A combined PIXE-RBS channeling measurement system to examine Ⅲ-Ⅴ compound semiconductors has been established. Preliminary results on studying Si+ and Te+ implanted GaAs have been presented and discussed.
The residual electrically active defects in(4×10<sup>12</sup>cm<sup>-2</sup>（30KeV）+5×10<sup>12</sup>cm<sup>-2</sup>（130KeV）)si-implanted LEC undoped si-Ga...The residual electrically active defects in(4×10<sup>12</sup>cm<sup>-2</sup>（30KeV）+5×10<sup>12</sup>cm<sup>-2</sup>（130KeV）)si-implanted LEC undoped si-GaAs activated by two-step rapid thermal annealing（RTA）LABELED AS 970℃（9S）+750℃（12S）have been investigated with deep level transient spec-troscopy（DLTS）.Two electron traps ET<sub>1</sub>(E<sub>c</sub>-0.53eV,σ<sub>n</sub>=2.3×10<sup>-16</sup>cm<sup>2</sup>)and ET<sub>2</sub>（E<sub>c</sub>-0.81eV,σ<sub>n</sub>=9.7×10（-13）cm<sup>2</sup>）are detected.Furthermore,the noticeable variations of trap’s con-centration and energy level in the forbidden gap with the depth profile of defects induced by ion im-plantation and RTA process have also been observed.The[As<sub>i</sub>·V<sub>As</sub>·As<sub>Ga</sub>]and[V<sub>As</sub>·As<sub>i</sub>·V<sub>Ga</sub>·As<sub>Ga</sub>]are proposed to be the possible atomic configurations of ET<sub>1</sub> and ET<sub>2</sub>,respectively to explaintheir RTA behaviors.展开更多
报道了用离子注入方法和组合技术制备的 Al Ga As/Ga As单量子阱多波长发光集成芯片 ,利用量子阱界面混合原理在同一块 Ga As衬底片上获得了 2 0多个发光波长从 787～ 72 4nm的 Ga As量子阱发光单元 ,研究了不同剂量的 As和 H离子分别...报道了用离子注入方法和组合技术制备的 Al Ga As/Ga As单量子阱多波长发光集成芯片 ,利用量子阱界面混合原理在同一块 Ga As衬底片上获得了 2 0多个发光波长从 787～ 72 4nm的 Ga As量子阱发光单元 ,研究了不同剂量的 As和 H离子分别单独注入和迭加组合注入对量子阱发光峰位的影响 ,采用了组合技术和离子注入技术大大简化了制备工艺过程 ,这种发光芯片对于波分复用器件和建立离子注入数据库等方面都有重要的意义 .展开更多
文摘A combined PIXE-RBS channeling measurement system to examine Ⅲ-Ⅴ compound semiconductors has been established. Preliminary results on studying Si+ and Te+ implanted GaAs have been presented and discussed.
文摘The residual electrically active defects in(4×10<sup>12</sup>cm<sup>-2</sup>（30KeV）+5×10<sup>12</sup>cm<sup>-2</sup>（130KeV）)si-implanted LEC undoped si-GaAs activated by two-step rapid thermal annealing（RTA）LABELED AS 970℃（9S）+750℃（12S）have been investigated with deep level transient spec-troscopy（DLTS）.Two electron traps ET<sub>1</sub>(E<sub>c</sub>-0.53eV,σ<sub>n</sub>=2.3×10<sup>-16</sup>cm<sup>2</sup>)and ET<sub>2</sub>（E<sub>c</sub>-0.81eV,σ<sub>n</sub>=9.7×10（-13）cm<sup>2</sup>）are detected.Furthermore,the noticeable variations of trap’s con-centration and energy level in the forbidden gap with the depth profile of defects induced by ion im-plantation and RTA process have also been observed.The[As<sub>i</sub>·V<sub>As</sub>·As<sub>Ga</sub>]and[V<sub>As</sub>·As<sub>i</sub>·V<sub>Ga</sub>·As<sub>Ga</sub>]are proposed to be the possible atomic configurations of ET<sub>1</sub> and ET<sub>2</sub>,respectively to explaintheir RTA behaviors.
