The Ga N based blue light emitting diodes(LEDs) with a thin Al In N layer inserted in front of the electron blocking layer(EBL) are experimentally studied.It is found that inserting a thin EBL can improve the light ou...The Ga N based blue light emitting diodes(LEDs) with a thin Al In N layer inserted in front of the electron blocking layer(EBL) are experimentally studied.It is found that inserting a thin EBL can improve the light output power and reduce the efficiency droop compared with the conventional Al Ga N counterparts.Based on numerical simulation and analysis,the improvement on the electrical and optical characteristics is mainly attributed to the reduction of the electron leakage current,which increases the concentration of carriers in the quantum well(QW) when the thin Al In N layer is used.展开更多
The properties of Al-doped Zn O(AZO) play an important role in the photovoltaic performance of inverted polymer solar cells(PSCs), which is used as electron transport and hole blocking buffer layers. In this work, we ...The properties of Al-doped Zn O(AZO) play an important role in the photovoltaic performance of inverted polymer solar cells(PSCs), which is used as electron transport and hole blocking buffer layers. In this work, we study the effects of Al-doping level in AZO on device performance in detail. Results indicate that the device performance intensely depends on the Al-doping level. The AZO thin films with Al-doping atomic percentage of 1.0% possess the best conductivity. The resulting solar cells show the enhanced short current density and the fill factor(FF) simultaneously, and the power conversion efficiency(PCE) is improved by 74%, which are attributed to the reduced carrier recombination and the optimized charge transport and extraction between AZO and the active layer.展开更多
基金supported by the Key Scientific Research Project of Higher Education of Henan Province(No.15A510033)
文摘The Ga N based blue light emitting diodes(LEDs) with a thin Al In N layer inserted in front of the electron blocking layer(EBL) are experimentally studied.It is found that inserting a thin EBL can improve the light output power and reduce the efficiency droop compared with the conventional Al Ga N counterparts.Based on numerical simulation and analysis,the improvement on the electrical and optical characteristics is mainly attributed to the reduction of the electron leakage current,which increases the concentration of carriers in the quantum well(QW) when the thin Al In N layer is used.
基金supported by the National Natural Science Foundation of China(No.61377031)the Scientific Research Foundation of Zhejiang Ocean University(No.Q1444)
文摘The properties of Al-doped Zn O(AZO) play an important role in the photovoltaic performance of inverted polymer solar cells(PSCs), which is used as electron transport and hole blocking buffer layers. In this work, we study the effects of Al-doping level in AZO on device performance in detail. Results indicate that the device performance intensely depends on the Al-doping level. The AZO thin films with Al-doping atomic percentage of 1.0% possess the best conductivity. The resulting solar cells show the enhanced short current density and the fill factor(FF) simultaneously, and the power conversion efficiency(PCE) is improved by 74%, which are attributed to the reduced carrier recombination and the optimized charge transport and extraction between AZO and the active layer.
