Coexistence of antiferromagnetism and unconventional superconductivity in a quasi-one-dimensional flat-band system:Creutz lattice

We study the coexistence of antiferromagnetism and unconventional superconductivity on the Creutz lattice which shows strictly flat bands in the noninteracting regime.The famous renormalized mean-field theory is used to deal with strong electron-electron repulsive Hubbard interaction in the effective low-energy t-J model,the superfluid weight of the unconventional superconducting state has been calculated via the linear response theory.An unconventional superconducting state with both spin-singlet and staggered spin-triplet pairs emerges beyond a critical antiferromagnetic coupling interaction,while antiferromagnetism accompanies this state.The superconducting state with only spin-singlet pairs is dominant with paramagnetic phase.The A phase is analogous to the pseudogap phase,which shows that electrons go to form pairs but do not cause a supercurrent.We also show the superfluid behavior of the unconventional superconducting state and its critical temperature.It is proven directly that the flat band can effectively raise the critical temperature of superconductivity.It is implementable to simulate and control strongly-correlated electrons'behavior on the Creutz lattice in the ultracold atoms experiment or other artificial structures.Our results may help the understanding of the interplay between unconventional superconductivity and magnetism.

Coexistence of Superconductivity and Antiferromagnetism in SmAsO1-xFxFe

Superconductivity and magnetism have been interesting topics in condensed mater physics and they have been studied experimentally and theoretically for many years. These two cooperative phenomena are antagonistic until the discovery of some rare earth ternary compounds that show the coexistence of superconductivity and magnetism. In some of the recently discovered iron-based layered superconductors, superconductivity and magnetism coexist. In the present work we examine the possibility of coexistence of antiferromagnetism and superconductivity in samarium arsenide oxide superconductor (SmAsO1-xFxFe). Using a model of the Hamiltonian and retarded double time Greens function formalism, we found expressions AFM order Parameter (η) and AFM transition temperature (Tm). We obtained the phase diagrams (Tc vs η) and(Tm vs η) to obtain the region where orders, i.e., superconductivity and AFM (antiferromagnetism), coexisted. The region under the intersection of the two merged graphs shows that superconductivity and AFM coexist in the system (SmAsO1-xFxFe).

Incommensurate Antiferromagnetism in the Extended t-J Model

The effect of the extra second neighbor hopping t' on the incommensurate spin correlation in the t-J modelin the underdoped regime is studied within the fermion-spin theory. It is shown that although the extra second neighborhopping t' is systematically accompanied with the increasing of the weight of the incommensurate peaks in the dynamicalspin structure factor, for the physical reasonable small value of t' the qualitative behavior of the incommensurate spincorrelation in the t-t'-J model is the same as in the case of t-J model.

Incommensurate Antiferromagnetism in the Extended t－J Model

The effect of the extra second neighbor hopping t' on the incommensurate spin correlation in the t-J modelin the underdoped regime is studied within the fermion-spin theory. It is shown that although the extra second neighborhopping t' is systematically accompanied with the increasing of the weight of the incommensurate peaks in the dynamicalspin structure factor, for the physical reasonable small value of t' the qualitative behavior of the incommensurate spincorrelation in the t-t'-J model is the same as in the case of t-J model.

Antiferromagnetism and Kondo screening on a honeycomb lattice

Magnetic adatoms in the honeycomb lattice have received tremendous attention due to the interplay between Ruderman-Kittel-Kasuya-Yosida interaction and Kondo coupling leading to very rich physics. Here we study the competition between the antiferromagnetism and Kondo screening of local moments by the conduction electrons on the honeycomb lattice using the determinant quantum Monte Carlo method. While changing the interband hybridization V, we systemat- ically investigate the antiferromagnetic-order state and the Kondo singlet state transition, which is characterized by the behavior of the local moment, antiferromagnetic structure factor, and the short range spin-spin correlation. The evolution of the single particle spectrum are also calculated as a function of hybridization V, we find that the system presents a small gap in the antiferromagnetic-order region and a large gap in the Kondo singlet region in the Fermi level. We also find that the localized and itinerant electrons coupling leads to the midgap states in the conduction band in the Fermi level at very small V. Moreover, the formation of antiferromagnetic order and Kondo singlet are studied as on-site interaction U or temperature T increasing, we have derived the phase diagrams at on-site interaction U （or temperature T） and hybridization V plane.

Angular and planar transport properties of antiferromagnetic V_(5)S_(8)

Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared to that in ferromagnetic(FM)system.It can persist to the temperatures above AF transition and exhibit strong angular field dependence.The phase diagram reveals various magnetic states by rotating the applied field.By analyzing the anisotropic transport behavior,magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line.The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations.These behaviors are attributed to the scattering from spin–orbital coupling instead of nontrivial topological origin.Our results reveal anisotropic interactions of magnetism and electron in V5S8,suggesting potential opportunities for the AF spintronic sensor and devices.

Spin-orbit torque effect in silicon-based sputtered Mn_(3)Sn film

Noncollinear antiferromagnet Mn_(3)Sn has shown remarkable efficiency in charge-spin conversion,a novel magnetic spin Hall effect,and a stable topological antiferromagnetic state,which has resulted in great interest from researchers in the field of spin-orbit torque.Current research has primarily focused on the spin-orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn_(3)Sn films.However,this method is not suitable for large-scale industrial preparation.In this study,amorphous Mn_(3)Sn films and Mn_(3)Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates.The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin-orbit torque effect generated by in-plane polarized spin currents existed in the Mn_(3)Sn/Py heterostructure,with a spin-orbit torque efficiency of 0.016.Additionally,we prepared the perpendicular magnetized Mn_(3)Sn/CoTb heterostructure based on amorphous Mn_(3)Sn film,where the spin-orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density(3.9×10^(7)A/cm^(2))compared to Ta/CoTb heterostructure.This research reveals the spin-orbit torque effect of amorphous Mn_(3)Sn films and establishes a foundation for further advancement in the practical application of Mn_(3)Sn materials in spintronic devices.

Effects of the Next Nearest Neighbor Hopping on Superconductivity and Antiferromagnetism of Gossamer Superconductivity

The two dimensions hole-doped t-t '-J-U model was studied based on the Gutzwiller approach and the renormalized mean-field theory.The phase diagrams of gossamer superconductors and the effects of the next-nearestneighbor hopping(t ') on superconductivity and antiferromagnetism based on the t-t '-J-U model were investigated.The results show that the qualitative feature of the phase diagrams in the t-t '-J-U model is the same as in the case of the t-J-U model.The antiferromagnetic order coexists with the d-wave superconductivity(dSC) in the underdoped region below the doping δ≈ 0.1 and is enhanced by the t '.The dSC order is slightly suppressed by t ' in the underdoped region and greatly enhanced in the overdoped region.The dSC order is pushed to a larger doping region and the coexistence region of the AF and dSC extends to higher doping.

Pressure-induced magnetic phase and structural transition in SmSb_(2)

Motivated by the recent discovery of unconventional superconductivity around a magnetic quantum critical point in pressurized CeSb_(2),here we present a high-pressure study of an isostructural antiferromagnetic(AFM) SmSb_(2) through electrical transport and synchrotron x-ray diffraction measurements.At P_(C)~2.5 GPa,we found a pressure-induced magnetic phase transition accompanied by a Cmca→P4/nmm structural phase transition.In the pristine AFM phase below P_(C),the AFM transition temperature of SmSb_(2) is insensitive to pressure;in the emergent magnetic phase above P_(C),however,the magnetic critical temperature increases rapidly with increasing pressure.In addition,at ambient pressure,the magnetoresistivity(MR) of SmSb_(2) increases suddenly upon cooling below the AFM transition temperature and presents linear nonsaturating behavior under high field at 2 K.With increasing pressure above P_(C),the MR behavior remains similar to that observed at ambient pressure,both in terms of temperature-and field-dependent MR.This leads us to argue an AFM-like state for SmSb_(2) above P_(C).Within the investigated pressure of up to 45.3 GPa and the temperature of down to 1.8 K,we found no signature of superconductivity in SmSb_(2).

Negative magnetoresistance in the antiferromagnetic semimetal V_(1/3)TaS_(2)

Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor transport method.We measured the magnetization,longitudinal resistivityρxx(T,H),Hall resistivityρxy(T,H),as well as performed calculations of the electronic band structure.It was found that V_(1/3)TaS_(2) is an A-type antiferromagnet with the Neel temperature T_(N)=6.20 K,and exhibits a negative magnetoresistance(MR)near T_(N).Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.

Spin gap in quasi-one-dimensional S=3/2 antiferromagnet CoTi2O5

Quasi-one-dimensional(1D)antiferromagnets are known to display intriguing phenomena especially when there is a spin gap in their spin-excitation spectra.Here we demonstrate that a spin gap exists in the quasi-1D Heisenberg antiferromagnet CoTi2O5 with highly ordered Co2+/Ti4+occupation,in which the Co2+ions with S=3/2 form a 1D spin chain along the a-axis.CoTi2O5 undergoes an antiferromagnetic transition at TN~24 K and exhibits obvious anisotropic magnetic susceptibility even in the paramagnetic region.Although a gapless magnetic ground state is usually expected in a quasi-1D Heisenberg antiferromagnet with half-integer spins,by analyzing the specific heat,the thermal conductivity,and the spin-lattice relaxation rate(1/T1)as a function of temperature,we found that a spin gap is opened in the spin-excitation spectrum of CoTi2O5 around TN,manifested by the rapid decrease of magnetic specific heat to zero,the double-peak characteristic in thermal conductivity,and the exponential decay of 1/T1 below TN.Both the magnetic measurements and the first-principles calculations results indicate that there is spin-orbit coupling in CoTi2O5,which induces the magnetic anisotropy in CoTi2O5,and then opens the spin gap at low temperature.

In-phase and out-of-phase spin pumping effects in Py/Ru/Pysynthetic antiferromagnetic structures

The spin pumping effect in magnetic heterostructures and multilayers is a highly effective method for the generationand transmission of spin currents. In the increasingly prominent synthetic antiferromagnetic structures, the two ferromagneticlayers demonstrate in-phase and out-of-phase states, corresponding to acoustic and optical precession modes. Withinthis context, our study explores the spin pumping effect in Py/Ru/Py synthetic antiferromagnetic structures across differentmodes. The heightened magnetic damping resulting from the spin pumping effect in the in-phase state initially decreaseswith increasing Py thickness before stabilizing. Conversely, in the out-of-phase state, the amplified damping exceeds thatof the in-phase state, suggesting a greater spin relaxation within this configuration, which demonstrates sensitivity to alterationsin static exchange interactions. These findings contribute to advancing the application of synthetic antiferromagneticstructures in magnonic devices.

Influence of exchange bias on spin torque ferromagnetic resonance for quantification of spin–orbit torque efficiency

Antiferromagnet(AFM)/ferromagnet(FM)heterostructure is a popular system for studying the spin–orbit torque(SOT)of AFMs.However,the interfacial exchange bias field induces that the magnetization in FM layer is noncollinear to the external magnetic field,namely the magnetic moment drag effect,which further influences the characteristic of SOT efficiency.In this work,we study the SOT efficiencies of IrMn/NiFe bilayers with strong interfacial exchange bias by using spin-torque ferromagnetic resonance(ST-FMR)method.A full analysis on the AFM/FM systems with exchange bias is performed,and the angular dependence of magnetization on external magnetic field is determined through the minimum rule of free energy.The ST-FMR results can be well fitted by this model.We obtained the relative accurate SOT efficiencyξ_(DL)=0.058 for the IrMn film.This work provides a useful method to analyze the angular dependence of ST-FMR results and facilitates the accurate measurement of SOT efficiency for the AFM/FM heterostructures with strong exchange bias.

Magnetism, heat capacity, magnetocaloric effect, and magneto-transport properties of heavy fermion antiferromagnet CeGaSi

We synthesize high-quality single crystal of CeGaSi by a Ga self-flux method and investigate its physical properties through magnetic susceptibility,specific heat and electrical resistivity measurements as well as high pressure effect.Magnetic measurements reveal that an antiferromagnetic order develops below T_(m)~10.4 K with magnetic moments orientated in the ab plane.The enhanced electronic specific heat coefficient and the negative logarithmic slope in the resistivity of CeGaSi indicate that the title compound belongs to the family of Kondo system with heavy fermion ground states.The max magnetic entropy change-ΔS_(M)^(max)(μ_(0)H⊥c,μ_(0)H=7 T) around T_(m) is found to reach up to 11.85 J·kg^(-1)·K^(-1).Remarkably,both the antiferromagnetic transition temperature and-ln T behavior increase monotonically with pressure applied to 20 kbar(1 bar=10~5 Pa),indicating that much higher pressure will be needed to reach its quantum critical point.

Low-energy spin dynamics in a Kitaev material Na_(3)Ni_(2)BiO_(6) investigated by nuclear magnetic resonance

We perform ^(23)Na nuclear magnetic resonance(NMR) and magnetization measurements on an S=1,quasi-2D honeycomb lattice antiferromagnet Na_(3)Ni_(2)BiO_(6).A large positive Curie-Weiss constant of 22.9 K is observed.The NMR spectra at low fields are consistent with a zigzag magnetic order,indicating a large easy-axis anisotropy.With the field applied along the c*axis,the NMR spectra confirm the existence of a 1/3-magnetization plateau phase between 5.1 T and 7.1 T.The transition from the zigzag order to the 1/3-magnetization plateau phase is also found to be a first-order type.A monotonic decrease of the spin gap is revealed in the 1/3-magnetization plateau phase,which reaches zero at a quantum critical field H_(C)≈8.35 T before entering the fully polarized phase.These data suggest the existence of exchange frustration in the system along with strong ferromagnetic interactions,hosting the possibility for Kitaev physics.Besides,well below the ordered phase,the 1/T_(1) at high fields shows either a level off or an enhancement upon cooling below 3 K,which suggests the existence of low-energy fluctuations.

Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers

A clear microscopic understanding of exchange bias is crucial for its application in magnetic recording, and further progress in this area is desired. Based on the results of our first-principles calculations and Monte Carlo simulations,we present a theoretical proposal for a stacking-dependent exchange bias in two-dimensional compensated van der Waals ferromagnetic/antiferromagnetic bilayer heterostructures. The exchange bias effect emerges in stacking registries that accommodate inhomogeneous interlayer magnetic interactions between the ferromagnetic layer and different spin sublattices of the antiferromagnetic layer. Moreover, the on/off switching and polarity reversal of the exchange bias can be achieved by interlayer sliding, and the strength can be modulated using an external electric field. Our findings push the limits of exchange bias systems to extreme bilayer thickness in two-dimensional van der Waals heterostructures, potentially stimulating new experimental investigations and applications.

Suppressed Antiferromagnetism and Superconductivity in As-deficient Iron-based Superconductor of SrFe_(1.8)Co_(0.2)As_x

Iron-based superconductors namely Sr(Fe1.8Co0.2)As1.8 (FeAs1.8) and Sr(Fe1.8Co0.2)As1.85 (FeAs1.85) with As deficiency are prepared by solid-state reaction. X-ray diffraction reveals that the polycrystalline phase forms in the studied samples, identical to typical SrFe2As2 (122) matrix. Resistive and magnetic measurements show that the superconducting transition temperatures (Tc) are about 19 K for both FeAs1.8 and FeAs1.85. Compared with the performances of typical iron-based 122 superconductors arising from Co doping, the present samples show the suppressed superconductivity. Moreover, the antiferromagnetic (AFM) phase correlated with spin-density-wave (SDW) is reduced as well. The AFM transition temperature decreases to 122 K for FeAs1.85, while such a phase transition is absent at all for FeAs1.8, one sample with less As, implying that the existence of SDW and antiferromagnetism is more sensitive to As content.

Structural phase transition, antiferromagnetism and two superconducting domes in LaFeAsO_(1-x)F_x(0

We report^(75) As nuclear magnetic resonance(NMR)/nuclear quadrupole resonance(NQR) and transmission electron microscopy(TEM) studies on LaFeAsO_(1-x)F_x. There are two superconducting domes in this material. The first one appears at 0.03 ≤ x ≤0.2 with T_c^(max) = 27 K, and the second one at 0.25 ≤x≤0.75 with T_c^(max) = 30 K. By NMR and TEM, we demonstrate that a C4-to-C2 structural phase transition(SPT) takes place above both domes, with the transition temperature T_s varying strongly with x. In the first dome, the SPT is followed by an antiferromagnetic(AF) transition, but neither AF order nor low-energy spin fluctuations are found in the second dome. By ^(75) As nuclear spin-lattice relaxation rate(1/T_1) measurements, we find that AF order and superconductivity coexist microscopically in LaFeAsO_(0.97) F_(0.03). In the coexisting region, 1/T_1 decreases at T_c but becomes proportional to T below 0.6 T_c, indicating gapless excitations. Therefore, in contrast to the early reports, the obtained phase diagram for x ≤ 0.2 is quite similar to the doped BaFe_2As_2 system. The electrical resistivity p in the second dome can be fitted by ρ = ρ0 + AT^n with n = 1 and a maximal coefficient A at around xopt = 0.5-0.55 at which T_s extrapolates to zero and Tc is the maximal, which suggests the importance of quantum critical fluctuations associated with the SPT. We have constructed a complete phase diagram of LaFeAsO_(1-x)F_x, which provides insight into the relationship between SPT, antiferromagnetism and superconductivity.

A spin-based magnetic scanning microscope for in-situ strain tuning of soft matter

We present a magnetic scanning microscope equipped with a nitrogen-vacancy(NV) center scanning probe that has the ability to mechanically tune the strain of soft matter in-situ. The construction of the microscope and a continuous straintuning sample holder are discussed. An optically detected magnetic resonance protocol utilized in the imaging is described.In order to show the reliability of this microscope, the strain conduction is estimated with finite element simulation, and xray diffraction is required for calibration when freestanding crystal films are under consideration. A magnetic imaging result is displayed to demonstrate the nano-scale imaging capability. The microscope presented in this work is helpful in studying strain-coupled magnetic physics such as magnetic phase transition under strain and strain-tuned cycloidal orientation tilting.

Ultrafast antiferromagnet rearrangement in Co/IrMn/CoGd trilayers

Antiferromagnets offer great potential for high-speed data processing applications,as they can expend spintronic devices from a static storage and gigahertz frequency range to the terahertz range.However,their zero net magnetization makes them difficult to manipulate and detect.In recent years,there has been a lot of attention given to the ultrafast manipulation of magnetic order using ultra-short single laser pulses,but it remains unknown whether a similar scenario can be observed in antiferromagnets.In this work,we demonstrate the manipulation of antiferromagnets with a single femtosecond laser pulse in perpendicular exchange-biased Co/Ir Mn/Co Gd trilayers.We study the dual exchange bias interlayer interaction in quasi-static conditions and competition in ultrafast antiferromagnet rearrangement.Our results show that,compared to conventional ferromagnetic/antiferromagnetic systems,the Ir Mn antiferromagnet can be ultrafast and efficiently manipulated by the coupled Co Gd ferrimagnetic layer,which paves the way for potential energy-efficient spintronic devices.