A multi-bit antifuse-type one-time programmable （OTP） memory is designed, which has a smaller area and a shorter programming time compared with the conventional single-bit antifuse-type OTP memory. While the convent...A multi-bit antifuse-type one-time programmable （OTP） memory is designed, which has a smaller area and a shorter programming time compared with the conventional single-bit antifuse-type OTP memory. While the conventional antifuse-type OTP memory can store a bit per cell, a proposed OTP memory can store two consecutive bits per cell through a data compression technique. The 1 kbit OTP memory designed with Magnachip 0.18 μm CMOS （complementary metal-oxide semiconductor） process is 34% smaller than the conventional single-bit antifuse-type OTP memory since the sizes of cell array and row decoder are reduced. And the programming time of the proposed OTP memory is nearly 50% smaller than that of the conventional counterpart since two consecutive bytes can be compressed and programmed into eight OTP cells at once. The layout area is 214 μm× 327 μ,, and the read current is simulated to be 30.4 μA.展开更多
A 1 kbit antifuse one time programmable(OTP) memory IP,which is one of the non-volatile memory IPs,was designed and used for power management integrated circuits(ICs).A conventional antifuse OTP cell using a single po...A 1 kbit antifuse one time programmable(OTP) memory IP,which is one of the non-volatile memory IPs,was designed and used for power management integrated circuits(ICs).A conventional antifuse OTP cell using a single positive program voltage(VPP) has a problem when applying a higher voltage than the breakdown voltage of the thin gate oxides and at the same time,securing the reliability of medium voltage(VM) devices that are thick gate transistors.A new antifuse OTP cell using a dual program voltage was proposed to prevent the possibility for failures in a qualification test or the yield drop.For the newly proposed cell,a stable sensing is secured from the post-program resistances of several ten thousand ohms or below due to the voltage higher than the hard breakdown voltage applied to the terminals of the antifuse.The layout size of the designed 1 kbit antifuse OTP memory IP with Dongbu HiTek's 0.18 μm Bipolar-CMOS-DMOS(BCD) process is 567.9 μm×205.135 μm and the post-program resistance of an antifuse is predicted to be several ten thousand ohms.展开更多
This paper＂ describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the A1-HfO2-AI antifuse. The programming voltage of the a...This paper＂ describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the A1-HfO2-AI antifuse. The programming voltage of the antiiikse with 120 A HfO2 is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance （-19Ω） and low programming voltage （4.6 V） is demonstrated in the embedded Ti antifhse with 120 A H fO2 while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.展开更多
基金Project supported by the 2nd Stage of Brain KoreaProject supported by the Korea Research Foundation
文摘A multi-bit antifuse-type one-time programmable （OTP） memory is designed, which has a smaller area and a shorter programming time compared with the conventional single-bit antifuse-type OTP memory. While the conventional antifuse-type OTP memory can store a bit per cell, a proposed OTP memory can store two consecutive bits per cell through a data compression technique. The 1 kbit OTP memory designed with Magnachip 0.18 μm CMOS （complementary metal-oxide semiconductor） process is 34% smaller than the conventional single-bit antifuse-type OTP memory since the sizes of cell array and row decoder are reduced. And the programming time of the proposed OTP memory is nearly 50% smaller than that of the conventional counterpart since two consecutive bytes can be compressed and programmed into eight OTP cells at once. The layout area is 214 μm× 327 μ,, and the read current is simulated to be 30.4 μA.
基金Work supported by the Second Stage of Brain Korea 21 Projectssupported by Changwon National University in 2009-2010
文摘A 1 kbit antifuse one time programmable(OTP) memory IP,which is one of the non-volatile memory IPs,was designed and used for power management integrated circuits(ICs).A conventional antifuse OTP cell using a single positive program voltage(VPP) has a problem when applying a higher voltage than the breakdown voltage of the thin gate oxides and at the same time,securing the reliability of medium voltage(VM) devices that are thick gate transistors.A new antifuse OTP cell using a dual program voltage was proposed to prevent the possibility for failures in a qualification test or the yield drop.For the newly proposed cell,a stable sensing is secured from the post-program resistances of several ten thousand ohms or below due to the voltage higher than the hard breakdown voltage applied to the terminals of the antifuse.The layout size of the designed 1 kbit antifuse OTP memory IP with Dongbu HiTek's 0.18 μm Bipolar-CMOS-DMOS(BCD) process is 567.9 μm×205.135 μm and the post-program resistance of an antifuse is predicted to be several ten thousand ohms.
文摘This paper＂ describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the A1-HfO2-AI antifuse. The programming voltage of the antiiikse with 120 A HfO2 is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance （-19Ω） and low programming voltage （4.6 V） is demonstrated in the embedded Ti antifhse with 120 A H fO2 while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.
