Nowadays,OLEDs have shown aesthetic potential in smart cards,sensor displays,other electronic devices,sensitive medical devices and signal monitoring etc.due to their wide range of applications like low power consumpt...Nowadays,OLEDs have shown aesthetic potential in smart cards,sensor displays,other electronic devices,sensitive medical devices and signal monitoring etc.due to their wide range of applications like low power consumption,high contrast ratio,speed highly electroluminescent,wide viewing angle and fast response time.In this paper,a highly efficient organic LED ITO/V_(2)O_(5)/Alq3/TPBi/BPhen/LiF/Al with low turn-on voltage and high optically efficiency is presented including electrical and optical characteristics.The simulation of electrical characteristics like current versus applied voltage,current density versus applied voltage,recombination prefactor versus excess carrier density characteristics and optical characteristics like light flux versus current density,light flux versus applied voltage and optical efficiency versus applied voltage has been explained.The physical design,working principle and thickness of different layers along with the process of formation of singlet and triplet excitons are discussed in detail.Here double electron transport layer(ETL),cathode layers are used to enhance the electrical and optical efficiency of OLED.The operating voltage is found to be~3.2 V for the ITO/V_(2)O_(5)/Alq3/TPBi/BPhen/LiF/Al heterostructure based OLED.The designed organic LED has achieved the maximum optical efficiency at 3 V.展开更多
C60 field-effect transistor (OFET) with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophe...C60 field-effect transistor (OFET) with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen)/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently.展开更多
文摘Nowadays,OLEDs have shown aesthetic potential in smart cards,sensor displays,other electronic devices,sensitive medical devices and signal monitoring etc.due to their wide range of applications like low power consumption,high contrast ratio,speed highly electroluminescent,wide viewing angle and fast response time.In this paper,a highly efficient organic LED ITO/V_(2)O_(5)/Alq3/TPBi/BPhen/LiF/Al with low turn-on voltage and high optically efficiency is presented including electrical and optical characteristics.The simulation of electrical characteristics like current versus applied voltage,current density versus applied voltage,recombination prefactor versus excess carrier density characteristics and optical characteristics like light flux versus current density,light flux versus applied voltage and optical efficiency versus applied voltage has been explained.The physical design,working principle and thickness of different layers along with the process of formation of singlet and triplet excitons are discussed in detail.Here double electron transport layer(ETL),cathode layers are used to enhance the electrical and optical efficiency of OLED.The operating voltage is found to be~3.2 V for the ITO/V_(2)O_(5)/Alq3/TPBi/BPhen/LiF/Al heterostructure based OLED.The designed organic LED has achieved the maximum optical efficiency at 3 V.
基金supported by the National Science Foundation for Post-Doctoral Scientists of China (Grant No.20100471667)the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) (Grant No.2011jjA40020)+1 种基金the National Natural Science Foundation of China (Grant Nos.60736005 and 61021061)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China (Grant No.GGRYJJ08-05)
文摘C60 field-effect transistor (OFET) with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen)/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently.