A screen for Arabidopsis fertility mutants, mutagenized by low-energy argon ion beam, yielded two partial male-sterile mutants tc243-1 and tc243-2 which have similar phenotypes. tc243-2 was investigated in detail. The...A screen for Arabidopsis fertility mutants, mutagenized by low-energy argon ion beam, yielded two partial male-sterile mutants tc243-1 and tc243-2 which have similar phenotypes. tc243-2 was investigated in detail. The segregation ratio of the mutant phenotypes in the M2 pools suggested that mutation behaved as single Mendelian recessive mutations, tc243 showed a series of mutant phenotypes, among which partial male-sterile was its striking mutant characteristic. Phenotype analysis indicates that there are four factors leading to male sterility, a. Floral organs normally develop inside the closed bud, but the anther filaments do not elongate sufficiently to position the locules above the stigma at anthesis, b. The anther locules do not dehisce at the time of flower opening （although limited dehiscence occurs later）, c. Pollens of mutant plants develop into several types of pollens at the trinucleated stage. as determined by staining with DAPI （4＇,6-diamidino-2-phenylindole）. which shows a variable size. shape and number of nucleus. d. The viability of pollens is lower than that of the wild type on the germination test in vivo and vitro.展开更多
High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser me...High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.展开更多
An increased of H ion beam current whenever argon gas is added has been observed. The physics behind argon effect is that in the production of more H atoms, a part of H atoms will be converted to H2*(v>4) to increa...An increased of H ion beam current whenever argon gas is added has been observed. The physics behind argon effect is that in the production of more H atoms, a part of H atoms will be converted to H2*(v>4) to increase H- density. Increase of nH depends on the rate of added Ar η %, primary filling pressure P, electron density neAr and recombination coefficient 7 of H atom. Adding 25% Ar is optimal, although there have been assumed various parameters. Increase of nH depends on decreased recombination coefficient 7, and increased primary filling pressure P. The increase of nH is small when the pressure P < 0.3 Pa. Optimized volume size L/R^2 is optimal for obtaining a maximum Ar effect.展开更多
基金Key Innovative Project of Chinese Academy of Sciences(No.KSCX2-SW-324)Director's Foundation of the Institute of Plasma Physics(No.152900500301)
文摘A screen for Arabidopsis fertility mutants, mutagenized by low-energy argon ion beam, yielded two partial male-sterile mutants tc243-1 and tc243-2 which have similar phenotypes. tc243-2 was investigated in detail. The segregation ratio of the mutant phenotypes in the M2 pools suggested that mutation behaved as single Mendelian recessive mutations, tc243 showed a series of mutant phenotypes, among which partial male-sterile was its striking mutant characteristic. Phenotype analysis indicates that there are four factors leading to male sterility, a. Floral organs normally develop inside the closed bud, but the anther filaments do not elongate sufficiently to position the locules above the stigma at anthesis, b. The anther locules do not dehisce at the time of flower opening （although limited dehiscence occurs later）, c. Pollens of mutant plants develop into several types of pollens at the trinucleated stage. as determined by staining with DAPI （4＇,6-diamidino-2-phenylindole）. which shows a variable size. shape and number of nucleus. d. The viability of pollens is lower than that of the wild type on the germination test in vivo and vitro.
文摘High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.
文摘An increased of H ion beam current whenever argon gas is added has been observed. The physics behind argon effect is that in the production of more H atoms, a part of H atoms will be converted to H2*(v>4) to increase H- density. Increase of nH depends on the rate of added Ar η %, primary filling pressure P, electron density neAr and recombination coefficient 7 of H atom. Adding 25% Ar is optimal, although there have been assumed various parameters. Increase of nH depends on decreased recombination coefficient 7, and increased primary filling pressure P. The increase of nH is small when the pressure P < 0.3 Pa. Optimized volume size L/R^2 is optimal for obtaining a maximum Ar effect.
