealing twins at room temperature, at the same time, a significant amount of annealing twins and stacking faults＇ are observed by transmission electron microscopy （TEM）. Mechanical twins play a dominant role during deformation, and result in exceUent mechanical properties.