It has been observed that H^- current could be improved by adding Ar to H2 plasma. But due to a slower pumping speed for Ar with the existing pumping scheme, the tank pressure will increase quickly during the length o...It has been observed that H^- current could be improved by adding Ar to H2 plasma. But due to a slower pumping speed for Ar with the existing pumping scheme, the tank pressure will increase quickly during the length of a beam pulse. Since H^- stripping loss depends on the tank pressure and gas species, part of the H^- beam can be converted to H^0 and then H^0 can be converted into H^＋ with background H2 and Ar gas thickness. Therefore, the H^- beam current, measured by a Faraday cup, situated at a distance L from GG （ground grid）, will decrease because it will be converted into a H^＋ current. This gives a ratio of the Faraday cup net current to the H^- beam current before stripping at background partial pressure of Ar.展开更多
The dry etching characteristic of AlSbTe film was investigated by using a CF/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF/Ar ratio,the Oaddition,the chamber background pres...The dry etching characteristic of AlSbTe film was investigated by using a CF/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of AlSbTe thin films was investigated as a function of the CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CFconcentration of 4%,power of 300 W and pressure of 80 mTorr.展开更多
文摘It has been observed that H^- current could be improved by adding Ar to H2 plasma. But due to a slower pumping speed for Ar with the existing pumping scheme, the tank pressure will increase quickly during the length of a beam pulse. Since H^- stripping loss depends on the tank pressure and gas species, part of the H^- beam can be converted to H^0 and then H^0 can be converted into H^＋ with background H2 and Ar gas thickness. Therefore, the H^- beam current, measured by a Faraday cup, situated at a distance L from GG （ground grid）, will decrease because it will be converted into a H^＋ current. This gives a ratio of the Faraday cup net current to the H^- beam current before stripping at background partial pressure of Ar.
基金supported by National Key Basic Research Program of China(Nos.2010CB934300,2011CBA00607,2011CB932800)the National Integrated Circuit Research Program of China(No.2009ZX02023-003)+1 种基金the National Natural Science Foundation of China(Nos.60906004, 60906003,61006087,61076121)the Science and Technology Council of Shanghai,China(No.1052nm07000)
文摘The dry etching characteristic of AlSbTe film was investigated by using a CF/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of AlSbTe thin films was investigated as a function of the CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CFconcentration of 4%,power of 300 W and pressure of 80 mTorr.
